Ta-Shun received his bachelor degree in materials science and chemistry at National Tsing Hua University in Taiwan. After his master studies at University Erlangen-Nuremberg, he joined Cynora GmbH as a Senior Process Engineer.

During his Ph.D. project, he aims to develop a MOVPE process of homoepitaxially grown ß-Ga₂O₃ for the industrial applications. He had implemented machine learning technique to accelerate the process development and had developed specific algorithm combining reflectance spectroscopy to in-situ monitor the growth process.

If you are interested in his research, please visit his research gate website or contact him on LinkedIn.

Section: Thin Oxide Films / Junior Research Group "Epitaxy of semiconducting Gallium Oxide"

ResearchGate: researchgate.net/profile/Ta-Shun-Chou
LinkedIn: linkedin.com/in/ta-shun-chou/

Arved works since July 2020 as PhD student in the NEMOCRYS project of the group Model Experiments at the IKZ. His topic is the development and validation of multiphysical computer simulations for crystal growth processes using open source software. If you are interested in his research visit his research gate website or contact him on LinkedIn.

Section Fundamental Description, Junior Research Group "Model experiments"

ResearchGate: researchgate.net/profile/Arved_Enders-Seidlitz2
LinkedIn: linkedin.com/in/arved-enders-seidlitz-465830176/

Anastasiia's mission is to develop gain materials for lasers with emission wavelengths in the 1 µm and 3 µm spectral range. Both are of high interest and possess a wide range of applications in materials processing, medical treatment and environmental monitoring. In particular cubic sesquioxide crystals enabled excellent laser performance when doped with Yb³⁺ and Er³⁺. However, the growth of sesquioxides is very challenging due to their high melting temperatures of more than 2400°C.

After study in material science in university Ulm, Yujia works in IKZ on SiGe-based material for qubit devices. She has been working on isotopically engineered epitaxy as well as heterostructure characterization. On the way to push Si and Ge such classical semiconductor into quantum information age, the requirements of SiGe heterostructure crystal perfection are leveled - such as atomic steps on the interface, local strain relaxation, local tilt in the strained thin Si layer should be reduced to extend the coherence time of confined electron spin as much as possible. To develop high performance quantum computer is a multidisciplinary task including material science.

Before Yujia’s research adventure in group IV semiconductor, she also worked on III-V materials AlN and GaN as well as II-VI material ZnO.

Section: Semiconductor Nanostructures

LinkedIn: linkedin.com/in/yujia-liu-940824/

After finishing his studies in crystalline materials at University of Freiburg, he started working at the IKZ on high purity germanium for gamma radiation detectors. HPGe is the best material due its purity and the fact that it has less electrical active defects than any other solid material. He has been working on reduction of germanium dioxide to germanium. The germanium obtained from reduction is zone refined to remove the impurities and HPGe crystals were grown using Czochralski method. Electrical resistivity, Hall effect measurements on HPGe crystals (20-300K), PTIS(7K), etch pit density analysis, and carrier lifetime measurements with MDP were performed to understand the electrical properties of HPGe. He is proud to be a member of the LEGEND collaboration.

Section: Semiconductors, Group: Cz-IV

LinkedIn: linkedin.com/in/pradeep-chandra-palleti

Gallium oxide (Ga₂O₃) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. Palvan´s scientific interest include the charge and spin transport physics of device related gallium oxide (Ga₂O₃) bulk crystals and homoepitaxial layers. To understand the electrical properties of gallium oxide crystals grown at the IKZ, he uses conductivity and Hall effect measurements (20-1100K), deep-level transient and optical  spectroscopy (20-800K) as well as for optical characterization he uses transmission / reflection spectrometers in the wavelength range from 120nm to 100um and micro-Raman spectrometer with 6 excitation wavelengths (325-785 nm).

Section Experimental Characterization

LinkedIn: linkedin.com/in/palvan-seyidov-640708187

Lucas holds a double degree in Mechanical and Materials Engineering from a Franco-Brazilian cooperation program. During his master thesis, he developed a finite element model of the quench phenomenon in superconducting magnets for particle accelerators. His experience with multiphysics simulations is now in use at the IKZ for modelling Si growth via the Float Zone method. Once robust and validated models are obtained, they will be used to train Neural Networks and optimize growth parameters. Machine learning is expected to significantly help overcome current challenges in growing 8-inch Float Zone Si crystals.

Section: Fundamental Description / Numerical Simulation

LinkedIn: linkedin.com/in/lrvieira/en