Aluminum Nitride
Aluminum Nitride Substrates
Single crystalline aluminum nitride (AlN) is a promising material for a wide range of advanced applications in microelectronics and optoelectronics. Its outstanding properties include a wide band gap, high thermal conductivity and chemical stability. This makes it suitable for applications in optoelectronics (UV-C light emitting diodes (LED)s) for disinfection and metrology, power electronics ('High Electron Mobility Transistor` (HEMT) for electromobility, radio frequency technology for wireless communication (HEMT and 'surface acoustic wave` (SAW) filters) and high temperature sensing (thermocouples and piezoelectric elements) for temperature or force measurement in high temperature processes.
The high lattice matching of single crystalline AlN substrates to functional Al-rich AlGaN layers allows the fabrication of high quality AlN / AlGaN heterostructures, which are of central importance for the performance of the above devices in the diverse applications.
We have developed processes and technologies for the preparation of AlN substrates with low dislocation density, high UV transparency and high surface quality. Epi-ready single crystalline wafers are available from the IKZ in different quality grades according to the specification sheets for research purposes or for technology development.
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