The future potential of quantum technology and especially quantum computing is very high. SiGe heterostructures thereby constitute one of the most promising material platforms, since they combine high crystalline perfection and purity with potentially easy scalability, and the possibility to create a spin-neutral environment for quantum dots by isotopic enrichment.

The IKZ combines the competence and experience in processing isotopically enriched semiconductor materials such as ²⁸Si, ⁷²Ge, and ⁷⁶Ge to supply high-quality quantum materials.

The research of our group focuses on the growth of SiGe-based heterostructures by molecular beam epitaxy (MBE) and their characterization for the application in quantum technology. We are specialized in nuclear spin-free SiGe/Si/SiGe and SiGe/Ge/SiGe heterostructures for spin qubits, as well as Si/SiO₂ structures (Silicon on Insulator, SOI) for optical quantum emitters. The scientific interest centers upon obtaining preferably atomically flat interfaces, the realization of low dislocation densities, as well as the control of chemical impurities.

This work is funded by the Leibniz collaborative research project SiGeQuant and is shared with the partner institutes IHP (Frankfurt/Oder), IQI und ITH (RWTH Aachen), MPQ (Garching), as well as the Russian partners IPM RAS and University Nizhny.

Due to the miniaturisation of technical components in modern semiconductor technology, micro- and nanostructures hold a key position. Currently, these structures are produced industrially using complex top-down methods such as photolithography. The aim of the research group is to develop and theoretically describe alternative bottom-up possibilities in order to selectively grow only the required material. This is intended to save raw materials, time and technical effort.

Subject of our research is the local control of nucleation and material instabilities, e.g. dewetting phenomena, by mechanical, thermal or laser-induced surface and interface modifications. In this way, the growth of micro- and nanostructures is systematically controlled and investigated. In addition to innovative manufacturing processes, this approach offers the possibility of observing fundamental structure formation mechanisms and relating them to a theoretical context.

A new paradigm to assemble crystalline materials is established by layer transfer, a method to built-up novel epitaxial heterostructures which cannot be grown by traditional methods due to incompatibility of lattice parameters, symmetry, or others. We are aiming for a comprehensive and flexible technical approach to facilitate the realization of various demands in basic and applied research, seeking synergies with local academic and industrial partners.

We are currently setting up a layer transfer station in HV-conditions with the goal of a fully remote-controlled transfer process. We will transfer exfoliated monolayers of 2D-crystals and epitaxial films up to 2”-wafers. In basic research, a special interest is in emergent phases such as strongly correlated electronic matter in 2D-heterostructures. In applied research, high performance systems can be realized by the combination of the best materials for the best function in a hybrid approach.