Our mission is to identify and secure potential innovations together with our scientists, research partners and industrial collaborators, and to stimulate and accompany their commercial exploitation.
The Leibniz-Institut für Kristallzüchtung possesses an extensive patent portfolio, which is being continuously expanded. The portfolio encompasses all of the institute's key research areas and can be licensed to companies if they are interested.
Licenses entitle you to use our comprehensive, proprietary, technical know-how, which is constantly expanding and can lead to new products and innovative processes. The type and scope of the licenses are varying, as well as their form that can be agreed upon individually.
For further information please contact us.
Halbleiter / Semiconductors
J. Boschker, Ch. Frank-Rotsch, M. Zorn, T. Schröder
Substrat für ein Halbleiterbauelement Halbleitervorrichtung und Verfahren zum Herstellen eines Substrats für ein Halbleiterbauelement
DE102020131850, US 18/039668
K. Stolze, P. Steglich, K, Berger, U. Juda, J. Martin
Verfahren und Vorrichtung zum Herstellen einer Halbleiterstruktur
Transfer Printable Single-Crystalline Coupons
DE 102022100661.1, EP23151074.4
M. Wünscher, H. Riemann
Vorrichtung für das tiegelfreie Zonenziehen von Kristallstäben
(Apparatus for continuous zone-melting a crystalline rod)
DE102012022965B4, EP 2920342B1 (DE, DK, LV)
N. Abrosimov, J. Fischer, H. Riemann, M. Renner
Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Halbleitermaterial
Process and apparatus for producing semiconductor single crystals
DE102010005520B4
Registered Trademark
KRISTMAG®
Oxide und Laser-Materialien / Oxides and laser materials
Z. Galazka, R. Uecker, D. Klimm, M. Bickermann
Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible
EP3242965B1 (AT, BE, CH, DE, CZ, ES, FR, GB, IT, NL, PL), KR101979130B1, US20170362738A1
Z. Galazka, R. Uecker, R. Fornari
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal
US10208399
C. Guguschev, M. Brützam, D. Schlom, H. Paik
Method and setup for growing bulk single crystals
DE102020114524A1, US20200378030A1, KR1020200138082A
C. Guguschev, E. Haurat, D. Klimm, C. Kränkel, A. Uvarova
Verfahren und Vorrichtung zum Züchten eines Seltenerd-Sesquioxid-Kristalls
Method and device for growing a rare earth sesquioxide crystal
DE102020120715, WO/EP21748512.7
Z. Galazka, S. Ganschow, M. Bickermann, T. Schröder, W. Häckl
Method and apparatus for producing electrically conducting bulk ß-Ga203 single crystals and electrically conducting bulk ß-Ga203 single crystal
EP22154305.1, PCT/EP/2023051212, TW 112102595
Z. Galazka, S. Ganschow, M. Bickermann, T. Schröder
Melt-grown bulk b-(AlxGa1-x)2O3 single crystals and method for producing bulk b-(AlxGa1-x)2O3 single crystals
PCT/EP2022/078252, TW 112138623
Aluminiumnitrid / Aluminium nitride
A. Dittmar, C. Hartmann, J. Wollweber, M. Bickermann
(Sc, Y):AlN Einkristalle für Gitter-angepasste AlGaN Systeme
((Sc,Y):AlN single crystals for lattice-adapted AlGaN systems)
KR1020180048926A
C. Hartmann, T. Straubinger
Kristallzüchtungsvorrichtung und Verfahren zum Züchten eines Halbleiters
Crystal growth design and method for growing a semiconductor
DE 102022119343.8, US18/363366
Halbleiter-Schichten und Nanostrukturen / Semiconducting layers and nanostructures
O. Ernst, T. Boeck, F. Lange, H.-P. Schramm, T. Teubner, D. Uebel
Verfahren zur Mikrostrukturierung
(Method for Microstructuring)
DE102020126553
D. Uebel, R. Bansen, T. Boeck, O. Ernst, H.-P. Schramm, T. Teubner
Silizium-basierte Wafer und Verfahren zur Herstellung von Silizium-basierten Wafern
(Silicon-based wafers and method of fabricating silicon-based wafers)
DE102020132900
O. Ernst, D. Uebel, T. Boeck
Verfahren zur Herstellung von isotopenangereicherten Germanium-Wasserstoffverbindungen
(Process for the preparation of isotope-enriched germanium-hydrogen compounds)
DE 102022105177.3, PCT/EP2023/054384
S. Zahedi-Azad, T. Boeck, O. Ernst, H.-P. Schramm, D. Uebel
Verfahren und Züchtungsaufbau zum Herstellen lokalisierter Strukturen
(Method and growth setup for the fabrication of localized structures)
DE 102022116962.6
Oxidschichten / Oxide layers
M. Albrecht, A. Baki, K. Irmscher, T. Schulz, J. Schwarzkopf, J. Stöver
Verfahren zum Herstellen eines Kristalls mit Perowskitstruktur
Formingless Resistive Switching by Off-Stoichiometry Control of ABO3 Perovskites
DE1020132049, PCT/EP2021/082505
T. Chou, A. Popp, W. Häckl
Method for producing a gallium oxide layer on a substrate
EP 21187231.2, PCT/EP 2022/069433, TW 111126459
S. Bin-Anooz, T.-S. Chou, W. Häckl, A. Popp
Method for producing a gallium oxide layer on a substrate
EP 22194558.7
Röntgenoptik / X-ray optics
P. Gaal
Bereitstellen eines transienten Gitters
(Providing a transient grid)
DE102019132393B4, PCT/EP2020/082942