Publikationen

Filter
Veröffentlichungsjahr
—

Sortieren nach

Suche (Autor, Titel)

Löschen
Publikation
Topological phases in polar oxide nanostructuresJ. Junquera, Y. Nahas, S. Prokhorenko, L. Bellaiche, J. Iñiguez, D. G. Schlom, L. Q. Chen, S. Salahuddin, D. A. Muller, L. W. Martin and R. RameshReviews of Modern Physics(2), (2023)
Waveguide-integrated silicon T centresA. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. A. Brunelle, E. R. MacQuarrie, N. R. Lee-Hone, M. Ruether, M. Kazemi, A. T. K. Kurkjian, S. Roorda, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, D. B. Higginbottom and S. SimmonsOptics Express(9), (2023) 15045-15057
X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxyV. M. Kaganer, O. V. Konovalov, G. Calabrese, D. van Treeck, A. Kwasniewski, C. Richter, S. Fernández-Garrido and O. BrandtJournal of Applied Crystallography(2023) 439-448
Li self-diffusion and ion conductivity in congruent LiNbO3 and LiTaO3 single crystalsC. Kofahl, L. Dörrer, B. Muscutt, S. Sanna, S. Hurskyy, U. Yakhnevych, Y. Suhak, H. Fritze, S. Ganschow, H. SchmidtPhys. Rev. Materials 7 (2023) 033403
Valley-orbit splitting of lithium-related donors in siliconS. G. Pavlov, N. V. Abrosimov, H.-W. HübersPhys. Rev. B 107 (2023) 115205
Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopyE. Sauter, N. V. Abrosimov, J. Hübner, M. OestreichPhys. rev. res. 5 (2023) 013182
Development of Large-Diameter and Very High Purity Ge Crystal Growth Technology for DevicesR. R. Sumathi, A. Gybin, K. P. Gradwohl, P. C. Palleti, M. Pietsch, K. Irmscher, N. Dropka and U. JudaCrystal Research and Technology(5), (2023)
Li self-diffusion and ion conductivity in congruent LiNbO3 and LiTaO3 single crystalsC. Kofahl, L. Dörrer, B. Muscutt, S. Sanna, S. Hurskyy, U. Yakhnevych, Y. Suhak, H. Fritze, S. Ganschow and H. SchmidtPhysical Review Materials(3), (2023)
Molecular beam epitaxy of KTaO3T. Schwaigert, S. Salmani-Rezaie, M. R. Barone, H. Paik, E. Ray, M. D. Williams, D. A. Muller, D. G. Schlom and K. AhadiJournal of Vacuum Science & Technology A(2), (2023)
Self-stabilization of the equilibrium state in ferroelectric thin filmsP. Gaal, D. Schmidt, M. Khosla, C. Richter, P. Boesecke, D. Novikov, M. Schmidbauer, J. SchwarzkopfApplied Surface Science 613 (2023) 155891
Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopyE. Sauter, N. V. Abrosimov, J. Hübner, M. OestreichPhys. rev. res. 5 (2023) 013182
Valley-orbit splitting of lithium-related donors in siliconS. G. Pavlov, N. V. Abrosimov and H. W. HübersPhysical Review B(11), (2023)
Self-stabilization of the equilibrium state in ferroelectric thin filmsP. Gaal, D. Schmidt, M. Khosla, C. Richter, P. Boesecke, D. Novikov, M. Schmidbauer, J. SchwarzkopfApplied Surface Science 613 (2023) 155891
Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD TechniqueY. J. Liu, K. P. Gradwohl, C. H. Lu, Y. Yamamoto, T. Remmele, C. Corley-Wiciak, T. Teubner, C. Richter, M. Albrecht and T. BoeckEcs Journal of Solid State Science and Technology(2), (2023)
Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) beta-Ga2O3 thin films using in-situ reflectance spectroscopyT. S. Chou, S. Bin Anooz, R. Gruneberg, T. V. T. Tran, J. Rehm, Z. Galazka, and A. PoppJournal of Crystal Growth 603 (2023)
Nanoscale Surface Structure of Nanometer-Thick Ferroelectric BaTiO3 Films Revealed by Synchrotron X-ray Scanning Tunneling Microscopy: Implications for Catalytic Adsorption ReactionsP. Abbasi, N. Shirato, R. E. Kumar, I. V. Albelo, M. R. Barone, D. N. Cakan, M. D. Cruz-Jáuregui, S. Wieghold, D. G. Schlom, V. Rose, T. A. Pascal and D. P. FenningAcs Applied Nano Materials(3), (2023) 2162-2170
Non-volatile electric-field control of inversion symmetryL. Caretta, Y. T. Shao, J. Yu, A. B. Mei, B. F. Grosso, C. Dai, P. Behera, D. Lee, M. McCarter, E. Parsonnet, K. P. Harikrishnan, F. Xue, X. W. Guo, E. S. Barnard, S. Ganschow, Z. J. Hong, A. Raja, L. W. Martin, L. Q. Chen, M. Fiebig, K. J. Lai, N. A. Spaldin, D. A. Muller, D. G. Schlom, and R. RameshNature Materials 22 (2), 207-+ (2023)
On-demand electrical control of spin qubitsW. Gilbert, T. Tanttu, W. H. Lim, M. K. Feng, J. Huang, J. D. Cifuentes, S. Serrano, P. Mai, R. C. C. Leon, C. C. Escott, K. M. Itoh, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Morello, A. Laucht, C. H. Yang, A. Saraiva and A. S. DzurakNature Nanotechnology(2), (2023) 131-136
Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. Wang, W. Fang, L. Jiang, Y. Liu, R. Wang, L. Dai, J. Zhao, J. Bi, Z. Liu, L. Zhao, Z. Jiang, Z. Song, J. Schwarzkopf, T. Schroeder, S. Wu, Z. Ye, W. Ren, S. Song, G. NiuAdv. Funct. Mater. (2023) 2213296
On-demand electrical control of spin qubitsW. Gilbert, T. Tanttu, W. H. Lim, M. Feng, J. Y. Huang, J. D. Cifuentes, S. Serrano, P. Y. Mai, R. C. C. Leon, C. C. Escott, K. M. Itoh, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Morello, A. Laucht, C. H. Yang, A. Saraiva, A. S. DzurakNat. Nanotechnol. 18 (2023) 131–136