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Mid-infrared emission properties of the Tm₃₊-doped sesquioxide crystals Y₂O₃, Lu₂O₃, Sc₂O₃ and mixed compounds (Y,Lu,Sc)₂O₃ around 1.5-, 2- and 2.3-µmR. Moncorgé, Y. Guyot, C. Kränkel, K. Lebbou, and A. YoshikawaJournal of Luminescence 241, (2022), 118537

Interface Shape under the Insulating Baffle in Vertical Bridgman SystemsN. Dropka, and Aleksandar G. OstrogorskyCryst. Res. Technol. (2022), 2100251

Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride LayersL. Matiwe, C. Hartmann, L.Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, and T. StraubingerPhys. Status Solidi A (2022), 2100707

Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, and T. BoeckLangmuir, 38, (2022), 762−768

Solid-state laser cooling in Yb:CaF₂ and Yb:SrF₂ by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, and H. TanakaOptics Letters, 47, (2022), 2

Spectroscopic properties of Tb³⁺ as an ion for visible lasersS. Kalusniak, E. Castellano-Hernández, H. Yalçinoğlu. H. Tanaka, and C. KränkelAppl. Phys. B 128, (2022), 33

Controllable dynamic single- and dual-channel graphene-Q-switched operation in a beam-splitter-type Yb:YAG channel waveguideJ. E. Bae, T. Calmano, C. Kränkel, and F. RotermundLas. Phot. Rev., (2022), 202100501

Magnesium-Related Donors in Silicon: State of the ArtY. A. Astrov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, N. V. AbrosimovPhys. Status Solidi A 219 (2022) 2200463

Controllable Dynamic Single- and Dual-Channel Graphene Q-Switching in a Beam-Splitter-Type Channel Waveguide LaserJ. E. Bae, T. Calmano, C. Kränkel, F. RotermundLaser Photon. Rev. 16 (2022) 100501

Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, T. BoeckLangmuir 38 (2022) 762–768

Growth of bulk beta-Ga2O3 single crystals by the Czochralski method Z. GalazkaJ. Appl. Phys. 131 (2022) 031103

Solid-state laser cooling in Yb:CaF₂ and Yb:SrF₂ by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Lett. 47 (2022) 333-336

Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon CrystalsA. Sabanskis, K. Dadzis, R. Menzel, J. VirbulisCrystals 12 (2022) 174

Resonant electronic Raman scattering from Ir⁴⁺ ions in β-Ga₂O₃P. Seyidov, M. Ramsteiner, Z. Galazka, K. IrmscherJ. Appl. Phys. 131 (2022) 035707

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703

Toward precise n-type doping control in MOVPE grown β-Ga₂O₃ thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-19

Toward Precise n-Type Doping Control in MOVPE-Grown beta-Ga2O_{3<7sub> Thin Films by Deep-Learning Approach}T. Chou, S. Bin Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. T. V. Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12 (2022) 8

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer J. A T. de Guzman, V. P. Markevich, I. D. Hawkins, J. Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, A. R. Peaker J. Appl. Phys. 130 (2021) 245703

Fabrication of chemically and structurally abrupt Eu _1−xLa_xO/SrO/Si interfaces and their analysis by STEM-EELSR. Held, J. A. Mundy, M. E. Holtz, D. Hodash, T. Mairoser, D. A. Muller, D. G. SchlomPhys. Rev. Mater. 5 (2022) 124419

Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa₂O₄(100) Single-CrystalsF. Reichmann, J. Dabrowski, A. P. Becker, W. M. Klesse, K. Irmscher, R. Schewski, Z. Galazka, M. Mulazzi Phys. Status Solidi B 259 (2021) 2100452