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Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction ImagingT. Straubinger, C. Hartmann, M. P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schroder, D. Hanschke, and C. RichterCrystal Growth & Design (2023)
Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium IngotsA. Subramanian, N. Abrosimov, A. Gybin, C. Guguschev, U. Juda, A. Fiedler, F. Baerwolf, I. Costina, A. Kwasniewski, A. Dittmar, and R. R. SumathiJournal of Electronic Materials 52 (8), 5178-5188 (2023)
Development of Large-Diameter and Very High Purity Ge Crystal Growth Technology for DevicesR. R. Sumathi, A. Gybin, K. P. Gradwohl, P. C. Palleti, M. Pietsch, K. Irmscher, N. Dropka, and U. JudaCrystal Research and Technology (2023)
Enhancement-mode vertical (100) beta-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm-1K. Tetzner, M. Klupsch, A. Popp, S. Bin Anooz, T. S. Chou, Z. Galazka, K. Ickert, M. Matalla, R. S. Unger, E. B. Treidel, M. Wolf, A. Trampert, J. Wurfl, and O. HiltJapanese Journal of Applied Physics 62 (SF) (2023)
Ge-ion implantation and activation in (100) beta-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealingK. Tetzner, A. Thies, P. Seyidov, T. S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Pnopp, J. Wurfl, and O. HiltJournal of Vacuum Science & Technology A 41 (4) (2023)
Stimulated-emission cross-sections of trivalent erbium ions in the cubic sesquioxides Y2O3, Lu2O3, and Sc2O3A. Uvarova, P. Loiko, S. Kalusniak, E. Dunina, L. Fomicheva, A. Kornienko, S. Balabanov, A. Braud, P. Camy, and C. KrankelOptical Materials Express 13 (5), 1385-1400 (2023)
Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. K. Wang, W. C. Fang, L. Y. Jiang, Y. Y. Liu, R. B. Wang, L. Y. Dai, J. Y. Zhao, J. S. Bi, Z. H. Liu, L. B. Zhao, Z. D. Jiang, Z. T. Song, J. Schwarzkopf, T. Schroeder, S. L. Wu, Z. G. Ye, W. Ren, S. N. Song, and G. NiuAdvanced Functional Materials 33 (19) (2023)
Recrystallization of MBE-Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition FurnaceR. B. Wang, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters 17 (5) (2023)
Y-Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters (2023)
Charge transport and acoustic loss in lithium niobate-lithium tantalate solid solutions at temperatures up to 900 degrees CU. Yakhnevych, C. Kofahl, S. Hurskyy, S. Ganschow, Y. Suhak, H. Schmidt, and H. FritzeSolid State Ionics 392 (2023)
Bulk single crystals and physical properties of β-(AlxGa1-x)2O3 (x=0-0.35) grown by the Czochralski methodZ. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. B. Anooz, K. Irmscher, M. Suendermann, D. Klimm, T. S. Chou, J. Rehm, T. Schroeder and M. BickermannJournal of Applied Physics(3), (2023)
Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction ImagingT. Straubinger, C. Hartmann, M. P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schröder, D. Hänschke and C. RichterCrystal Growth & Design(3), (2023) 1538-1546
Electromechanical Behavior of Al/Al2O3 Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance MeasurementsB. Putz, T. E. J. Edwards, E. Huszar, P. A. Gruber, K. P. Gradwohl, P. Kreiml, D. M. Tobbens, and J. MichlerAdvanced Engineering Materials 25 (2) (2023)
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceC. Corley-Wiciak, C. Richter, M. H. Zoellner, I. Zaitsev, C. L. Manganelli, E. Zatterin, T. U. Schülli, A. A. Corley-Wiciak, J. Katzer, F. Reichmann, W. M. Klesse, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Virgilio and G. CapelliniAcs Applied Materials & Interfaces(2), (2023) 3119-3130
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device applicationT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, M. Pietsch, J. Rehm, T. T. V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler and A. PoppApplied Physics Letters(5), (2023)
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2023) 2200204
Thermally activated increase of the average grain size as the origin of resistivity enhancement inNbO2 films grown by pulsed-laser depositionN. Jaber, J. Feldl, J. Stoever, K. Irmscher, M. Albrecht, M. Ramsteiner and J. SchwarzkopfPhysical Review Materials(1), (2023)
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2022) 2200204
Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquidA. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, N. V. Abrosimov; R. K. Zhukavin, V. N. Shastin Mater. Sci. Eng. B 286 (2022) 115979
Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics applicationJ. Rehm, T.-S. Chou, S. Bin Anooz, P. Seyidov, A. Fiedler, Z. Galazka, A. Popp Appl. Phys. Lett. 121 (2022) 240503