Leibniz-Institut für Kristallzüchtung

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Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 121912

Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 114607

Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning TechniquesN. Dropka, K. Böttcher, and M. HolenaCrystals, 11, (2021), 1218

Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 155201

A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 125706

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 2100459

Phase diagram studies for the growth of (Mg,Zr):SrGa₁₂O₁₉ crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–7139

Czochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu₂O₃–Sc₂O₃–Y₂O₃C. Kränkel, A. Uvarova, É. Haurat, L. Hülshoff, M. Brützam, C. Guguschev, S. Kalusniak, and D. KlimmActa Cryst. B, 77, (2021), 23786-23798

Investigation on the optical nonlinearity of the layered magnesium-mediated metal organic framework (Mg-MOF-74)Y. Liang, W. Qiao, T. Feng, B. Zhang, Y. Zhao, Y. Song, T. Li, and C. KränkelOptics Express, 29, (2021), 23786-23798

Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning methodS. Kayser, N. Rotundo, N. Dropka, and P. FarrellJournal of Crystal Growth, 571, (2021), 126248

The Features of Infrared Absorption of Boron-Doped SiliconLyudmila Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolai Abrosimov, and Helge RiemannPhys. Status Solidi A, 218, (2021), 2100181

Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level TrapsJoyce Ann T. De Guzman, Vladimir P. Markevich, Ian D. Hawkins, Hussein M. Ayedh, José Coutinho, Jeff Binns, Robert Falster, Nikolay V. Abrosimov, Iain F. Crowe, Matthew P. Halsall, and Anthony R. PeakerPhys. Status Solidi A, 218, (2021), 2100108

Sub-6 optical-cycle Kerr-lens mode-locked Tm:Lu₂O₃ and Tm:Sc₂O₃ combined gain media laser at 2.1 μmA. Suzuki, C. Kränkel, and M. TokurakawaOptics Express, 29, (2021), 19465-19471

AlF3-assisted flux growth of mullite whiskers and their application in fabrication of porous mullite-alumina monolithsA. Abdullayev, D.Klimm, F. Kamutzki, A. Gurlo, M. F. BekheetOpen Ceramics 7, (2021), 100145

Is Reduced Strontium Titanate a Semiconductor or a Metal?C. Rodenbücher, C. Guguschev, C. Korte, S. Bette, and K. SzotCrystals, 11, (2021), 744

Melt Growth and Physical Properties of Bulk LaInO₃ Single CrystalsZ. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M.Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, S. Bergmann, H. Cho, K. Char, T. Schroeder, M. BickermannPhys. Status Solidi A (2021), 2100016

Phase diagrams, superdomains, and superdomain walls in K_xNa_1-xNbO₃ epitaxial thin filmsM.-J. Zhou, B. Wang, A. Ladera, L. Bogula, H.-X. Liu, L.-Q. Chen, C.-W. NanActa Materialia, 215, (2021), 117038

Influence of diluted acid mixtures on selective etching of MHz- and kHz-fs-laser inscribed structures in YAGK. Hasse, D. Kip, and C. KränkelOptical Materials Express, 11, (2021), 1546-1554

Interstitial H₂ in ²⁹SiE. V. Lavrov, V. V. Melnikov, N. V. AbrosimovPhysical Review B, 103 (2021), 205204

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protonsN. Arutyunov, R. Krause-Rehberg, M. Elsayed, V. Emtsev, N. Abrosimov, G. Oganesyan and V. KozlovskiJournal of Physics: Condensed Matter, 33, (2021), 245702

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