Publikationen

PublikationVeröffentlichungDatum
Faceting and metal-exchange catalysis in (010) beta-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxyP. Mazzolini, Vogt, P.; Schewski, R.; Wouters, C.; Albrecht, M.; Bierwagen, O.APL Materials 7, 022511 (2019)12-2018
Influence of Mg-codoping, non-stoichiometry and Ga-admixture on LuAG:Ce scintillation propertiesJ. Pejchal, J. Barta, V. Babin, A. Beitlerova, P. Prusa, R. Kucerkova, D. Panek, T. Parkman, C. Guguschev, L. Havlak, P. Zemenova, K. Kamada, A. YoshikawaOptical Materials 86 (2018) 213–23212-2018
Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaicsF. Ringleb, S. Andree, B. Heidmann, J. Bonse, K. Eylers, O. Ernst, T. Boeck, M. Schmid, J. KrügerBeilstein Journal of Nanotechnology 9 (2018) 3025-303812-2018
Step-flow growth in homoepitaxy of β-Ga2O3(100)—The influence of the miscut direction and facetingR. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, M. AlbrechtAPL Mater. 7, 022515 (2019)12-2018
Local Strain and Crystalline Defects in GaN/AIGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AIGaN Buried LayersH. V. Stanchu, Kuchuk, Andrian V.; Mazur, Yuriy I.; Li, Chen; Lytvyn, Petro M.; Schmidbauer, Martin; Maidaniuk, Yurii; Benamara, Mourad; Ware, Morgan E.; Wang, Zhiming M.; Salamo, Gregory J.Cryst. Growth Des. 2019, 19, 1, 200–21012-2018
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsO. Weinstein, Alexander Virozub, Wolfram Miller, Simon BrandonJournal of Crystal Growth 509, Volume 509, 1 March 2019, Pages 71-8612-2018
The inverse perovskite BaLiF3: single-crystal neutron diffraction and analyses of potential ion pathwaysD. Wiedemann, F. Meutzner, O. Fabelo, and S. Ganschow Acta Crystallographica, B74 (2018) 643-65012-2018
Step-flow growth in homoepitaxy of ß- Ga2O3 (100)—The influence of the miscut direction and faceting R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. AlbrechtAPL Materials 7, 022515 (2019)12-2018
Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in 28SiR. J. S. Abraham, A. DeAbreu,K. J. Morse,V. B. Shuman,L. M. Portsel,A. N. Lodygin,Yu. A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltPhysical Review B 98, 205203 (2018)11-2018
Heteroepitaxial Growth of T-Nb2O5 on SrTiO3Jos E. Boschker, Toni Markurt, Martin Albrecht and Jutta SchwarzkopfNanomaterials 2018, 8(11), 89511-2018
The influence of travelling magnetic field on phosphorus distribution in ntype multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M. KiesslingJournal of Crystal Growth 507 (2019) 299–30611-2018
Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centersC. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. ThewaltPhysical Review B, 98 (2018) 19520111-2018
Chemical, Structural, and Electronic Characterization of the (010) Surface of Single Crystalline Bismuth VanadateM. Favaro, Uecker, Reinhard; Nappini, Silvia; Pis, Igor; Magnano, Elena; Bluhm, Hendrik; van de Krol, Roel; Starr, David E.J. Phys. Chem. C 2019, 123, 13, 8347–835911-2018
Fabrication and Investigation of Photovoltaic Converters Based on Polycrystalline Silicon Grown on Borosilicate GlassK. M. Gambaryan, V. G. Harutyunyan, V. M. Aroutiounian, T. Boeck, R. Bansen, C. EhlersJournal of Contemporary Physics (Armenian Academy of Sciences) 53 (2018) 351 - 35711-2018
Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substratesM. Gunes, M.O. Ukelge, O. Donmez, A. Erol, C. Gumus, H. Alghamdi, H.V.A. Galeti, M. Henini, M. Schmidbauer, J. Hilska, J. Puustinen and M. GuinaSemiconductor Science and Technology, (2018) 1-10811-2018
Dy3+:Lu2O3 as a novel crystalline oxide for mid-infrared laser applicationsA. M. Heuer, P. von Brunn, G. Huber, and C. KränkelOptical Materials Express, 8 (2018) 3447-345511-2018
Efficient directly emitting high-power Tb3+:LiLuF4 laser operating at 587.5 nm in the yellow range E. Castellano- Hernández, Philip W. Metz, Maxim Demesh, and Christian Kränkel Optics Letters Vol. 43, Issue 19, pp. 4791-4794 (2018)10-2018
Efficient directly emitting high-power Tb3+:LiLuF4 laser operating at 587.5 nm in the yellow range E. Castellano-Hernández, P. W. Metz, M. Demesh, C. Kränkel Optics Letters, 43 (2018) 4791-479410-2018
Thermal expansion of single-crystalline ß-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffractionZ. Cheng, Michael Hanke, Zbigniew Galazka, and Achim TrampertAppl. Phys. Lett. 113, 182102 (2018)10-2018
Physical vapor transport growth of bulk Al1-xScxN single crystals A. Dittmar, J. Wollweber, M. Schmidbauer, D. Klimm, C. Hartmann, M. BickermannJournal of Crystal Growth, 500 (2018) 74-7910-2018