Leibniz-Institut für Kristallzüchtung - Publikationen

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Local Strain and Crystalline Defects in GaN/AIGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AIGaN Buried LayersH. V. Stanchu, Kuchuk, Andrian V.; Mazur, Yuriy I.; Li, Chen; Lytvyn, Petro M.; Schmidbauer, Martin; Maidaniuk, Yurii; Benamara, Mourad; Ware, Morgan E.; Wang, Zhiming M.; Salamo, Gregory J.Cryst. Growth Des. 2019, 19, 1, 200–210

Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsO. Weinstein, Alexander Virozub, Wolfram Miller, Simon BrandonJournal of Crystal Growth 509, Volume 509, 1 March 2019, Pages 71-86

The inverse perovskite BaLiF₃: single-crystal neutron diffraction and analyses of potential ion pathwaysD. Wiedemann, F. Meutzner, O. Fabelo, and S. Ganschow Acta Crystallographica, B74 (2018) 643-650

Step-flow growth in homoepitaxy of ß- Ga₂O₃ (100)—The influence of the miscut direction and faceting R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. AlbrechtAPL Materials 7, 022515 (2019)

Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in ²⁸SiR. J. S. Abraham, A. DeAbreu,K. J. Morse,V. B. Shuman,L. M. Portsel,A. N. Lodygin,Yu. A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltPhysical Review B 98, 205203 (2018)

Heteroepitaxial Growth of T-Nb₂O₅ on SrTiO₃Jos E. Boschker, Toni Markurt, Martin Albrecht and Jutta SchwarzkopfNanomaterials 2018, 8(11), 895

The influence of travelling magnetic field on phosphorus distribution in ntype multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M. KiesslingJournal of Crystal Growth 507 (2019) 299–306

Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centersC. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. ThewaltPhysical Review B, 98 (2018) 195201

Chemical, Structural, and Electronic Characterization of the (010) Surface of Single Crystalline Bismuth VanadateM. Favaro, Uecker, Reinhard; Nappini, Silvia; Pis, Igor; Magnano, Elena; Bluhm, Hendrik; van de Krol, Roel; Starr, David E.J. Phys. Chem. C 2019, 123, 13, 8347–8359

Fabrication and Investigation of Photovoltaic Converters Based on Polycrystalline Silicon Grown on Borosilicate GlassK. M. Gambaryan, V. G. Harutyunyan, V. M. Aroutiounian, T. Boeck, R. Bansen, C. EhlersJournal of Contemporary Physics (Armenian Academy of Sciences) 53 (2018) 351 - 357

Optical properties of GaAs_1-xBi_x/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substratesM. Gunes, M.O. Ukelge, O. Donmez, A. Erol, C. Gumus, H. Alghamdi, H.V.A. Galeti, M. Henini, M. Schmidbauer, J. Hilska, J. Puustinen and M. GuinaSemiconductor Science and Technology, (2018) 1-108

Dy³⁺:Lu₂O₃ as a novel crystalline oxide for mid-infrared laser applicationsA. M. Heuer, P. von Brunn, G. Huber, and C. KränkelOptical Materials Express, 8 (2018) 3447-3455

Efficient directly emitting high-power Tb³⁺:LiLuF₄ laser operating at 587.5 nm in the yellow range E. Castellano- Hernández, Philip W. Metz, Maxim Demesh, and Christian Kränkel Optics Letters Vol. 43, Issue 19, pp. 4791-4794 (2018)

Efficient directly emitting high-power Tb³⁺:LiLuF₄ laser operating at 587.5 nm in the yellow range E. Castellano-Hernández, P. W. Metz, M. Demesh, C. Kränkel Optics Letters, 43 (2018) 4791-4794

Thermal expansion of single-crystalline ß-Ga₂O₃ from RT to 1200 K studied by synchrotron-based high resolution x-ray diffractionZ. Cheng, Michael Hanke, Zbigniew Galazka, and Achim TrampertAppl. Phys. Lett. 113, 182102 (2018)

Physical vapor transport growth of bulk Al_1-xSc_xN single crystals A. Dittmar, J. Wollweber, M. Schmidbauer, D. Klimm, C. Hartmann, M. BickermannJournal of Crystal Growth, 500 (2018) 74-79

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growthC. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, Th. Teubner, K. Hinrichs, O. Ernst, T. BoeckCrystEngComm 20 (2018) 7170 - 7177

ß- Ga₂O₃ for wide-bandgap electronics and optoelectronicsZ. Galazka Semiconductor Science and Technology 33(11) 2018 - Topical Review

Investigation of the Nd₃O₂–Lu₂O₃–Sc₂O₃ phase diagram for the preparation of perovskite-type mixed crystals NdLu_1-xSc_xO₃T. Hirsch, Christo Guguschev, Albert Kwasniewski, Steffen Ganschow, Detlef KlimmJournal of Crystal Growth 505 (2019) 38–43

Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regimeN. Modsching, C. Paradis, P. Brochard, N. Jornod, K. Gürel, C. Kränkel, S. Schilt, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 26, Issue 22, pp. 28461-28468 (2018)