In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growthC. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, Th. Teubner, K. Hinrichs, O. Ernst, T. BoeckCrystEngComm 20 (2018) 7170 - 717710-2018
ß- Ga2O3 for wide-bandgap electronics and optoelectronicsZ. Galazka Semiconductor Science and Technology 33(11) 2018 - Topical Review10-2018
Investigation of the Nd3O2–Lu2O3–Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3T. Hirsch, Christo Guguschev, Albert Kwasniewski, Steffen Ganschow, Detlef KlimmJournal of Crystal Growth 505 (2019) 38–4310-2018
Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regimeN. Modsching, C. Paradis, P. Brochard, N. Jornod, K. Gürel, C. Kränkel, S. Schilt, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 26, Issue 22, pp. 28461-28468 (2018)10-2018
Broadband terahertz pulse generation driven by an ultrafast thin-disk laser oscillatorC. Paradis, J. Drs, N. Modsching, O. Razskazovskaya, F. Meyer, C. Kränkel, C. J. Saraceno, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 26, Issue 20, pp. 26377-26384 (2018)10-2018
Competing Inversion-Based Lasing and Raman Lasing in Doped SiliconS. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, and H.-W. HübersPHYSICAL REVIEW X 8, 041003 (2018)10-2018
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-methodH. J. Rost, R. Menzel, D. Siche, U. Juda, S. Kayser, F.M. Kießling, L. Sylla, T. RichterJournal of Crystal Growth 500 (2018) 5–1010-2018
Enhanced magnon spin transport in NiFe2O4 thin films on a lattice-matched substrateA. V. Singh, L. Liang, L. J. Cornelissen, Z. Galazka, A. Gupta, B. J. van Wees, and T. KuschelAppl. Phys. Lett. 113, 162403 (2018)10-2018
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantationK. Tetzner, Andreas Thies, Eldad Bahat Treidel, Frank Brunner, Günter Wagner,Joachim WürflAppl. Phys. Lett. 113, 172104 (2018)10-2018
III ArsenideCh. Frank-Rotsch, Natasha Dropka, Peter RotschBook: Single Crystals of Electronic Materials, (18-043)09-2018
Interface control by rotating submerged heater/baffle in vertical Bridgman configurationA. G. Ostrogorsky, A.G.Ostrogorsky V.Riabov N.DropkaJournal of Crystal Growth 498 (2018) 269-27609-2018
Intentional polarity conversion of AlN epitaxial layers by oxygen N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès, M. AlbrechtScientific Reports, 8 (2018) 1411109-2018
Pseudomorphic spinel ferrite films with perpendicular anisotropy and low dampingR. C. Budhani, S. Emori, Z. Galazka, B. A. Gray, M. Schmitt, J. J. Wisser, H.-M. Jeon, H. Smith, P. Shah, M. R. Page, M. E. McConney, Y. Suzuki, B. M. HoweApplied Physics Letters 113 (2018) 18210208-2018
Interplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4C. Hirschle, J. Schreuer, Z. GalazkaJournal of Applied Physics, 124 (2018) 06511108-2018
Radii of Rydberg states of isolated silicon donorsJ. Li, Nguyen H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, C. R. Pidgeon, A. Fisher, Zaiping Zeng, Y.-M. Niquet, and B. N. MurdinPHYSICAL REVIEW B 98, 085423 (2018)08-2018
Photoluminescence from GeSn nano- heterostructuresV. Schlykow, Peter Zaumseil, Markus Andreas Schubert, Oliver Skibitzki, Yuji Yamamoto, Wolfgang Matthias Klesse, Yaonan Hou, Michele Virgilio, Monica De Seta, Luciana Di Gaspare, Thomas Schroeder and Giovanni CapelliniNanotechnology 29 (2018) 415702 (8pp)08-2018
Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin films promoting selective surface acoustic wave propagationL. v. Helden, M. Schmidbauer, S. Liang, M. Hanke, R. Wördenweber, J.SchwarzkopfNanotechnology, 29, 2018, 41570408-2018
Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlatticesP. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, m. Albrecht, M. Siekacz, C. SkierbiszewskiJournal of Applied Physics 124, 065701 (2018)08-2018
n situ Transmission Electron Microscopy Annealing for Crystallization and Phase Stability Studies in the Ga2O3-In2O3 SystemC. Wouters, Toni Markurt, Oliver Bierwagen, Christpher Sutton, Martin Albrecht, Published online by Cambridge University Press 201908-2018
Further investigations of the deep double donor magnesium in siliconR. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons and M. L. W. Thewalt Phys. Rev. B 98, 045202, 201807-2018