Leibniz-Institut für Kristallzüchtung

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Biomolecular control over local gating in bilayer graphene induced by ferritinS. K. Karuppannan, J. Martin, W. Xu, R. R. Pasula, S. Lim, C. A. NijhuisiScience 25 (2022) 104128

Molecular beam epitaxy of single-crystalline bixbyite (In_1−xGa_x)₂O₃ films (x≤0.18): Structural properties and consequences of compositional inhomogeneityA. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, O. BierwagenPhys. Rev. Materials 6 (2022) 033604

Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin LimitC. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. MaxsonPhys. Rev. Lett. 128 (2022) 114801

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiCM. Schubert, S. Knight, S. Richter, P. Kühne, V. Stanishev, A. Ruder, M. Stokey, R. Korlacki, K. Irmscher, P. Neugebauer, V. DarakchievaAppl. Phys. Lett. 120 (2022) 102101

Canonical approach to cation flux calibration in oxide molecular-beam epitaxyJ. Sun, C. T. Parzyck, J. H. Lee, C. M. Brooks, L. F. Kourkoutis, X. Ke, R. Misra, J. Schubert, F. V. Hensling, M. R. Barone, Z. Wang, M. E. Holtz, N. J. Schreiber, Q. Song, H. Paik, T. Heeg, D. A. Muller, K. M. Shen, D. G. SchlomPhys. Rev. Mater. 6 (2022) 033802

SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p–n diodesK. Tetzner, K. Egbo, M. Klupsch, R.-S. Unger, A. Popp, T.-S. Chou, S. Bin Anooz, Z. Galazka, A. Trampert, O. Bierwagen, J. Würfl Appl. Phys. Lett. 120 (2022) 112110

Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed EpitaxyP. Vogt, F. V. E. Hensling, K. Azizie, J. P. McCandless, J. Park, K. DeLello, D. A. Muller, H. G. Xing, D. Jena, D. G. SchlomPhys. Rev. Applied 17 (2022) 034021

A consistent picture of excitations in cubic BaSnO₃ revealed by combining theory and experimentW. Aggoune, A. Eljarrat, D. Nabok, K. Irmscher, M. Zupancic, Z. Galazka, M. Albrecht, C. Koch, C. Draxl Communication Materials 3 (2022) 12

Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3

On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705

Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials researchO.C. Ernst, Y. Liu and T. BoeckZ. Kristallogr. (2022)

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects V. Emtsev, N. Abrosimov, V. Kozlovski, S. Lastovskii, G. Oganesyan, D. PoloskinJ. Appl. Phys. 131 (2022) 125705

Revisiting the Growth of Large (Mg,Zr):SrGa₁₂O₁₉ Single Crystals: Core Formation and Its Impact on Structural Homogeneity Revealed by Correlative X-ray ImagingC. Guguschev, C. Richter, M. Brützam, K. Dadzis, C. Hirschle, T. M. Gesing, M. Schulze, A. Kwasniewski, J. Schreuer, D. G. SchlomCryst. Growth Des. 22 (2022) 2557−2568

Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowiresM. Hanke, C. Richter, F. Lange, Anna Reis, J. Parker, T. Boeck Appl. Phys. Lett. 120 (2022) 101902

Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄M. Hilfiker, E. Williams, U. Kilic, Y. Traouli, N. Koeppe, J. Rivera, A. Abakar, M. Stokey, R. Korlacki, Z. Galazka, K. Irmscher, M. Schubert Appl. Phys. Lett. 120 (2022) 132105

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineeringJ. A. Mundy, B. F. Grosso, C. A. Heikes, D. F. Segedin, Z. Wang, Y.-T. Shao, C. Dai, B. H. Goodge, Q. N. Meier, C. T. Nelson, B. Prasad, F. Xue, S. Ganschow, D. A. Muller, L. F. Kourkoutis, L.-Q. Chen, W. D. Ratcliff, N. A. Spaldin, R. Ramesh, D. G. SchlomSci. Adv.8 (2022) eabg5860

Interfacial charge transfer and persistent metallicity of ultrathin SrIrO₃/SrRuO₃ heterostructuresJ. N. Nelson, N. J. Schreiber, A. B. Georgescu, B. H. Goodge, B. D. Faeth, C. T. Parzyck, C. Zeledon, L. F. Kourkoutis, A. J. Millis, A. Georges, D. G. Schlom, K. M. ShenSci. Adv.8 (2022) eabj0481

Growth of Ta₂SnO₆ Films, a Candidate Wide-Band-Gap p-Type Oxide M. Barone, M. Foody, Y. Hu, J. Sun, B. Frye, S. S. Perera, B. Subedi, H. Paik, J. Hollin, M. Jeong, K. Lee, C. H. Winter, N. J. Podraza, K. Cho, A. Hock, D. G. SchlomJ. Phys. Chem. C 126 (2022) 3764–3775

Oxide Two-Dimensional Electron Gas with High Mobility at Room-TemperatureK. Eom, H. Paik, J. Seo, N. Campbell, E. Y. Tsymbal, S. H. Oh, M. S. Rzchowski, D. G. Schlom, C. EomAdv. Sci. 9 (2022) 2105652

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