Leibniz-Institut für Kristallzüchtung

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Solid solutions of lithium niobate and lithium tantalate: crystal growth and the ferroelectric transitionU. Bashir, K. Böttcher, D. Klimm, S. Ganschow, F. Bernhardt, S. Sanna, M. Rüsing, L. M. Eng and M. BickermannFerroelectrics(1), (2023) 250-262

Electronic nematic order in the normal state of strontium ruthenateR. S. Russell, H. P. Nair, K. M. Shen, D. G. Schlom and J. W. HarterPhysical Review B(8), (2023)

Fanout periodic poling of BaMgF4 crystalsS. J. Herr, H. Tanaka, I. Breunig, M. Bickermann and F. KühnemannOptical Materials Express(8), (2023) 2158-2164

Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium IngotsA. Subramanian, N. Abrosimov, A. Gybin, C. Guguschev, U. Juda, A. Fiedler, F. Baerwolf, I. Costina, A. Kwasniewski, A. Dittmar and R. R. SumathiJournal of Electronic Materials(8), (2023) 5178-5188

Kerr-lens mode-locked 49-fs Tm³⁺:YScO₃ single-crystal laser at 2.1μmA. Suzuki, S. Kalusniak, S. Ganschow, C. Kränkel and M. TokurakawaOptics Letters(16), (2023) 4221-4224

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low dampingX. Y. Zheng, S. Channa, L. J. Riddiford, J. J. Wisser, K. Mahalingam, C. T. Bowers, M. E. McConney, A. T. N'Diaye, A. Vailionis, E. Cogulu, H. W. Ren, Z. Galazka, A. D. Kent and Y. SuzukiNature Communications(1), (2023)

Vivianite-parasymplesite solid solution: A sink for arsenic in ferruginous environments?J. P. H. Perez, M. Okhrymenko, R. Blukis, V. Roddatis, S. Mayanna, J. F. W. Mosselmans and L. G. BenningGeochemical Perspectives Letters(2023) 50-56

Diffusion of Magnesium in Czochralski SiliconL. M. Portsel, A. N. Lodygin, N. V. Abrosimov and Y. A. AstrovPhysica Status Solidi a-Applications and Materials Science(13), (2023)

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealingK. Tetzner, A. Thies, P. Seyidov, T. S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Pnopp, J. Würfl and O. HiltJournal of Vacuum Science & Technology A(4), (2023)

Nucleation and Crystallization of Ferrous Phosphate Hydrate via an Amorphous IntermediateA. Paskin, T. Couasnon, J. P. H. Perez, S. S. Lobanov, R. Blukis, S. Reinsch and L. G. BenningJournal of the American Chemical Society(28), (2023) 15137-15151

Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared MetasurfaceA. Attiaoui, G. Daligou, S. Assali, O. Skibitzki, T. Schroeder and O. MoutanabbirAdvanced Materials(28), (2023)

Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on SiI. Peracchi, C. Richter, T. Schulz, J. Martin, A. Kwasniewski, S. Kläger, C. Frank-Rotsch, P. Steglich and K. StolzeCrystals(7), (2023)

Real- space imaging of periodic nanotextures in thin films via phasing of diffraction dataZ. M. Shao, N. Schnitzer, J. Ruf, O. Y. Gorobtsov, C. Dai, B. H. Goodge, T. N. Yang, H. Nair, V. A. Stoica, J. W. Freeland, J. P. Ruff, L. Q. Chen, D. G. Schlom, K. M. Shen, L. F. Kourkoutis and A. SingerProceedings of the National Academy of Sciences of the United States of America(28), (2023)

Shallow donor impurity of bismuth in silicon: Peculiar electrical properties of bismuth-related defects produced by electron irradiationV. Emtsev, N. Abrosimov, V. Kozlovski, G. Oganesyan and D. PoloskinJournal of Applied Physics(2), (2023)

Strain relaxation from annealing of SiGe heterostructures for qubitsY. J. Liu, K. P. Gradwohl, C. H. Lu, K. Dadzis, Y. Yamamoto, L. Becker, P. Storck, T. Remmele, T. Boeck, C. Richter and M. AlbrechtJournal of Applied Physics(3), (2023)

UV-laser-diode-pumped visible Tb³⁺:LiLuF₄ lasersM. Badtke, S. Kalusniak, H. Tanaka and C. KränkelOptics Letters(13), (2023) 3379-3382

Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environmentsT. J. Smart, F. V. E. Hensling, D. Y. Kim, L. N. Majer, Y. E. Suyolcu, D. Dereh, D. G. Schlom, D. Jena, J. Mannhart and W. BraunJournal of Vacuum Science & Technology A(4), (2023)

A model heterostructure with engineered Berry curvatureN. J. Schreiber, L. D. Miao, B. H. Goodge, L. F. Kourkoutis, K. M. Shen and D. G. SchlomApl Materials(6), (2023)

Employing high-temperature-grown SrZrO₃ buffer to enhance the electron mobility in La:BaSnO₃-based heterostructuresP. Ngabonziza, J. Park, W. Sigle, P. A. van Aken, J. Mannhart and D. G. SchlomApplied Physics Letters(24), (2023)

Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm^-1K. Tetzner, M. Klupsch, A. Popp, S. Bin Anooz, T. S. Chou, Z. Galazka, K. Ickert, M. Matalla, R. S. Unger, E. B. Treidel, M. Wolf, A. Trampert, J. Würfl and O. HiltJapanese Journal of Applied Physics(SF), (2023)

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