Leibniz-Institut für Kristallzüchtung

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Influence of 2s Bloch wave state excitations on quantitative HAADF STEM imagingC. Wouters, Markurt, T.; Albrecht, M.; Rotunno, E.; Grillo, V.Physical Review B, Vol. 100, Iss. 18, 2019

Semiconductor Crystal Growth under the Influence of Magnetic FieldsCh. Frank-Rotsch, Natasha Dropka, Frank-Michael Kießling, and Peter RudolphCryst. Res. Technol.

Thermoelastic properties of rare-earth scandates SmScO3, TbScO₃ and DyScO₃C. Hirschle, J. Schreuer, S. Ganschow, and I. Schulze-JonackJournal of Applied Physics 126, 165103 (2019)

Ferroelectric Domain Walls in PbTiO₃ Are Effective Regulators of Heat Flow at Room TemperatureE. Langenberg, Saha, Dipanjan; Holtz, Megan E.; Wang, Jian-Jun; Bugallo, David; Ferreiro-Vila, Elias; Paik, Hanjong; Hanke, Isabelle; Ganschow, Steffen; Muller, David A.; Chen, Long-Qing; Catalan, Gustau; Domingo, Neus; Malen, Jonathan; Schlom, Darrell G.; Rivadulla, FranciscoNano Lett. 2019, 19, 11, 7901–7907

Thin channel ß -Ga₂O₃ MOSFETs with self-aligned refractory metal gatesK. J. Liddy, Green, Andrew J.; Hendricks, Nolan S.; Heller, Eric R.; Moser, Neil A.; Leedy, Kevin D.; Popp, Andreas; Lindquist, Miles T.; Tetlak, Stephen E.; Wagner, Guenter; Chabak, Kelson D.; Jessen, Gregg H.Applied Physics Express, Volume 12, Number 12

Growth and Properties of Intentionally Carbon-Doped GaN LayersE. Richter, Franziska C. Beyer, Friederike Zimmermann, Günter Gärtner, Klaus Irmscher, Ivan Gamov, Johannes Heitmann, Markus Weyers, and Günther TränkleCryst. Res. Technol. 2020, 55, 1900129

Transport Properties and Finite Size Effects in ß-Ga₂0₃ thin filmsJohannes Boy, Martin Handwerg, Olivio Chiatti, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, Saskia F. FischerScientific Reports volume 9, Article number: 13149 (2019)

Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline siliconL.-Ch. Chuang, Maeda,Kensaku; Morito, Haruhiko; Shiga, Keiji; Miller, Wolfram; Fujiwara, KozoMaterialia, Volume 7, September 2019, 100357

Fast forecasting of VGF crystal growth process by dynamic neural networksN. Dropka, Martin Holena, Stefan Ecklebe, Christiane Frank-Rotsch, Jan WinklerJournal of Crystal Growth

Deep-level noise characterization of MOVPE-grown ß-Ga₂O₃Ch. Golz, Galazka, Zbigniew; Popp, Andreas; Bin Anooz, Saud; Wagner, Guenter; Hatami, Fariba; Masselink, W. TedAppl. Phys. Lett. 115, 133504 (2019)

Selective etching of fs-laser inscribed high aspect ratio microstructures in YAGK. Hasse, G. Huber, and C. KränkelOptical Materials Express Vol. 9, Issue 9, pp. 3627-3637 (2019)

REScO₃ Substrates-Purveyors of Strain EngineeringD. Klimm, Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.Crystal Research and Technology, Volume55, Issue2 Special Issue: The 50th Anniversary of the German Association for Crystal Growth (Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung, DGKK), February 2020, 1900111

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated EmissionV. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. HübersSemiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBEM. Siekacz, Wolny, Pawel; Ernst, Torsten; Grzanka, Ewa; Staszczak, Grzegorz; Suski, Tadeusz; Feduniewicz-Zmuda, Anna; Sawicka, Marta; Moneta, Joanna; Anikeeva, Mariia; Schulz, Tobias; Albrecht, Martin; Skierbiszewski, CzeslawSuperlattices and Microstructures Volume 133, September 2019, 106209

Lateral 1.8 kV β -Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of MeritK. Tretzner, Eldad Bahat Treidel, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Günter Wagner, Andreas Thies, Karina Ickert, Hassan Gargouri, Joachim WürflIEEE Electron Device Letters ( Volume: 40, Issue: 9, Sept. 2019)

Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interfaceN. Thieme, M. Keil,D. Meier, P. Boenisch, K. Dadzis, O. Paetzold, M. Stelter, L. Buettner, J. CzarskeJournal of Crystal Growth, Volume 522, p. 221-229.

Polarity Tunable Trionic Electroluminescence in Monolayer WSe₂J. Wang, Lin, Fanrong; Verzhbitskiy, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Martin, Jens; Eda, GoldNano Lett. 2019, 19, 10, 7470–7475

Role of interface quality for the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic propertiesM. Althammer, Singh, Amit Vikram; Wimmer, Tobias; Galazka, Zbigniew; Huebl, Hans; Opel, Matthias; Gross, Rudolf; Gupta, ArunavaAppl. Phys. Lett. 115, 092403 (2019)

Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrateT. Kamikawa, Gandrothula, Srinivas; Araki, Masahiro; Li, Hongjian; Oliva, Valeria Bonito; Wu, Feng; Cohen, Daniel; Speck, James S.; Denbaars, Steven P.; Nakamura, ShujiOptic Express ,Vol. 27, Issue 17, pp. 24717-24723 (2019

Tailoring the scintillation properties of ß- Ga₂O₃M. Makowski, W. Drozdowski, M. E. Witkowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. Galazka Vol. 9, No. 9 / 1 September 2019 / Optical Materials Express 3738

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