Leibniz-Institut für Kristallzüchtung

Filter

Deflecting Dendrites by Introducing Compressive Stress in Li₇La₃Zr₂O₁₂ Using Ion ImplantationF. Flatscher, J. Todt, M. Burghammer, H. S. Soreide, L. Porz, Y. J. Li, S. Wenner, V. Bobal, S. Ganschow, B. Sartory, R. Brunner, C. Hatzoglou, J. Keckes and D. RettenwanderSmall(12), (2024)

Ferroelectric Hysteresis Measurement in the Lithium Niobate-Lithium Tantalate Single-Crystalline Family: Prospects for Lithium Niobate-TantalateB. Koppitz, S. Ganschow, M. Rüsing and L. M. EngPhysica Status Solidi a-Applications and Materials Science2024)

High-fidelity spin qubit operation and algorithmic initialization above 1 KJ. Y. Huang, R. Y. Su, W. H. Lim, M. K. Feng, B. van Straaten, B. Severin, W. Gilbert, N. D. Stuyck, T. Tanttu, S. Serrano, J. D. Cifuentes, I. Hansen, A. E. Seedhouse, E. Vahapoglu, R. C. C. Leon, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, C. C. Escott, N. Ares, S. D. Bartlett, A. Morello, A. Saraiva, A. Laucht, A. S. Dzurak and C. H. YangNature(8005), (2024)

Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in siliconS. G. Pavlov and N. V. AbrosimovMaterials Science in Semiconductor Processing(2024)

Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge₂Sb₂Te₅ electronic synapsesQ. Wang, Y. C. Wang, Y. K. Wang, L. Y. Jiang, J. Y. Zhao, Z. T. Song, J. S. Bi, L. B. Zhao, Z. D. Jiang, J. Schwarzkopf, S. L. Wu, B. Zhang, W. Ren, S. N. Song and G. NiuInfomat2024)

Numerical modelling of Cz-β-Ga₂O₃ crystal growth in reactive atmosphereG. K. Chappa, V. Artemyev, A. Smirnov, D. Klimm and N. DropkaJournal of Crystal Growth(2024)

Oxygen Diffusion in Li(Nb,Ta)O₃ Single CrystalsC. Kofahl, J. Uhlendorf, B. A. Muscutt, M. N. Pionteck, S. Sanna, H. Fritze, S. Ganschow and H. SchmidtPhysica Status Solidi a-Applications and Materials Science2024)

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam EpitaxyN. Kafi, S. D. Kang, C. Golz, A. Rodrigues-Weisensee, L. Persichetti, D. Ryzhak, G. Capellini, D. Spirito, M. Schmidbauer, A. Kwasniewski, C. Netzel, O. Skibitzki and F. HatamiCrystal Growth & Design(7), (2024) 2724-2733

Simulation of crucible-free growth of monocrystalline silicon fibres for mirror suspension in gravitational-wave detectorsL. Vieira, I. Buchovska, I. Tsiapkinis, A. Wintzer, K. Dadzis and R. MenzelJournal of Crystal Growth(2024)

Synthesis of thin film infinite-layer nickelates by atomic hydrogen reduction: Clarifying the role of the capping layerC. T. Parzyck, V. Anil, Y. Wu, B. H. Goodge, M. Roddy, L. F. Kourkoutis, D. G. Schlom and K. M. ShenApl Materials(3), (2024)

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1-xSn_x MicrodisksI. Zaitsev, A. A. Corley-Wiciak, C. Corley-Wiciak, M. H. Zoellner, C. Richter, E. Zatterin, M. Virgilio, B. Martin-García, D. Spirito and C. L. ManganelliPhysica Status Solidi-Rapid Research Letters(3), (2024)

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN-on-Si(111) PIN-Structures for Power ElectronicsS. Michler, S. Thapa, S. Besendürfer, M. Albrecht, R. Weingaertner and E. MeissnerPhysica Status Solidi B-Basic Solid State Physics2024)

2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in Germanium.Gill, T. B.; Pavlov, S.; Kidd, C. S.; Dean, P.; Burnett, A. D.; Dunn, A.; Li, L. H.; Abrosimov, N. V.; Hübers, H. W.; Linfield, E. H.; Davies, A. G.:Freeman, J. R.,Acs Photonics;(2024), 1447-1455

High-fidelity spin qubit operation and algorithmic initialization above 1 K.Huang, J. Y.; Su, R. Y.; Lim, W. H.; Feng, M. K.; van Straaten, B.; Severin, B.; Gilbert, W.; Stuyck, N. D.; Tanttu, T.; Serrano, S.; Cifuentes, J. D.; Hansen, I.; Seedhouse, A. E.; Vahapoglu, E.; Leon, R. C. C.; Abrosimov, N. V.; Pohl, H. J.; Thewalt, M. L. W.; Hudson, F. E.; Escott, C. C.; Ares, N.; Bartlett, S. D.; Morello, A.; Saraiva, A.; Laucht, A.; Dzurak, A. S.:Yang, C. H.,Nature;(2024),

Determination of Gallium Concentration in Silicon from Low-Temperature Photoluminescence AnalysisT. O. A. Fattah, J. Jacobs, V. P. Markevich, N. V. Abrosimov, I. D. Hawkins, M. P. Halsall, I. F. Crowe and A. R. PeakerSolar Rrl(4), (2024)

Growth, characterization, and efficient laser operation of Czochralski- and micro-pulling-down-grown Yb3+:YScO3 mixed sesquioxidesS. Kalusniak, A. Uvarova, I. Arlt, L. Hülshoff, P. Eckhof, P. Wegener, M. Bruetzam, S. Ganschow, H. Guguschev, H. Tanaka and C. KränkelOptical Materials Express(2), (2024) 304-318

Molecular Beam Epitaxy of β-(In_xGa_1-x)₂O₃ on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas ConfinementP. Mazzolini, C. Wouters, M. Albrecht, A. Falkenstein, M. Martin, P. Vogt and O. BierwagenAcs Applied Materials & Interfaces(10), (2024) 12793-12804

Picometer atomic displacements behind ferroelectricity in the commensurate low-temperature phase in multiferroic YMn₂O₅T. Weigel, C. Richter, M. Nentwich, E. Mehner, V. Garbe, L. Bouchenoire, D. Novikov, D. C. Meyer and M. ZschornakPhysical Review B(5), (2024)

Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott insulatorA. Verma, D. Golez, O. Y. Gorobtsov, K. Kaj, R. Russell, J. Z. Kaaret, E. Lamb, G. Khalsa, H. P. Nair, Y. F. Sun, R. Bouck, N. Schreiber, J. P. Ruf, V. Ramaprasad, Y. Kubota, T. Togashi, V. A. Stoica, H. Padmanabhan, J. W. Freeland, N. A. Benedek, O. G. Shpyrko, J. W. Harter, R. D. Averitt, D. G. Schlom, K. M. Shen, A. J. Millis and A. SingerNature Physics2024)

Polar discontinuity governs surface segregation and interface termination: A case study of LaInO₃/BaSnO₃M. Zupancic, W. Aggoune, A. Gloter, G. Hoffmann, F. P. Schmidt, Z. Galazka, D. Pfützenreuter, A. A. Riaz, C. Schlueter, H. Amari, A. Regoutz, J. Schwarzkopf, T. Lunkenbein, O. Bierwagen, C. Draxl and M. AlbrechtPhysical Review Materials(3), (2024)

Publikationen