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Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2W.-C. Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, and Louis F. J. PiperJournal of Applied Physics 125, 082539 (2019)
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter ExcitationR. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. ShastinSemiconductors volume 53, pages1255–1257(2019)
Characterization of 30 76Ge enriched Broad Energy Ge detectors for GERDA Phase IIM. Agostini, A. M. Bakalyarov, E. Andreotti, M. Balata, I. Barabanov, L. Baudis, N. Barros, C. Bauer, E. Bellotti, S. Belogurov, G. Benato, A. Bettini, L. Bezrukov, T. Bode, D. Borowicz, V. Brudanin, R. Brugnera, D. Budjáš, A. Caldwell, C. Cattadori, A. Chernogorov, V. D’Andrea, E. V. Demidova, N. Di Marco, A. Domula, E. Doroshkevich, V. Egorov, R. Falkenstein, K. Freund, A. Gangapshev, A. Garfagnini, C. Gooch, P. Grabmayr, V. Gurentsov, K. Gusev, J. Hakenmüller, A. Hegai, M. Heisel, S. Hemmer, R. Hiller, W. Hofmann, M. Hult, L. V. Inzhechik, J. Janicskó Csáthy, J. Jochum, M. Junker, V. Kazalov, Y. Kermaïdic, T. Kihm, I. V. Kirpichnikov, A. Kirsch, A. Kish, A. Klimenko, R. Kneißl, K. T. Knöpfle, O. Kochetov, V. N. Kornoukhov, V. V. Kuzminov, M. Laubenstein, A. Lazzaro, B. Lehnert, Y. Liao, M. Lindner, I. Lippi, A. Lubashevskiy, B. Lubsandorzhiev, G. Lutter, C. Macolino, B. Majorovits, W. Maneschg, G. Marissens, M. Miloradovic, R. Mingazheva, M. Misiaszek, P. Moseev, I. Nemchenok, K. Panas, L. Pandola, K. Pelczar, A. Pullia, C. Ransom, S. Riboldi, N. Rumyantseva, C. Sada, F. Salamida, M. Salathe, C. Schmitt, B. Schneider, S. Schönert, A.-K. Schütz, O. Schulz, B. Schwingenheuer, O. Selivanenko, E. Shevchik, M. Shirchenko, H. Simgen, A. Smolnikov, L. Stanco, L. Vanhoefer, A. A. Vasenko, A. Veresnikova, K. von Sturm, V. Wagner, A. Wegmann, T. Wester, C. Wiesinger, M. Wojcik, E. Yanovich, I. Zhitnikov, S. V. Zhukov, D. Zinatulina, A. J. Zsigmond, K. Zuber, G. Zuzel European Physical Journal C (2019), Bd. 79, Article 978
Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga2O3 Grown by MOVPES. Bin Anooz, A. Popp, R. Grüneberg, A. Fiedler, K. Irmscher, R.Schewski, M. Albrecht, Z.Galazka, G. Wagner2019 Compound Semiconductor Week (CSW)
Thermal analysis and crystal growth of doped Nb2O5J.Hidde, Christo Guguscheva, Detlef Klimma,Journal of Crystal Growth 509 (2019) 60–65
Investigation of the Nd2O3-Lu2O3-Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3T. Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen GanschowJournal of Crystal Growth 505 (2019) 38–43
Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlNA. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. BickermannJ. Crystal Growth, 505 (2018) 69-73
The electronic structure of epsilon-Ga2O3M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. FornariAPL Materials 7, 022522 (2019);
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopyG. Niu, P. Calka, P. Huang, S. Sharath, S. Petzold, A.Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M. Schubert, F. Bärwolf, W. Ren, Z. -G. Ye, E. Perez, C. Wenger, L. Alff and T. SchroederMaterials Research Letters Volume 7, 2019 - Issue 3, Pages 117-123
Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in SiliconS. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. HübersPhys. Status Solidi B 2019, 256, 1800514
Step-flow growth in homoepitaxy of ß- Ga2O3 (100)—The influence of the miscut direction and faceting R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. AlbrechtAPL Materials 7, 022515 (2019)
β-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, R. SchewskiRadiation Measurements 121 (2019) 49–53
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge1V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. OganesyanaSemiconductors , 52 (2018) 1677-1685
Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shiftM. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, R. GoldhahnAPL Materials 7, 022508 (2019);
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystalsZ. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, M. BickermannAPL Materials 7, 022512 (2019)
Tri-carbon defects in carbon doped GaNK. Irmscher, I. Gamov , E. Nowak , G. Gärtner, F. Zimmermann, F. C. Beyer, E. Richter, M. Weyers, G. TränkleAppl. Phys. Lett. 113, 262101 (2018);
Faceting and metal-exchange catalysis in (010) beta-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxyP. Mazzolini, Vogt, P.; Schewski, R.; Wouters, C.; Albrecht, M.; Bierwagen, O.APL Materials 7, 022511 (2019)
Influence of Mg-codoping, non-stoichiometry and Ga-admixture on LuAG:Ce scintillation propertiesJ. Pejchal, J. Barta, V. Babin, A. Beitlerova, P. Prusa, R. Kucerkova, D. Panek, T. Parkman, C. Guguschev, L. Havlak, P. Zemenova, K. Kamada, A. YoshikawaOptical Materials 86 (2018) 213–232
Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaicsF. Ringleb, S. Andree, B. Heidmann, J. Bonse, K. Eylers, O. Ernst, T. Boeck, M. Schmid, J. KrügerBeilstein Journal of Nanotechnology 9 (2018) 3025-3038
Step-flow growth in homoepitaxy of β-Ga2O3(100)—The influence of the miscut direction and facetingR. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, M. AlbrechtAPL Mater. 7, 022515 (2019)