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X-ray nano-imaging of defects in thin film catalystsvia cluster analysisA. Luo, O. Y. Gorobtsov, J. N. Nelson, D.-Y. Kuo, T. Zhou, Z. Shao, R. Bouck, M. J. Cherukara, M. V. Holt, K. M. Shen, D. G. Schlom, J. Suntivich, A. SingerAppl. Phys. Lett. 121 (2022) 153904
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect DensitiesA. Muhin, M. Guttmann, V. Montag, N. Susilo, E. Ziffer, L. Sulmoni, S. Hagedorn, N. Lobo-Ploch, J. Rass, L. Cancellara, S. Wu, T. Wernicke, M. Kneissl Phys. Status Solidi A (2022) 2200458
Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s -> 2p0 TransitionR. K. Zhukavin, P. A. Bushuikin, V. V. Kukotenko, Y. Y. Choporova, N. Dessmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. Abrosimov, V. N. Shastin, JEPT Lett. 116 (2022) 137–143
What is the speed limit of martensitic transformations?S. Schwabe, K. Lünser, D. Schmidt, K. Nielsch, P. Gaal, S. FählerScience and Technology of Advanced Materials 23 (2022) 633-641
New properties of boron-oxygen dimer defect in boron-doped Czochralski siliconL. I. Khirunenko,1, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, and H. RiemannJournal of Applied Physics 132 (2022) 135703
Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon CrystalsK. Surovovs, M. Surovovs, A. Sabanskis, J. Virbulis, K. Dadzis, R. Menzel, N. AbrosimovCrystals 12 (2022) 1718
Quasi-monocrystalline silicon for low-noise end mirrors in cryogenic gravitational-wave detectorsF. M. Kiessling, P. G. Murray, M. Kinley-Hanlon, I. Buchovska, T. K. Ervik, V. Graham, J. Hough, R. Johnston, M. Pietsch, S. Rowan, R. Schnabel, S. C. Tait, J. Steinlechner, I. W. MartinPhys. Rev. Res. 4 (2022) 043043
Selective bacterial separation of critical metals: towards a sustainable method for recycling lithium ion batteries V. Echavarri-Bravo, H. Amari, J. Hartley, G. Maddalena, C. Kirk, M. W. Tuijtel, N. D. Browning, L. E. HorsfallGreen Chem. 24 (2022) 8512
Crystal habit analysis of LiFePO4 microparticles by AFM and first-principles calculationsK.-P. Gradwohl, P. Benedek, M. Popov, A. Matković, J. Spitaler, M. Yarema, V. Wood, C. TeichertCrystEngComm 24 (2022) 6891-6901
Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradationM.-H. Lee, T.-S. Chou, S. Bin Anooz, Z. Galazka, A. Popp, R. L. PetersonAPL Materials 10 (2022) 091105
Artificial Intelligence for Crystal Growth and CharacterizationS. Schimmel, W. Sun, N. Dropka Crystals 12 (2022) 1232
Growth of PdCoO2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopyQ. Song, J. Sun, C. T. Parzyck, L. Miao, Q. Xu, F. V. E. Hensling, M. R. Barone, C. Hu, J. Kim, B. D. Faeth, H. Paik, P. D. C. King, K. M. Shen, D. G. SchlomAPL Mater. 10 (2022) 091113
Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by in situ x-ray diffraction

Marília de Oliveira Guimarães

, Carsten Richter, Michael Hanke, Saud Bin Anooz, Yankun Wang, Jutta Schwarzkopf, Martin Schmidbauer
Journal of Applied Physics 132 (2022) 154102
Excitation of intracenter terahertz radiation by plasma oscillations in electron–hole liquidA.O.

Zakhar’in

, A.V. Andrianov, A.G. Petrov, N.V. Abrosimov, R.Kh. Zhukavin, V.N Shastin
Materials Science and Engineering B 286 (2022) 115979
Nucleation of Nickel Disilicide Precipitates in Float-Zone Silicon: The Role of VacanciesP. Saring, N. V. Abrosimov, M. SeibtPhys. Status Solidi A 219 (2022) 2200220
Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon I. Buchovska,K. Dadzis, N. Dropka, F. Kiessling,Sol. Energy Mater. Sol. Cells 248 (2022) 111989
Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubitsY. Liu, K.-P. Gradwohl, C.-H. Lu, T. Remmele, Y. Yamamoto, M. H. Zoellner, T. Schroeder, T. Boeck, H Amari, C. Richter, M. Albrecht Journal of Applied Physics 132 (2022) 085302
Thickness effect on ferroelectric domain formation in compressively strained K0.65Na0.35NbO3 epitaxial filmsY. Wang, S. Bin Anooz, G. Niu, M. Schmidbauer, L. Wang, W. Ren, J. SchwarzkopfPhys. Rev. Materials 6 (2022) 084413
Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulationsK.-P. Gradwohl, W. Miller, N. Dropka, R. R. SumathiComputational Materials Science 211(2022) 111537.
Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphireT. Chou, S. B. Anooz, R. Grüneberg, N. Dropka, W. Miller, T. T. V.Tran, J. Rehm, M. Albrecht, A. PoppJournal of Crystal Growth 592(2022) 126737