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Indium incorporation in homoepitaxial β- Ga2O3 thin films grown by metal organic vapor phase epitaxyS. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Albrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka, and G. WagnerJournal of Applied Physics 125, 195702 (2019)
High field-emission current density from β-Ga2O3 nanopillarsA. Grillo, Julien Barrat, Z.Galazka, M. Passacantando, F. Giubileo, L. Iemmo, G. Luongo, F. Urban, C. Dubourdieu, A. BartolomeoAppl. Phys. Lett. 114, 193101 (2019)
Asymmetry of the Atomic Core Structure of Dissociated a-Screw Dislocation in GaN Probed by Polarization Optical SpectroscopyO. Medvedev, M. Albrecht, O. VyvenkoRapid Research Letter, Vol. 13, Issue 9,1900169
Sub-100-fs Kerr lens mode-locked Yb:Lu2O3 thin-disk laser oscillator operating at 21 W average powerN. Modsching, J. Drs., J. Fischer, C. Paradis, F. Labaye, M. Gaponenko, C. Kränkel, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 27, Issue 11, pp. 16111-16120 (2019)
The electronic structure and the formation of polarons in Mo-doped BiVO4 measured by angle-resolved photoemission spectroscopyM. Kohamed, May, Matthias M.; Kanis, Michael; Bruetzam, Mario; Uecker, Reinhard; van de Krol, Roel; Janowitz, Christoph; Mulazzi, MattiaRSC Adv., 2019,9, 15606-15614
Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystalT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, SDDG06 (2019)
Synthesis and characterization of the novel antiferromagnet LaNiB3O7K. M. Powderly, ShuGuo, KarolineStolze, Elizabeth M.Carnicom, R.J.CavaJournal of solid state chemistry, Volume 272, April 2019, Pages 113-117
Decomposition of a Solid Solution of Interstitial Magnesium in SiliconV. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. AstrovSemiconductors, 2019, Vol. 53, pp. 296–297
Characterization of the Si:Se+ Spin-Photon InterfaceA. DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie SimmonsPhys. Rev. Applied 11, 044036
Cross sections and transition intensities of Tb3+ in KY(WO4)2M. Demesh, A. Mudryi, A. Pavlyuk, E. Castellano-Hernández, C. Kränkel, and N. KuleshovOSA Continuum Vol. 2, Issue 4, pp. 1378-1385 (2019)
Stabilization of sputtered AlN/sapphire templates during high temperature annealingS. Hagedorn, Walde, S.; Mogilatenko, A.; Weyers, M.; Cancellara, L.; Albrecht, M.; Jaeger, D.Journal of Crystal Growth, Volume 512, 15 April 2019, Pages 142-146
Simulation of grain evolution in solidification of silicon on meso-scopic scaleX. Qi, Lijun Liub, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Wolfram MillerComputational Materials Science 159 (2019) 432–439
Longitudinal phonon plasmon mode coupling in β-Ga2O3M. Schubert, A. Mock, R.Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. DarakchievaAppl. Phys. Lett. 114, 102102 (2019)
High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer sourceM. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. HübersAppl. Phys. Lett. 114, 092103 (2019);
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsM. wienold, Pavlov, S. G.; Abrosimov, N. V.; Huebers, H. -W.Appl. Phys. Lett. 114, 092103 (2019)
Static Dielectric Constant of ß-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)A. Fiedler, R. Schewski, Z. Galazka, and K. IrmscherECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)
A novel 3D printed radial collimator for x-ray diffraction S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4Review of Scientific Instruments 90, 035102 (2019)
Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin filmsJ. Boy, M. Handwerg, R.Ahrling , R. Mitdank, G. Wagner, Z. Galazka, S. F. FischerAPL Mater. 7, 022526 (2019)
The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M.KiesslingJournal of Crystal Growth 507 (2019) 299–306
ß-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert SchewskiRadiation Measurements 121 (2019) 49–53