Leibniz-Institut für Kristallzüchtung

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Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO₂M. J. Wahila, Paez, Galo; Singh, Christopher N.; Regoutz, Anna; Sallis, Shawn; Zuba, Mateusz J.; Rana, Jatinkumar; Tellekamp, M. Brooks; Boschker, Jos E.; Markurt, Toni; Swallow, Jack E. N.; Jones, Leanne A. H.; Veal, Tim D.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Sadowski, Jerzy T.; Prendergast, David; Lee, Wei-Cheng; Doolittle, W. Alan; Piper, Louis F. J.Physical Review Materials, Vol. 3, Iss. 7 — July 2019

Electrical properties of (100) β-Ga₂O₃ Schottky diodes with four different metalsK. Jiang, Luke A.M. Lyle, Elizabeth V. Favela, Diamond Moody, Tianxiang Lin, Kalyan K. Das, Andreas Popp, Zbigniew Galazka, Günter Wagner, and Lisa M. Porter2019 ECS Trans. 92 71

Photoelectron spectroscopic study on electronic state and electrical properties of SnO₂ single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, 080903 (2019)

Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growthM. Plate, Dadzis, Kaspars; Krauze, Armands; Menzel, Robert; Virbulis, JanisJournal of Crystal Growth ,Volume 521, 1 September 2019, Pages 46-49

Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron-based pump-probe experimentM. Sander, Bauer, Roman; Kabanova, Victoria; Levantino, Matteo; Wulff, Michael; Pfuetzenreuter, Daniel; Schwarzkopf, Jutta; Gaal, PeterJ. Synchrotron Rad. (2019). 26, 1253-1259

Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric K_xNa_1-xNbO₃ thin filmsL. v. Helden, Bogula, L.; Janolin, P. -E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.Appl. Phys. Lett. 114, 232905

DLTS Investigation of the Energy Spectrum of Si:Mg CrystalsN. Yarkin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. WeberSemiconductors, 2019, Vol. 53, No. 6, pp. 789–794

Role of hole confinement in the recombination properties of InGaN quantum structuresM. anikeeva, Albrech, M.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Cheze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.Scientific Reports volume 9, Article number: 9047 (2019)

Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched siliconM. Beck, N. V. Abrosimov, J. Hübner, M. OestreichPHYSICAL REVIEW B 99, 245201 (2019)

Features of the Formation of the BiBs Defect in SiL. I. Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolay Abrosimov, Helge RiemannPhys. Status Solidi A 2019, 216, 1900291

Ferroelectric Self-Poling in GeTe Films and CrystalsD. Kriegner, Springholz, Gunther; Richter, Carsten; Filet, Nicolas; Mueller, Elisabeth; Capron, Marie; Berger, Helmut; Holy, Vaclay; Dil, J. Hugo; Krempasky, JurajCrystals 2019, 9(7), 335

Vectorial observation of the spin Seebeck effect in epitaxial NiFe₂O₄ thin films with various magnetic anisotropy contributionsZ. Li, Jan Krieft, Amit Vikram Singh, Sudhir Regmi, Ankur Rastogi, Abhishek Srivastava, Zbigniew Galazka, Tim Mewes, Arunava Gupta, Timo KuschelAppl. Phys. Lett. 114, 232404 (2019)

Unusual Polarization Dependence of Dislocation-Related Luminescence in n-GaNO. Medvedev, M. Albrecht, O. VyvenkoPhys. Status Solidi A 2019, 216, 1900305

Float-Zone Growth of Silicon Crystals using Large-area Seeding R. Menzel, H.-J. Rost, F. M. Kießling, L. SyllaJournal of Crystal Growth, Volume 515, 1 June 2019, Pages 32-36

Advanced coherent X-ray diffraction and electron microscopy of individual InP nanocrystals on Si nanotips for III-V on Si electronics and optoelectronicsG. Niu, S. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E. H. Hussein, M. A. Schubert, P.Zaumseil, G. Capellini, W.Masselink, W. Ren, Z. Ye, M. Lehmann, T. Schülli, T. Schroeder and M. - I. RichardPhys. Rev. Applied 11, 064046 – 2019

Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluoridesP. G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. PotapovMaterials Science and Engineering: B Volume 244, May 2019, Pages 1-5

Dielectric, piezoelectric and elastic constants of Ca₃TaGa₃Si₂O₁₄ single crystals at elevated temperaturesY. Suhaka, Michal Schulza, Andrei Sotnikovb, Hagen Schmidtb, Steffen Ganschowc, Sergey Sakharovd, and Holger Fritzea Steffen Ganschowc, Sergey Sakharovd, and Holger FritzeaFerroelectrics, 8 537 (2018) 255–263

Thermodynamic Investigation of Ternary Delafossite CrystalsN. Wolff, Klimm, Detlef; Ganschow, Steffen; Siche, DietmarCrystal Research and Technology, Volume54, Issue7 July 2019, 1900036

Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum WellsM. H. Zoellner, Chahine, Gilbert Andre; Lahourcade, Lise; Mounir, Christian; Manganelli, Costanza Lucia; Schulli, Tobias Urs; Schwarz, Ulrich Theodor; Zeisel, Roland; Schroeder, ThomasACS Applied Materials & Interfaces , 2019, 11, 25, 22834–22839

Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in siliconR. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. ThewaltPhysical Review B 99, 195207 (2019)

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