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Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2M. J. Wahila, Paez, Galo; Singh, Christopher N.; Regoutz, Anna; Sallis, Shawn; Zuba, Mateusz J.; Rana, Jatinkumar; Tellekamp, M. Brooks; Boschker, Jos E.; Markurt, Toni; Swallow, Jack E. N.; Jones, Leanne A. H.; Veal, Tim D.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Sadowski, Jerzy T.; Prendergast, David; Lee, Wei-Cheng; Doolittle, W. Alan; Piper, Louis F. J.Physical Review Materials, Vol. 3, Iss. 7 — July 2019
Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metalsK. Jiang, Luke A.M. Lyle, Elizabeth V. Favela, Diamond Moody, Tianxiang Lin, Kalyan K. Das, Andreas Popp, Zbigniew Galazka, Günter Wagner, and Lisa M. Porter2019 ECS Trans. 92 71
Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, 080903 (2019)
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growthM. Plate, Dadzis, Kaspars; Krauze, Armands; Menzel, Robert; Virbulis, JanisJournal of Crystal Growth ,Volume 521, 1 September 2019, Pages 46-49
Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron-based pump-probe experimentM. Sander, Bauer, Roman; Kabanova, Victoria; Levantino, Matteo; Wulff, Michael; Pfuetzenreuter, Daniel; Schwarzkopf, Jutta; Gaal, PeterJ. Synchrotron Rad. (2019). 26, 1253-1259
Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1-xNbO3 thin filmsL. v. Helden, Bogula, L.; Janolin, P. -E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.Appl. Phys. Lett. 114, 232905
DLTS Investigation of the Energy Spectrum of Si:Mg CrystalsN. Yarkin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. WeberSemiconductors, 2019, Vol. 53, No. 6, pp. 789–794
Role of hole confinement in the recombination properties of InGaN quantum structuresM. anikeeva, Albrech, M.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Cheze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.Scientific Reports volume 9, Article number: 9047 (2019)
Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched siliconM. Beck, N. V. Abrosimov, J. Hübner, M. OestreichPHYSICAL REVIEW B 99, 245201 (2019)
Features of the Formation of the BiBs Defect in SiL. I. Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolay Abrosimov, Helge RiemannPhys. Status Solidi A 2019, 216, 1900291
Ferroelectric Self-Poling in GeTe Films and CrystalsD. Kriegner, Springholz, Gunther; Richter, Carsten; Filet, Nicolas; Mueller, Elisabeth; Capron, Marie; Berger, Helmut; Holy, Vaclay; Dil, J. Hugo; Krempasky, JurajCrystals 2019, 9(7), 335
Vectorial observation of the spin Seebeck effect in epitaxial NiFe2O4 thin films with various magnetic anisotropy contributionsZ. Li, Jan Krieft, Amit Vikram Singh, Sudhir Regmi, Ankur Rastogi, Abhishek Srivastava, Zbigniew Galazka, Tim Mewes, Arunava Gupta, Timo KuschelAppl. Phys. Lett. 114, 232404 (2019)
Unusual Polarization Dependence of Dislocation-Related Luminescence in n-GaNO. Medvedev, M. Albrecht, O. VyvenkoPhys. Status Solidi A 2019, 216, 1900305
Float-Zone Growth of Silicon Crystals using Large-area Seeding R. Menzel, H.-J. Rost, F. M. Kießling, L. SyllaJournal of Crystal Growth, Volume 515, 1 June 2019, Pages 32-36
Advanced coherent X-ray diffraction and electron microscopy of individual InP nanocrystals on Si nanotips for III-V on Si electronics and optoelectronicsG. Niu, S. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E. H. Hussein, M. A. Schubert, P.Zaumseil, G. Capellini, W.Masselink, W. Ren, Z. Ye, M. Lehmann, T. Schülli, T. Schroeder and M. - I. RichardPhys. Rev. Applied 11, 064046 – 2019
Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluoridesP. G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. PotapovMaterials Science and Engineering: B Volume 244, May 2019, Pages 1-5
Dielectric, piezoelectric and elastic constants of Ca3TaGa3Si2O14 single crystals at elevated temperaturesY. Suhaka, Michal Schulza, Andrei Sotnikovb, Hagen Schmidtb, Steffen Ganschowc, Sergey Sakharovd, and Holger Fritzea Steffen Ganschowc, Sergey Sakharovd, and Holger FritzeaFerroelectrics, 8 537 (2018) 255–263
Thermodynamic Investigation of Ternary Delafossite CrystalsN. Wolff, Klimm, Detlef; Ganschow, Steffen; Siche, DietmarCrystal Research and Technology, Volume54, Issue7 July 2019, 1900036
Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum WellsM. H. Zoellner, Chahine, Gilbert Andre; Lahourcade, Lise; Mounir, Christian; Manganelli, Costanza Lucia; Schulli, Tobias Urs; Schwarz, Ulrich Theodor; Zeisel, Roland; Schroeder, ThomasACS Applied Materials & Interfaces , 2019, 11, 25, 22834–22839
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in siliconR. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. ThewaltPhysical Review B 99, 195207 (2019)