Leibniz-Institut für Kristallzüchtung

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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703

Toward precise n-type doping control in MOVPE grown β-Ga₂O₃ thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-19

Toward Precise n-Type Doping Control in MOVPE-Grown beta-Ga2O_{3<7sub> Thin Films by Deep-Learning Approach}T. Chou, S. Bin Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. T. V. Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12 (2022) 8

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer J. A T. de Guzman, V. P. Markevich, I. D. Hawkins, J. Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, A. R. Peaker J. Appl. Phys. 130 (2021) 245703

Fabrication of chemically and structurally abrupt Eu _1−xLa_xO/SrO/Si interfaces and their analysis by STEM-EELSR. Held, J. A. Mundy, M. E. Holtz, D. Hodash, T. Mairoser, D. A. Muller, D. G. SchlomPhys. Rev. Mater. 5 (2022) 124419

Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa₂O₄(100) Single-CrystalsF. Reichmann, J. Dabrowski, A. P. Becker, W. M. Klesse, K. Irmscher, R. Schewski, Z. Galazka, M. Mulazzi Phys. Status Solidi B 259 (2021) 2100452

Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 121912

Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 114607

Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning TechniquesN. Dropka, K. Böttcher, and M. HolenaCrystals, 11, (2021), 1218

Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 155201

A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 125706

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 2100459

Phase diagram studies for the growth of (Mg,Zr):SrGa₁₂O₁₉ crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–7139

Czochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu₂O₃–Sc₂O₃–Y₂O₃C. Kränkel, A. Uvarova, É. Haurat, L. Hülshoff, M. Brützam, C. Guguschev, S. Kalusniak, and D. KlimmActa Cryst. B, 77, (2021), 23786-23798

Investigation on the optical nonlinearity of the layered magnesium-mediated metal organic framework (Mg-MOF-74)Y. Liang, W. Qiao, T. Feng, B. Zhang, Y. Zhao, Y. Song, T. Li, and C. KränkelOptics Express, 29, (2021), 23786-23798

Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning methodS. Kayser, N. Rotundo, N. Dropka, and P. FarrellJournal of Crystal Growth, 571, (2021), 126248

The Features of Infrared Absorption of Boron-Doped SiliconLyudmila Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolai Abrosimov, and Helge RiemannPhys. Status Solidi A, 218, (2021), 2100181

Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level TrapsJoyce Ann T. De Guzman, Vladimir P. Markevich, Ian D. Hawkins, Hussein M. Ayedh, José Coutinho, Jeff Binns, Robert Falster, Nikolay V. Abrosimov, Iain F. Crowe, Matthew P. Halsall, and Anthony R. PeakerPhys. Status Solidi A, 218, (2021), 2100108

Is Reduced Strontium Titanate a Semiconductor or a Metal?C. Rodenbücher, C. Guguschev, C. Korte, S. Bette, and K. SzotCrystals, 11, (2021), 744

Melt Growth and Physical Properties of Bulk LaInO₃ Single CrystalsZ. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M.Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, S. Bergmann, H. Cho, K. Char, T. Schroeder, M. BickermannPhys. Status Solidi A (2021), 2100016

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