Leibniz-Institut für Kristallzüchtung

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Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceC. Corley-Wiciak, C. Richter, M. H. Zoellner, I. Zaitsev, C. L. Manganelli, E. Zatterin, T. U. Schülli, A. A. Corley-Wiciak, J. Katzer, F. Reichmann, W. M. Klesse, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Virgilio and G. CapelliniAcs Applied Materials & Interfaces(2), (2023) 3119-3130

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga₂O₃ films for vertical device applicationT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, M. Pietsch, J. Rehm, T. T. V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler and A. PoppApplied Physics Letters(5), (2023)

The Thermal Conductivity Tensor of β-Ga₂O₃ from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2023) 2200204

Thermally activated increase of the average grain size as the origin of resistivity enhancement inNbO₂ films grown by pulsed-laser depositionN. Jaber, J. Feldl, J. Stoever, K. Irmscher, M. Albrecht, M. Ramsteiner and J. SchwarzkopfPhysical Review Materials(1), (2023)

Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquidA. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, N. V. Abrosimov; R. K. Zhukavin, V. N. Shastin Mater. Sci. Eng. B 286 (2022) 115979

Perspectives on MOVPE-grown (100) β-Ga₂O₃ thin films and its Al-alloy for power electronics applicationJ. Rehm, T.-S. Chou, S. Bin Anooz, P. Seyidov, A. Fiedler, Z. Galazka, A. Popp Appl. Phys. Lett. 121 (2022) 240503

Step pinning and hillock formation in (Al,Ga)N films on native AlN substratesT. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht J. Appl. Phys. 132 (2022) 223102

Thermal Activation of Valley-Orbit States of Neutral Magnesium in SiliconR.J.S. Abraham, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltSemiconductors 56 1 (2022) 59-62

Laser cooling in Yb:KY₃F₁₀: a comparison with Yb:YLFS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Express 30 (2022) 47235-47248

Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiationV.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, S.B. Lastovskii, G.A. Oganesyan, D.S. Poloskin, A.A. Aref’evPhysics of the Solid State 12 (2022) 1878

Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal growth F. Burkle, M. Forste, K. Dadzis, I. Tsiapkinis, O. Patzold, A. Charitos, M. Dues, J. Czarske, L. Buttner, Flow Meas. Instrum. 88 (2022) 102258

Smart Design of Cz-Ge Crystal Growth Furnace and ProcessN. Dropka, X. Tang, G. K. Chappa, M. HolenaCrystals 12 (2022) 1764

Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK.-P. Gradwohl, C.-H. Lu, Y. Liu, C. Richter, T. Boeck, J. Martin, M. AlbrechtPhys. Status Solidi RRL (2022) 2200398

The Thermal Conductivity Tensor of β-Ga₂O₃ from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2022) 2200204

Cobalt as a promising dopant for producing semi-insulating β-Ga₂O₃ crystals: Charge state transition levels from experiment and theoryP. Seyidov, J. B. Varley, Z. Galazka, T.-S. Chou, A. Popp, A. Fiedler, K. IrmscherAPL Mater. 10 (2022) 111109

Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect I. Gamov, J. L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M. R. Wagner, M. Bickermann Phys. Rev. B 106 (2022) 184110

Low temperature thermoluminescence of β-Ga₂O₃ scintillatorM. E. Witkowski, K. J. Drozdowski, M. Makowski, W. Drozdowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. GalazkaOptical Materials: X 16 (2022) 100210

Coherent control of electron spin qubits in silicon using a global fieldE. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt5, A. Laucht, A. S. Dzurak, J. J. Planpj Quantum Information 8 (2022) 126

Combination of ultrafast time-resolved spectroscopy techniques for the analysis of electron dynamics of heliumlike impurity centers in siliconN. Dessmann, S. G. Pavlov, A. Pohl, V. B. Shuman, L. M. Portsel , A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, B. Redlich, H.-W. HübersPHYSICAL REVIEW B 106 (2022) 195205

Epitaxial growth of the first two members of the Ba_n+1In_nO_{2.5 n+1} Ruddlesden–Popper homologous seriesF. V. E. Hensling, M. A. Smeaton, V. Show, K. Azizie, M. R. Barone, L. F. Kourkoutis, D. G. SchlomJ. Vac. Sci. Technol. A 40 (2022) 062707

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