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Growth and Properties of Intentionally Carbon-Doped GaN LayersE. Richter, Franziska C. Beyer, Friederike Zimmermann, Günter Gärtner, Klaus Irmscher, Ivan Gamov, Johannes Heitmann, Markus Weyers, and Günther TränkleCryst. Res. Technol. 2020, 55, 1900129
Semiconductor Crystal Growth under the Influence of Magnetic FieldsCh. Frank-Rotsch, Natasha Dropka, Frank-Michael Kießling, and Peter RudolphCryst. Res. Technol.
Thermoelastic properties of rare-earth scandates SmScO3, TbScO3 and DyScO3C. Hirschle, J. Schreuer,  S. Ganschow, and I. Schulze-JonackJournal of Applied Physics 126, 165103 (2019)
Ferroelectric Domain Walls in PbTiO3 Are Effective Regulators of Heat Flow at Room TemperatureE. Langenberg, Saha, Dipanjan; Holtz, Megan E.; Wang, Jian-Jun; Bugallo, David; Ferreiro-Vila, Elias; Paik, Hanjong; Hanke, Isabelle; Ganschow, Steffen; Muller, David A.; Chen, Long-Qing; Catalan, Gustau; Domingo, Neus; Malen, Jonathan; Schlom, Darrell G.; Rivadulla, FranciscoNano Lett. 2019, 19, 11, 7901–7907
Thin channel ß -Ga2O3 MOSFETs with self-aligned refractory metal gatesK. J. Liddy, Green, Andrew J.; Hendricks, Nolan S.; Heller, Eric R.; Moser, Neil A.; Leedy, Kevin D.; Popp, Andreas; Lindquist, Miles T.; Tetlak, Stephen E.; Wagner, Guenter; Chabak, Kelson D.; Jessen, Gregg H.Applied Physics Express, Volume 12, Number 12
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated EmissionV. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. HübersSemiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237
Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBEM. Siekacz, Wolny, Pawel; Ernst, Torsten; Grzanka, Ewa; Staszczak, Grzegorz; Suski, Tadeusz; Feduniewicz-Zmuda, Anna; Sawicka, Marta; Moneta, Joanna; Anikeeva, Mariia; Schulz, Tobias; Albrecht, Martin; Skierbiszewski, CzeslawSuperlattices and Microstructures Volume 133, September 2019, 106209
Lateral 1.8 kV β -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of MeritK. Tretzner, Eldad Bahat Treidel, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Günter Wagner, Andreas Thies, Karina Ickert, Hassan Gargouri, Joachim WürflIEEE Electron Device Letters ( Volume: 40, Issue: 9, Sept. 2019)
Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interfaceN. Thieme, M. Keil,D. Meier, P. Boenisch, K. Dadzis, O. Paetzold, M. Stelter, L. Buettner, J. CzarskeJournal of Crystal Growth, Volume 522, p. 221-229.
Polarity Tunable Trionic Electroluminescence in Monolayer WSe2J. Wang, Lin, Fanrong; Verzhbitskiy, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Martin, Jens; Eda, GoldNano Lett. 2019, 19, 10, 7470–7475
Transport Properties and Finite Size Effects in ß-Ga203 thin filmsJohannes Boy, Martin Handwerg, Olivio Chiatti, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, Saskia F. FischerScientific Reports volume 9, Article number: 13149 (2019)
Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline siliconL.-Ch. Chuang, Maeda,Kensaku; Morito, Haruhiko; Shiga, Keiji; Miller, Wolfram; Fujiwara, KozoMaterialia, Volume 7, September 2019, 100357
Fast forecasting of VGF crystal growth process by dynamic neural networksN. Dropka, Martin Holena, Stefan Ecklebe, Christiane Frank-Rotsch, Jan WinklerJournal of Crystal Growth
Deep-level noise characterization of MOVPE-grown ß-Ga2O3Ch. Golz, Galazka, Zbigniew; Popp, Andreas; Bin Anooz, Saud; Wagner, Guenter; Hatami, Fariba; Masselink, W. TedAppl. Phys. Lett. 115, 133504 (2019)
Selective etching of fs-laser inscribed high aspect ratio microstructures in YAGK. Hasse, G. Huber, and C. KränkelOptical Materials Express Vol. 9, Issue 9, pp. 3627-3637 (2019)
REScO3 Substrates-Purveyors of Strain EngineeringD. Klimm, Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.Crystal Research and Technology, Volume55, Issue2 Special Issue: The 50th Anniversary of the German Association for Crystal Growth (Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung, DGKK), February 2020, 1900111
Dynamics of crosshatch patterns in heteroepitaxyF. Rovaris, Zoellner, Marvin H.; Zaumseil, Peter; Marzegalli, Anna; Di Gaspare, Luciana; De Seta, Monica; Schroeder, Thomas; Storck, Peter; Schwalb, Georg; Capellini, Giovanni; Montalenti, FrancescoPHYSICAL REVIEW B, Vol. 100, Iss. 8 — 15 August 2019
Role of interface quality for the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic propertiesM. Althammer, Singh, Amit Vikram; Wimmer, Tobias; Galazka, Zbigniew; Huebl, Hans; Opel, Matthias; Gross, Rudolf; Gupta, ArunavaAppl. Phys. Lett. 115, 092403 (2019)
Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrateT. Kamikawa, Gandrothula, Srinivas; Araki, Masahiro; Li, Hongjian; Oliva, Valeria Bonito; Wu, Feng; Cohen, Daniel; Speck, James S.; Denbaars, Steven P.; Nakamura, ShujiOptic Express ,Vol. 27, Issue 17, pp. 24717-24723 (2019
Tailoring the scintillation properties of ß- Ga2O3M. Makowski, W. Drozdowski, M. E. Witkowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. Galazka Vol. 9, No. 9 / 1 September 2019 / Optical Materials Express 3738