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Two inch diameter, highly conducting bulk beta-Ga2O3 single crystals grown by the Czochralski method Z. Galazka, S. Ganschow, P. Seyidov, K. Irmscher, M. Pietsch, T. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann,D. Klimm, T. Straubinger, T. Schroeder, M. BickermannAppl. Phys. Lett. 120 (2022) 152101
Disentangling types of lattice disorder impactingsuperconductivity in Sr2RuO4 by quantitativelocal probesB. H. Goodge, H. P. Nair, D. J. Baek, N. J. Schreiber, L. Miao, J. P. Ruf, E. N. Waite, P. M. Carubia, K. M. Shen, D. G. Schlom, L. F. KourkoutisAPL Mater. 10 (2022) 041114
Biomolecular control over local gating in bilayer graphene induced by ferritinS. K. Karuppannan, J. Martin, W. Xu, R. R. Pasula, S. Lim, C. A. NijhuisiScience 25 (2022) 104128
Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry BreakingT. Liu, D. Xiang, H. Kuan Ng, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, and J. WuAdv. Sci, (2022), 2200816
FAIR data enabling new horizons for materials researchM. Scheffler, M. Aeschlimann, M.Albrecht, T. Bereau, H.-J. Bungartz, C. Felser, M. Greiner, A. Groß, C. Koch, K. Kremer, W. E. Nagel, M. Scheidgen, C. Wöll, and C. DraxlNature, 604, p. 635–642 (2022)
Metal-assisted chemically etched silicon nanopillars hosting telecom photon emittersM. Hollenbach, N. S. Jagtap, C. Fowley, et al.J. Appl. Phys. 132, 033101 (2022)
Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects V. Emtsev, N. Abrosimov, V. Kozlovski, S. Lastovskii, G. Oganesyan, D. PoloskinJ. Appl. Phys. 131 (2022) 125705
Revisiting the Growth of Large (Mg,Zr):SrGa12O19 Single Crystals: Core Formation and Its Impact on Structural Homogeneity Revealed by Correlative X-ray ImagingC. Guguschev, C. Richter, M. Brützam, K. Dadzis, C. Hirschle, T. M. Gesing, M. Schulze, A. Kwasniewski, J. Schreuer, D. G. SchlomCryst. Growth Des. 22 (2022) 2557−2568
Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowiresM. Hanke, C. Richter, F. Lange, Anna Reis, J. Parker, T. Boeck Appl. Phys. Lett. 120 (2022) 101902
Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4M. Hilfiker, E. Williams, U. Kilic, Y. Traouli, N. Koeppe, J. Rivera, A. Abakar, M. Stokey, R. Korlacki, Z. Galazka, K. Irmscher, M. Schubert Appl. Phys. Lett. 120 (2022) 132105
Molecular beam epitaxy of single-crystalline bixbyite (In1−xGax)2O3 films (x0.18): Structural properties and consequences of compositional inhomogeneityA. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, O. BierwagenPhys. Rev. Materials 6 (2022) 033604
Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin LimitC. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. MaxsonPhys. Rev. Lett. 128 (2022) 114801
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiCM. Schubert, S. Knight, S. Richter, P. Kühne, V. Stanishev, A. Ruder, M. Stokey, R. Korlacki, K. Irmscher, P. Neugebauer, V. DarakchievaAppl. Phys. Lett. 120 (2022) 102101
Canonical approach to cation flux calibration in oxide molecular-beam epitaxyJ. Sun, C. T. Parzyck, J. H. Lee, C. M. Brooks, L. F. Kourkoutis, X. Ke, R. Misra, J. Schubert, F. V. Hensling, M. R. Barone, Z. Wang, M. E. Holtz, N. J. Schreiber, Q. Song, H. Paik, T. Heeg, D. A. Muller, K. M. Shen, D. G. SchlomPhys. Rev. Mater. 6 (2022) 033802
SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodesK. Tetzner, K. Egbo, M. Klupsch, R.-S. Unger, A. Popp, T.-S. Chou, S. Bin Anooz, Z. Galazka, A. Trampert, O. Bierwagen, J. Würfl Appl. Phys. Lett. 120 (2022) 112110
Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed EpitaxyP. Vogt, F. V. E. Hensling, K. Azizie, J. P. McCandless, J. Park, K. DeLello, D. A. Muller, H. G. Xing, D. Jena, D. G. SchlomPhys. Rev. Applied 17 (2022) 034021
A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experimentW. Aggoune, A. Eljarrat, D. Nabok, K. Irmscher, M. Zupancic, Z. Galazka, M. Albrecht, C. Koch, C. Draxl Communication Materials 3 (2022) 12
Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3
On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774
Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705