Leibniz-Institut für Kristallzüchtung

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²⁸Silicon-on-insulator for optically interfaced quantum emittersY. Liu, S. Rinner, T. Remmele, O. Ernst, A. Reiserer, T. Boeck J. Cryst. Growth 593 (2022) 126733

Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry BreakingT. Liu, D. Xiang, H. Kuan Ng, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, and J. WuAdv. Sci, (2022), 2200816

FAIR data enabling new horizons for materials researchM. Scheffler, M. Aeschlimann, M.Albrecht, T. Bereau, H.-J. Bungartz, C. Felser, M. Greiner, A. Groß, C. Koch, K. Kremer, W. E. Nagel, M. Scheidgen, C. Wöll, and C. DraxlNature, 604, p. 635–642 (2022)

Metal-assisted chemically etched silicon nanopillars hosting telecom photon emittersM. Hollenbach, N. S. Jagtap, C. Fowley, et al.J. Appl. Phys. 132, 033101 (2022)

Two inch diameter, highly conducting bulk beta-Ga₂O₃ single crystals grown by the Czochralski method Z. Galazka, S. Ganschow, P. Seyidov, K. Irmscher, M. Pietsch, T. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann,D. Klimm, T. Straubinger, T. Schroeder, M. BickermannAppl. Phys. Lett. 120 (2022) 152101

Disentangling types of lattice disorder impactingsuperconductivity in Sr₂RuO₄ by quantitativelocal probesB. H. Goodge, H. P. Nair, D. J. Baek, N. J. Schreiber, L. Miao, J. P. Ruf, E. N. Waite, P. M. Carubia, K. M. Shen, D. G. Schlom, L. F. KourkoutisAPL Mater. 10 (2022) 041114

Biomolecular control over local gating in bilayer graphene induced by ferritinS. K. Karuppannan, J. Martin, W. Xu, R. R. Pasula, S. Lim, C. A. NijhuisiScience 25 (2022) 104128

Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3

On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705

Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials researchO.C. Ernst, Y. Liu and T. BoeckZ. Kristallogr. (2022)

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects V. Emtsev, N. Abrosimov, V. Kozlovski, S. Lastovskii, G. Oganesyan, D. PoloskinJ. Appl. Phys. 131 (2022) 125705

Revisiting the Growth of Large (Mg,Zr):SrGa₁₂O₁₉ Single Crystals: Core Formation and Its Impact on Structural Homogeneity Revealed by Correlative X-ray ImagingC. Guguschev, C. Richter, M. Brützam, K. Dadzis, C. Hirschle, T. M. Gesing, M. Schulze, A. Kwasniewski, J. Schreuer, D. G. SchlomCryst. Growth Des. 22 (2022) 2557−2568

Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowiresM. Hanke, C. Richter, F. Lange, Anna Reis, J. Parker, T. Boeck Appl. Phys. Lett. 120 (2022) 101902

Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄M. Hilfiker, E. Williams, U. Kilic, Y. Traouli, N. Koeppe, J. Rivera, A. Abakar, M. Stokey, R. Korlacki, Z. Galazka, K. Irmscher, M. Schubert Appl. Phys. Lett. 120 (2022) 132105

Molecular beam epitaxy of single-crystalline bixbyite (In_1−xGa_x)₂O₃ films (x≤0.18): Structural properties and consequences of compositional inhomogeneityA. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, O. BierwagenPhys. Rev. Materials 6 (2022) 033604

Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin LimitC. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. MaxsonPhys. Rev. Lett. 128 (2022) 114801

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiCM. Schubert, S. Knight, S. Richter, P. Kühne, V. Stanishev, A. Ruder, M. Stokey, R. Korlacki, K. Irmscher, P. Neugebauer, V. DarakchievaAppl. Phys. Lett. 120 (2022) 102101

Canonical approach to cation flux calibration in oxide molecular-beam epitaxyJ. Sun, C. T. Parzyck, J. H. Lee, C. M. Brooks, L. F. Kourkoutis, X. Ke, R. Misra, J. Schubert, F. V. Hensling, M. R. Barone, Z. Wang, M. E. Holtz, N. J. Schreiber, Q. Song, H. Paik, T. Heeg, D. A. Muller, K. M. Shen, D. G. SchlomPhys. Rev. Mater. 6 (2022) 033802

SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p–n diodesK. Tetzner, K. Egbo, M. Klupsch, R.-S. Unger, A. Popp, T.-S. Chou, S. Bin Anooz, Z. Galazka, A. Trampert, O. Bierwagen, J. Würfl Appl. Phys. Lett. 120 (2022) 112110

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