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Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing StudiesV. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. PoloskinSemiconductors 54 (2020)4 6–54
The natural critical current density limit for Li7La3Zr2O12 garnetsF. Flatscher, Martin Philipp, Steffen Ganschow, H. Martin R. Wilkening and Daniel RettenwanderJ. Mater. Chem. A 8 (2020) 15782-15788
Bulk β-Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiationZ. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schroeder, M. BickermannJournal of Alloys and Compounds 818 (2020) 152842
Charge disproportionate molecular redox for discrete memristive and memcapacitive switchingS. Goswami, Santi P. Rath, Damien Thompson, Svante Hedström, Meenakshi Annamalai, Rajib Pramanick, B. Robert Ilic, Soumya Sarkar, Sonu Hooda, Christian A. Nijhuis, Jens Martin, R. Stanley Williams, Sreebrata Goswami & T. Venkatesan Nature Nanotechnology 15 (2020)380–389
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SxGe1-x Quantum DotA. Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. SchreiberPhys. Rev. Applied 13 (2020) 034068
Technology development of high purity germanium crystals for radiation detectorsN. Abrosimov, M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicskó-Csáthy, U. Juda, S. Kayser, W. Miller, M. Pietsch, F. M. KießlingJournal of Crystal Growth 532, (2020) 125396
Favourable growth conditions for the preparation of bulk AlN single crystals by PVTC. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. StraubingerCrystEngComm. 22 (2020) 1762-1768
Elastic properties of single crystal Bi12SiO20 as a function of pressure and temperature and acoustic attenuation effects in Bi12MO20 (M = Si, Ge and Ti)E. Haussühl, Hans Josef Reichmann, Jürgen Schreuer, Alexandra Friedrich, Christian Hirschle , Lkhamsuren Bayarjargal, Björn Winkler, Igor Alencar, Leonore Wiehl, Steffen GanschowMater. Res. Express 7 (2020) 025701
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAMS. Roy, Gang Niu, Qiang Wang, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Peng Shi, Sannian Song, Zhitang Song, Zuo-Guang Ye, Christian Wenger, Thomas Schroeder, Ya-Hong Xie, Xiangjian Meng, Wenbo Luo, and Wei RenACS Appl. Mater. Interfaces, ACS Appl. Mater. Interfaces 12 (2020) 10648–10656
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxyS. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P. A. Shields, M. Kneissl, M. WeyersJournal of Crystal Growth 531 (2020) 125343
Ti- and Fe-related charge transition levels in β−Ga2O3Ch. Zimmermann, Ymir Kalmann Frodason , Abraham Willem Barnard, Joel Basile Varley , Klaus Irmscher , Zbigniew Galazka , Antti Karjalainen , Walter Ernst Meyer , Francois Danie Auret, and Lasse VinesAppl. Phys. Lett., 116, (2020), 072101
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306
Diode‐Pumped Laser Operation of Tb3+:LiLuF4 in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 1900229
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 125297
Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 53 (2020) 880-884
Sensitization of SnO2 Single Crystals with Multidentate-Ligand- Capped PbS Colloid Quantum Dots to Enhance the Photocurrent StabilityG. Li, Qian Yang,Lenore Kubie, Joshua T. Stecher, Zbigniew Galazka, Reinhard Uecker, and Bruce A. ParkinsonChemNanoMat 6 (2020) 461-469
Substrate-orientation dependence of ß-Ga2O3 (100), (010), (001), and (201) homoepitaxy by indium-mediated metalexchange catalyzed molecular beam epitaxy (MEXCAT-MBE)P. Mazzolini, A. Falkenstein , C. Wouters , R. Schewski , T. Markurt, Z. Galazka , M. Martin , M. Albrecht , and O. BierwagenAPL Materials 8 (2020) 011107
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressureN. V. Morozov, Igor V. Korobeinikov, Nikolay V. Abrosimov, and Sergey V. OvsyannikovCrystEngComm 22 (2020) 5416
Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701
Local Electronic Structure in AlN Studied by Single-Crystal 27Al and 14N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469