Leibniz-Institut für Kristallzüchtung

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Charge state transition levels of Ni in β-Ga₂O₃ crystals from experiment and theory: An attractive candidate for compensation dopingP. Seyidov, J. B. Varley, J. X. Shen, Z. Galazka, T. S. Chou, A. Popp, M. Albrecht, K. Irmscher and A. FiedlerJournal of Applied Physics(20), (2023)

Comprehensive study of the interstitial hydrogen donor in SnO2F. Herklotz, E. Lavrov, V. V. Melnikov, Z. Galazka and V. F. AgekyanPhysical Review B(20), (2023)

Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill-Posed Inverse Problems using Images and Numerical DataN. Dropka, M. Holena, C. Thieme and T. S. ChouCrystal Research and Technology(11), (2023)

Electronic Synapses Enabled by an Epitaxial SrTiO_3-δ / Hf_0.5Z_r0.5O₂ Ferroelectric Field-Effect Memristor Integrated on SiliconN. Siannas, C. Zacharaki, P. Tsipas, D. J. Kim, W. Hamouda, C. Istrate, L. Pintilie, M. Schmidbauer, C. Dubourdieu and A. DimoulasAdvanced Functional Materials2023)

Enhanced T_C in SrRuO₃/DyScO₃(110) thin films with high residual resistivity ratioN. J. Schreiber, L. Miao, H. P. Nair, J. P. Ruf, L. Bhatt, Y. A. Birkholzer, G. N. Kotsonis, L. F. Kourkoutis, K. M. Shen and D. G. SchlomApl Materials(11), (2023)

Exploring miscut angle influence on (100) β-Ga₂O₃ homoepitaxial films growth: Comparing MOVPE growth with MBE approachesT. S. Chou, J. Rehm, S. Bin Anooz, O. Ernst, A. Akhtar, Z. Galazka, W. Miller, M. Albrecht, P. Seyidov, A. Fiedler and A. PoppJournal of Applied Physics(19), (2023)

Growth of β-Ga₂O₃ and (sic)/κ-Ga₂O₃ on AlN(0001) by molecular-beam epitaxyS. Raghuvansy, J. P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, M. S. Williams, C. Tessarek, S. Figge, K. Nomoto, H. G. Xing, D. G. Schlom, A. Rosenauer, D. Jena, M. Eickhoff and P. VogtApl Materials(11), (2023)

Parametric numerical study of dislocation density distribution in Czochralski-grown germanium crystalsA. Sabanskis, K. Dadzis, K. P. Gradwohl, A. Wintzer, W. Miller, U. Juda, R. R. Sumathi and J. VirbulisJournal of Crystal Growth(2023)

Scintillation and radioluminescence mechanism in β-Ga2O3 semiconducting single crystalsA. J. Wojtowicz, M. E. Witkowski, W. Drozdowski, M. Makowski and Z. GalazkaHeliyon(11), (2023)

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga₂O₃ CrystalsP. Seyidov, J. B. Varley, Y. K. Frodason, D. Klimm, L. Vines, Z. Galazka, T. S. Chou, A. Popp, K. Irmscher and A. FiedlerAdvanced Electronic Materials2023)

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips waferA. Kamath, O. Skibitzki, D. Spirito, S. Dadgostar, I. M. Martinez, M. Schmidbauer, C. Richter, A. Kwasniewski, J. Serrano, J. Jimenez, C. Golz, M. A. Schubert, J. W. Tomm, G. Niu, F. Hatami Phys. Rev. Mat. 7, 103801 (2023)

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)W. Miller, A. Sabanskis, A. Gybin, K. P. Gradwohl, A. Wintzer, K. Dadzis, J. Virbulis and R. SumathiCrystals(10), (2023)

A Guideline to Mitigate Interfacial Degradation Processes in Solid-State Batteries Caused by Cross DiffusionM. M. U. Din, L. Ladenstein, J. Ring, D. Knez, S. Smetaczek, M. Kubicek, M. Sadeqi-Moqadam, S. Ganschow, E. Salagre, E. G. Michel, S. Lode, G. Kothleitner, I. Dugulan, J. G. Smith, A. Limbeck, J. Fleig, D. J. Siegel, G. J. Redhammer and D. RettenwanderAdvanced Functional Materials(42), (2023)

Atomically smooth films of CsSb: A chemically robust visible light photocathodeC. T. Parzyck, C. A. Pennington, W. J. I. DeBenedetti, J. Balajka, E. M. Echeverria, H. Paik, L. Moreschini, B. D. Faeth, C. Hu, J. K. Nangoi, V. Anil, T. A. Arias, M. A. Hines, D. G. Schlom, A. Galdi, K. M. Shen and J. M. MaxsonApl Materials(10), (2023)

Electrical properties and temperature stability of Li-deficient and near stoichiometric Li(Nb,Ta)O3 solid solutions up to 900 °CS. Hurskyy, U. Yakhnevych, C. Kofahl, E. Tichy-Racs, H. Schmidt, S. Ganschow, H. Fritze and Y. SuhakSolid State Ionics(2023)

Quantitative Ultrafast Magnetoacoustics at Magnetic MetasurfacesA. Alekhin, A. M. Lomonosov, N. Leo, M. Ludwig, V. S. Vlasov, L. Kotov, A. Leitenstorfer, P. Gaal, P. Vavassori and V. TemnovNano Letters(20), (2023) 9295-9302

Reconciling the theoretical and experimental electronic structure of NbO2S. Berman, A. Zhussupbekova, J. E. Boschker, J. Schwarzkopf, D. D. O'Regan, I. Shvets and K. ZhussupbekovPhysical Review B(15), (2023)

Remote epitaxial interaction through grapheneC. S. Chang, K. S. Kim, B. I. Park, J. Choi, H. Kim, J. Jeong, M. Barone, N. Parker, S. Lee, X. Zhang, K. Lu, J. M. Suh, J. Kim, D. Lee, N. M. Han, M. Moon, Y. S. Lee, D. H. Kim, D. G. Schlom, Y. J. Hong and J. KimScience Advances(42), (2023)

Solubility of Magnesium in SiliconV. B. Shuman, A. A. Lavrentiev, A. A. Yakovleva, N. V. Abrosimov, A. N. Lodygin, L. M. Portsel and Y. A. AstrovSemiconductors(10), (2023) 465-468

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