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Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowthA. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann, M. WeyersJournal of Crystal Growth 462 (2017) 18–23
Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlatticesJ. Momand, R. Wang, J. E. Boschker, M. A. Verheijen, R. Calarco, B. J. KooiNanoscale; 9 (2017) 8774
A photonic platform for donor spin qubits in siliconK.J. Morse, Rohan J. S. Abraham,Adam DeAbreu,Camille Bowness,Timothy S. Richards, H. Riemann, N. Abrosimov, P. Becker, H.-J. Pohl, M. Thewalt, S. SimmonsScience Advances Science Advances 26 Jul 2017: Vol. 3, no. 7, e1700930
Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, T. ChikyowApplied Physics Express, 10 (2017) 011102 (1-4)
Growth of Ga2O3 for Power Device ProductionS. Okur, Gary S. Tompa, Nick Sbrockey, Tom Salagaj, Structured Materials Industries, Inc.; Volker Blank, Bernd Henninger, LayTec; Michele Baldini, Günter Wagner, Zbigniew Galazka, IKZ, Yao Yao, Johanne Rokolt, Robert F. Davids, Lisa M. Porter, Carnegie Mellon University, Abraham Belkind & Assiciates LLCProject: MOCVD growth of Ga2O3 for electronic and optoelectronic devices
Polarization of the Induced THz Emission of Donors in SiliconK. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin Semiconduct 50 (2016) 1673 - 1677
Electronic absorption of interstitial boron-related defects in siliconL.I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. RiemannPhys. Status Solidi A 214 (2017) 1700245
Crystal growth and characterization of the pyrochlore Tb2Ti2O7D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. BickermannCrystEngComm 19 (2017) 3908 - 3914
Thermodynamic and Kinetic Aspects of Crystal Growth D. Klimm, in: Handbook of Solid State Chemistry
Effect of Irradiation with 15-MeV Protons on the Compensation of Ge〈(Sb) ConductivityV. V. Kozlovski, A. E. Vasil’ev, V. V. Emtsev, G. A. Oganesyan, N. V. AbrosimovJournal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 11 (2017) 601 - 605
Oxygen Vacancies in Fast Lithium-Ion Conducting GarnetsM. Kubicek, A. Wachter-Welzl, D. Rettenwander, R. Wagner, G. Amthauer, H. Hutter, J. FleigChem. Mater., (2017) 7189-7196
Extreme ultraviolet light source at megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillatorF. Labaye, M. Gaponenko, V. J. Wittwer, A. Diebold, C. Paradis, N. Modsching, L. Merceron, F. Emaury, I. J. Graumann, C. R. Phillips, C. J. Saraceno, C. Kränkel, U. Keller, and T. SüdmeyerOptics Letters Vol. 42, Issue 24, pp. 5170-5173 (2017)
Activation energies of the InSi-Sii, defect transitions obtained by carrier lifetime measurementsK. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. AbrosimovPhys. Status Solidi C 14 (2017) 1600033
MOVPE growth of violet GaN LEDs on ß-Ga2O3 substratesD. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, G. TränkleJournal of Crystal Growth, 478 (2017) 212 - 215
Luminescent properties of GaAsBi/GaAs double quantum well heterostructuresY. I. Mazur, V.G. Dorogana, L. Diasa, D. Fanc, M. Schmidbauer, M.E. Warea, Z. Ya. Zhuchenkoe, S. S. Kurlove, G. G. Tarasove, S.-Q. Yuc, G. E. marques, G. J. SalamoaJournal of Luminescence 188 (2017) 209–216
Deep carrier traps in as grown isotopically pure 28Si FZ crystalT. Mchedlidze, J. Weber, N. V. Abrosimov, H. RiemannActa Mater.,140 (2017) 411 - 416
Design of model experiments for melt flow and solidification in a square container under time-dependent mmagnetic fieldsD. Meier, G. Lukina, N. Thieme, P. Bönisch, K. Dadzisc, L. Büttnerb, O. Pätzolda, J. Czarskeb, M. StelteraJournal of Crystal Growth 461 (2017) 30–37
Crystal diameter stabilization during growth of Si from agranulate crucibleR. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemannin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 220
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxyA. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, K. IrmscherJournal of Applied Physics, 122 (2017) 165701/1 - 165701/7