Leibniz-Institut für Kristallzüchtung

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Micro structures in the grain evolution during solidification of silicon: Phase field calculationsW. Miller, A. PopescuActa Mater. 140 (2017) 1 - 9

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowthA. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann, M. WeyersJournal of Crystal Growth 462 (2017) 18–23

Dynamic reconfiguration of van der Waals gaps within GeTe–Sb₂Te₃ based superlatticesJ. Momand, R. Wang, J. E. Boschker, M. A. Verheijen, R. Calarco, B. J. KooiNanoscale; 9 (2017) 8774

A photonic platform for donor spin qubits in siliconK.J. Morse, Rohan J. S. Abraham,Adam DeAbreu,Camille Bowness,Timothy S. Richards, H. Riemann, N. Abrosimov, P. Becker, H.-J. Pohl, M. Thewalt, S. SimmonsScience Advances Science Advances 26 Jul 2017: Vol. 3, no. 7, e1700930

Photoelectron spectroscopic study of electronic state and surface structure of In₂O₃ single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, T. ChikyowApplied Physics Express, 10 (2017) 011102 (1-4)

Growth of Ga₂O₃ for Power Device ProductionS. Okur, Gary S. Tompa, Nick Sbrockey, Tom Salagaj, Structured Materials Industries, Inc.; Volker Blank, Bernd Henninger, LayTec; Michele Baldini, Günter Wagner, Zbigniew Galazka, IKZ, Yao Yao, Johanne Rokolt, Robert F. Davids, Lisa M. Porter, Carnegie Mellon University, Abraham Belkind & Assiciates LLCProject: MOCVD growth of Ga2O3 for electronic and optoelectronic devices

Polarization of the Induced THz Emission of Donors in SiliconK. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin Semiconduct 50 (2016) 1673 - 1677

Electronic absorption of interstitial boron-related defects in siliconL.I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. RiemannPhys. Status Solidi A 214 (2017) 1700245

Crystal growth and characterization of the pyrochlore Tb₂Ti₂O₇D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. BickermannCrystEngComm 19 (2017) 3908 - 3914

Thermodynamic and Kinetic Aspects of Crystal Growth D. Klimm, in: Handbook of Solid State Chemistry

Effect of Irradiation with 15-MeV Protons on the Compensation of Ge〈(Sb) ConductivityV. V. Kozlovski, A. E. Vasil’ev, V. V. Emtsev, G. A. Oganesyan, N. V. AbrosimovJournal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 11 (2017) 601 - 605

Oxygen Vacancies in Fast Lithium-Ion Conducting GarnetsM. Kubicek, A. Wachter-Welzl, D. Rettenwander, R. Wagner, G. Amthauer, H. Hutter, J. FleigChem. Mater., (2017) 7189-7196

Extreme ultraviolet light source at megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillatorF. Labaye, M. Gaponenko, V. J. Wittwer, A. Diebold, C. Paradis, N. Modsching, L. Merceron, F. Emaury, I. J. Graumann, C. R. Phillips, C. J. Saraceno, C. Kränkel, U. Keller, and T. SüdmeyerOptics Letters Vol. 42, Issue 24, pp. 5170-5173 (2017)

Activation energies of the InSi-Sii, defect transitions obtained by carrier lifetime measurementsK. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. AbrosimovPhys. Status Solidi C 14 (2017) 1600033

MOVPE growth of violet GaN LEDs on ß-Ga₂O₃ substratesD. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, G. TränkleJournal of Crystal Growth, 478 (2017) 212 - 215

Luminescent properties of GaAsBi/GaAs double quantum well heterostructuresY. I. Mazur, V.G. Dorogana, L. Diasa, D. Fanc, M. Schmidbauer, M.E. Warea, Z. Ya. Zhuchenkoe, S. S. Kurlove, G. G. Tarasove, S.-Q. Yuc, G. E. marques, G. J. SalamoaJournal of Luminescence 188 (2017) 209–216

Deep carrier traps in as grown isotopically pure ²⁸Si FZ crystalT. Mchedlidze, J. Weber, N. V. Abrosimov, H. RiemannActa Mater.,140 (2017) 411 - 416

Design of model experiments for melt flow and solidification in a square container under time-dependent mmagnetic fieldsD. Meier, G. Lukina, N. Thieme, P. Bönisch, K. Dadzisc, L. Büttnerb, O. Pätzolda, J. Czarskeb, M. StelteraJournal of Crystal Growth 461 (2017) 30–37

Crystal diameter stabilization during growth of Si from agranulate crucibleR. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemannin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 220

Influence of incoherent twin boundaries on the electrical properties of β-Ga₂O₃ layers homoepitaxially grown by metal-organic vapor phase epitaxyA. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, K. IrmscherJournal of Applied Physics, 122 (2017) 165701/1 - 165701/7

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