Computational Simulations of the Lateral-Photovoltage-Scanning-MethodS. Kayser, A. Lüdge, K. BöttcherVIII International Scientific Colloquium Modelling for Materials Processing Riga, September 21 - 22, 201705-2017
Dynamics of non-equilibrium charge carriers in p-germanium doped by galliumN. Deßmann, S. G. Pavlov, V. V. Tsyplenkov, E. E. Orlova, A. Pohl, V. N. Shastin, R. Kh. Zhukavin, S. Winner, M. Mittendorff, J. M. Klopf, N. V. Abrosimov, H. Schneider, H.-W. HübersPhys. Status Solidi B 254 (2017) 160080304-2017
TMF optimization in VGF crystal growth of GaAs by artificial neural networks and Gaussian process modelsN. Dropka, M. Holena, Ch. Frank-Rotschin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 203 - 20804-2017
Growth of Silicon on Reorganized Porous Silicon substrates by steady-state solution growth for Photovoltaic ApplicationsC. Ehlers, R. Bansen, D. Uebel, T. Teubner, T. Boeck33rd European Photovoltaic Solar Energy Conference and Exhibition04-2017
Solution growth of Si on reorganized porous Si foils and on glass substratesC. Ehlers, R. Bansen, T. Markurt, D. Uebel, Th. Teubner, T. BoeckJ. Cryst. Growth 468 (2017) 268 – 27104-2017
In-Ga precursor islands for Cu(In,Ga)Se2 micro-concentrator solar cellsK. Eylers, F. Ringleb, B. Heidmann, S. Levcenco, Th. Unold, H.W. Klemm, G. Peschel, A. Fuhrich, Th. Teubner, Th. Schmidt, M. Schmid, T. BoeckProceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC), Washington, DC, USA04-2017
Passively Q-switched Ho,Pr:LiLuF4 laser with graphitic carbon nitride nanosheet filmM. Q. Fan, T. Li, G. Q. Li, S. Z. Zhao, K. J. Yang, S. Y. Zhang, B. T. Zhang, J. Q. Xu, and C. KränkelOptics Express Vol. 25, Issue 11, pp. 12796-12803 (2017)04-2017
Production of germanium stable isotopes single crystalsM. F. Churbanov, V. A. Gavva, A. D. Bulanov, N. V. Abrosimov, E. A. Kozyrev, I. A. Andryushchenko, V. A. Lipskii, S. A. Adamchik, O. Yu. Troshin, A. Yu. Lashkov, A. V. GusevCryst. Res. Technol. 52 (2017) 170002603-2017
Validation, verification, and benchmarking of crystal growth simulationsK. Dadzis, P. Bönisch, L. Sylla, T. RichterJournal of Crytal Growth Volume 474, 2017, Pages 171-17703-2017
High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth MethodMenzel, M. Ziem, T. Turschner, H. Riemann, N.V. AbrosimovVIII International Scientific Colloquium Modelling for Materials Processing Riga 201703-2017
Passively Q-switched Pr:YLF laser with a Co2+:MgAl2O4 saturable absorberM. Demesh, D. Marzahl, A. Yasukevich, V. Kisel, G. Huber, N. Kuleshov, C. KränkelOptics Letters Vol. 42, Issue 22, pp. 4687-4690 (2017)03-2017
Combined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3B. Cai, J. Schwarzkopf, C. Feldt, J. Sellmann, T. Markurt, R. WördenweberPhysical Review B, 95 (2017) 184108-1 02-2017
Hybrid single longitudinal mode Yb:YAG waveguide laser with 1.6 W output powerT. Calmano, M. Ams, P. Dekker, M. J. Withford, and C. Kränkel Optics Mat. Express Vol. 7, Issue 8, pp. 2777-2782 (2017)02-2017
Local Ion Dynamics in Polycrystalline ß-LiGaO2: A Solid-State NMR Study C. V. Chandran, K. Volgmann, S. Nakhal, R. Uecker, E. Witt, M. Lerch, P. HeitjansZ. Phys. Chem. 231 (2017) 1443 - 145302-2017
A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constantN. Abrosimov, D. G. Aref’ev, P. Becker, H. Bettin, A. D. Bulanov, M. F. Churbanov, S. V. Filimonov, V. A. Gavva, O. N. Godisov, A. V. Gusev, T. V. Kotereva, D. Nietzold, M. Peters, A. M. Potapov, H.-J. Pohl, A. Pramann, H. Riemann, P.-T. Scheel, R. Stosch, S. Wundrack, S. ZakelMetrologia 54 (2017) 599 – 609&01-2017
Solidification of NaCl–LiF–CaF2 ternary compositesM. F. Acosta ,Rosa I. Merino, Steffen Ganschow, and Detlef KlimmJ Mater Sci (2017) 52:5520–553001-2017
Production of precursors for micro-concentrator solar cells by femtosecond laser-induced forward transferS. Andree, B. Heidmann, F. Ringleb, K. Eylers,J. Bonse, Torsten Boeck, M. Schmid, J. KrügerAppl. Phys. A (2017) 123:67001-2017
Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protonsN. Arutyunov, V. Emtsev, M. Elsayed, R. Krause-Rehberg, N. Abrosimov, G. Oganesyan, V. KozlovskiPhys. Status Solidi C 14 (2017) 170012001-2017
Diffusion doping of silicon with magnesiumY. A. Astrov, V. B. Shuman, L. М. Portsel, А. N. Lodygin, S. G. Pavlov, N. V. Abrosimov, V. N. Shastin, H.-W. HübersPhys. Status Solidi A 214 (2017) 170019201-2017