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Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3
On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774
Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705
Mid-infrared emission properties of the Tm3+-doped sesquioxide crystals Y2O3, Lu2O3, Sc2O3 and mixed compounds (Y,Lu,Sc)2O3 around 1.5-, 2- and 2.3-µmR. Moncorgé, Y. Guyot, C. Kränkel, K. Lebbou, and A. YoshikawaJournal of Luminescence 241, (2022), 118537
Interface Shape under the Insulating Baffle in Vertical Bridgman SystemsN. Dropka, and Aleksandar G. OstrogorskyCryst. Res. Technol. (2022), 2100251
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride LayersL. Matiwe, C. Hartmann, L.Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, and T. StraubingerPhys. Status Solidi A (2022), 2100707
Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, and T. BoeckLangmuir, 38, (2022), 762−768
Solid-state laser cooling in Yb:CaF2 and Yb:SrF2 by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, and H. TanakaOptics Letters, 47, (2022), 2
Spectroscopic properties of Tb3+ as an ion for visible lasersS. Kalusniak, E. Castellano-Hernández, H. Yalçinoğlu. H. Tanaka, and C. KränkelAppl. Phys. B 128, (2022), 33
Controllable single- and dual-channel graphene-Q-switched operation in a beam-splitter-type Yb:YAG channel waveguideJ. E. Bae, T. Calmano, C. Kränkel, and F. RotermundLas. Phot. Rev., (2022), 202100501
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703
Toward precise n-type doping control in MOVPE grown β-Ga2O3 thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-19
Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 121912
Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 114607
Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 155201
A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 125706
Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 2100459
Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–7139