Publikationen

PublikationVeröffentlichungDatum
Kerr-lens mode-locked Tm solid state laser with spectral broadening effectM. Tokurakawa,A. Suzuki, and C. KränkelRev. Las. Eng. 49, (2021), 385-38901-2021
Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone methodH. J. Rost, I.Buchovska, K.Dadzis, U.Juda, M.Renner, R.MenzelJournal of Crystal Growth 552 (2020) 12584212-2020
Temperature Dependence of Three-Dimensional Domain Wall Arrangement in Ferroelectric K0.9Na0.1NbO3 Epitaxial Thin FilmsM. Schmidbauer, L. Bogula, B. Wang, M. Hanke, L. von Helden, A. Ladera, J.-J. Wang, L.-Q. Chen, and J. SchwarzkopfJ. Appl. Phys. 128, (2020), 18410111-2020
Ferroelectric phase transitions in multi-domain K0.9Na0.1NbO3 epitaxial thin filmsL. Bogula, Leonard von Helden, Carsten Richter, Michael Hanke, Jutta Schwarzkopf and Martin SchmidbauerNano Futures 4 (2020) 03500511-2020
Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single CrystalsK. Böttcher, Wolfram Miller, Steffen GanschowCryst. Res. Technol. 56 (2020) 200010611-2020
Thermoelastic anisotropy in NdScO3 and NdGaO3 perovskitesC. Hirschle, J. Schreuer, S. Ganschow, L. PetersMaterials Chemistry and Physics 254 (2020) 12352811-2020
UV-pumped visible Tb3+-lasersS. Kalusniak, H. Tanaka, E. Castellano-Hernandez, AND C. KrankelOptics Letters 45 (22) (2020) 6170-617311-2020
Raman scattering in heavily donor doped β- Ga2O3A. Fiedler, M. Ramsteiner, Z. Galazka, and K. IrmscherAppl. Phys. Lett. 117 (2020) 152107 10-2020
Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning PhotoluminescenceI. Buchovska, Anke Lüdge, Wolfgang Lüdge, and Frank M. KiesslingECS Journal of Solid State Science and Technology 9 (2020) 08600109-2020
Extraction of Classification Rules from Sequences of Crystal Growth DataR. Busa, Y. Dauxais, S. Ecklebe, N. Dropka, M. HolenaProceedings of the 20th Conference Information Technologies - Applications and Theory - ITAT 2020, Oravská Lesná, Slovakia,18-22 sept 2020, p.99-10509-2020
Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic 28Si1-x72Gex AlloysA. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, and N. V. AbrosimovSemiconductors, 54 (9) (2020) 1123–112609-2020
In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substratesF. Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 4 (2020) 03500609-2020
Higher-order Zeeman effect of Mg-related donor complexes in siliconS. G. Pavlov, D. L. Kamenskyi, Yu. A. Astrov, V. B. Shuman, L. М. Portsel, A. N. Lodygin, N. V. Abrosimov, H. Engelkamp, A. Marchese, and H.-W. HübersPHYSICAL REVIEW B 102 (2020) 115205 09-2020
Brillouin zone center phonon modes in ZnGa2O4M. Stokey, Rafał Korlacki, Sean Knight, Matthew Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, and Mathias SchubertAppl. Phys. Lett. 117 (2020) 05210408-2020
Transition-metal-doped saturable absorbers for passive Q-switching of visible lasersH. Tanaka, Christian Kränkel, and Fumihiko KannariOptical Materials Express 10 (8) (2020) 1827-1842 08-2020
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:BiR. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov,N. V. Abrosimov, H. Riemann, H.-W. Hübers, and V.N. ShastinSemiconductors, 54(8) (2020) 969–97408-2020
Suitability of binary oxides for molecularbeam epitaxy source materials: A comprehensive thermodynamic analysisK.-M. Adkinson, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrel C. Schlom, and Zi-Kui LiuAPL Materials 8, 081110 (2020)08-2020
Aluminium self-diffusion in high-purity a-Al2O3: Comparison of Ti-doped and undoped single crystalsP. Fielitz, Steffen Ganschow, Klemens Kelm, Günter BorchardtActa Materialia 195 (2020) 416-42408-2020
Investigation of Au droplet formation and growth of SixGe1-x nanowires by molecular beam epitaxyF. Lange, Owen C. Ernst, Thomas Teubner and Torsten BoeckCrystEngComm 22 (2020) 632208-2020
GaAs solar cells grown on intentionally contaminated GaAs substratesJ. Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner, Aaron J. PtakJournal of Crystal Growth 541 (2020) 12566807-2020