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Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic 28Si1-x72Gex AlloysA. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, and N. V. AbrosimovSemiconductors, 54 (9) (2020) 1123–1126
In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substratesF. Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 4 (2020) 035006
Higher-order Zeeman effect of Mg-related donor complexes in siliconS. G. Pavlov, D. L. Kamenskyi, Yu. A. Astrov, V. B. Shuman, L. М. Portsel, A. N. Lodygin, N. V. Abrosimov, H. Engelkamp, A. Marchese, and H.-W. HübersPHYSICAL REVIEW B 102 (2020) 115205
Suitability of binary oxides for molecularbeam epitaxy source materials: A comprehensive thermodynamic analysisK.-M. Adkinson, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrel C. Schlom, and Zi-Kui LiuAPL Materials 8, 081110 (2020)
Aluminium self-diffusion in high-purity a-Al2O3: Comparison of Ti-doped and undoped single crystalsP. Fielitz, Steffen Ganschow, Klemens Kelm, Günter BorchardtActa Materialia 195 (2020) 416-424
Investigation of Au droplet formation and growth of SixGe1-x nanowires by molecular beam epitaxyF. Lange, Owen C. Ernst, Thomas Teubner and Torsten BoeckCrystEngComm 22 (2020) 6322
Brillouin zone center phonon modes in ZnGa2O4M. Stokey, Rafał Korlacki, Sean Knight, Matthew Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, and Mathias SchubertAppl. Phys. Lett. 117 (2020) 052104
Transition-metal-doped saturable absorbers for passive Q-switching of visible lasersH. Tanaka, Christian Kränkel, and Fumihiko KannariOptical Materials Express 10 (8) (2020) 1827-1842
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:BiR. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov,N. V. Abrosimov, H. Riemann, H.-W. Hübers, and V.N. ShastinSemiconductors, 54(8) (2020) 969–974
Influence of impurities from SiC and TiC crucible cover on directionally solidified siliconN. Dropka, Iryna Buchovska, Ulrich Degenhardt, Frank M.KiesslingJournal of Crystal Growth 542 (2020) 125692
Semiconductor scintillator development: Pure and doped β-Ga2O3W. Drozdowski, Michał Makowski, Marcin E.Witkowski, Andrzej J.Wojtowicz, RobertSchewski, Klaus Irmscher, ZbigniewGalazkaOptical Materials 105 (2020) 109856
Kinetic Monte Carlo model for homoepitaxial growth of Ga2O3W. Miller, Dennis Meiling, Robert Schewski, Andreas Popp, Saud Bin Anooz, and Martin AlbrechtPhys. Rev. Research 2 (2020) 033170
GaAs solar cells grown on intentionally contaminated GaAs substratesJ. Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner, Aaron J. PtakJournal of Crystal Growth 541 (2020) 125668
Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growthO. C. Ernst, F. Lange, Th. Teubner, T. BoeckBeilstein J. Nanotechnol. 11 (2020) 1371–1380
Output characteristics of Pr:YAlO2 and Pr:YAG lasers pumped by high-power GaN laser diodesS. Fujita, Hiroki Tanaka, AND Fumihiko KannariApplied Optics 59 (17) (2020) 5124-5130
TiSr antisite: An abundant point defect in SrTiO3A. Karjalainen, Vera Prozheeva, Ilja Makkonen , Christo Guguschev, Toni Markurt, Matthias Bickermann , and Filip TuomistoJournal of Applied Physics 127 (2020) 245702
Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopyI. Levine, I. Gamov, M. Rusu, K. Irmscher, C. Merschjann, E. Richter, M. Weyers, and Th. DittrichPhysical Review, B 101 (2020) 245205
The Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State BatteriesM. Philipp, Bernhard Gadermaier, Patrick Posch, Ilie Hanzu, Steffen Ganschow, Martin Meven, Daniel Rettenwander, Günther J. Redhammer, and H. Martin R. WilkeningAdv. Mater. Interfaces 7(16) (2020) 2000450
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPES. Bin Anooz, R. Grüneberg, C. Wouters , R. Schewski , M. Albrecht , A. Fiedler , K. Irmscher , Z. Galazka , W. Miller , G. Wagner, J. Schwarzkopf , and A. PoppAppl. Phys. Lett. 116 (2020) 182106
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystalsJ. Boy, Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka , and Saskia F. FischerAIP Advances 10 (2020) 055005