Publikationen

PublikationVeröffentlichungDatum
Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric FieldsE. Langenberg, Hanjong Paik, Eva H. Smith, Hari P. Nair, Isabelle Hanke, Steffen Ganschow, Gustau Catalan, Neus Domingo, and Darrell G. SchlomACS Appl. Mater. Interfaces 12 (2020) 20691–2070304-2020
Gate controlled valley polarizer in bilayer grapheneH. Chen, Pinjia Zhou, Jiawei Liu, Jiabin Qiao, Barbaros Oezyilmaz, Jens MartinNature Communications 11 (2020) 120203-2020
Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing StudiesV. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. PoloskinSemiconductors 54 (2020)4 6–5403-2020
The natural critical current density limit for Li7La3Zr2O12 garnetsF. Flatscher, Martin Philipp, Steffen Ganschow, H. Martin R. Wilkening and Daniel RettenwanderJ. Mater. Chem. A 8 (2020) 15782-15788 03-2020
Bulk β-Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiationZ. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schroeder, M. BickermannJournal of Alloys and Compounds 818 (2020) 15284203-2020
Charge disproportionate molecular redox for discrete memristive and memcapacitive switchingS. Goswami, Santi P. Rath, Damien Thompson, Svante Hedström, Meenakshi Annamalai, Rajib Pramanick, B. Robert Ilic, Soumya Sarkar, Sonu Hooda, Christian A. Nijhuis, Jens Martin, R. Stanley Williams, Sreebrata Goswami & T. Venkatesan Nature Nanotechnology 15 (2020)380–38903-2020
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SxGe1-x Quantum DotA. Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. SchreiberPhys. Rev. Applied 13 (2020) 034068 03-2020
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAMS. Roy, Gang Niu, Qiang Wang, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Peng Shi, Sannian Song, Zhitang Song, Zuo-Guang Ye, Christian Wenger, Thomas Schroeder, Ya-Hong Xie, Xiangjian Meng, Wenbo Luo, and Wei RenACS Appl. Mater. Interfaces, ACS Appl. Mater. Interfaces 12 (2020) 10648–1065602-2020
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxyS. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P. A. Shields, M. Kneissl, M. WeyersJournal of Crystal Growth 531 (2020) 12534302-2020
Ti- and Fe-related charge transition levels in β−Ga2O3Ch. Zimmermann, Ymir Kalmann Frodason , Abraham Willem Barnard, Joel Basile Varley , Klaus Irmscher , Zbigniew Galazka , Antti Karjalainen , Walter Ernst Meyer , Francois Danie Auret, and Lasse VinesAppl. Phys. Lett., 116, (2020), 072101 02-2020
Technology development of high purity germanium crystals for radiation detectorsN. Abrosimov, M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicskó-Csáthy, U. Juda, S. Kayser, W. Miller, M. Pietsch, F. M. KießlingJournal of Crystal Growth 532, (2020) 12539602-2020
Favourable growth conditions for the preparation of bulk AlN single crystals by PVTC. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. StraubingerCrystEngComm. 22 (2020) 1762-176802-2020
Elastic properties of single crystal Bi12SiO20 as a function of pressure and temperature and acoustic attenuation effects in Bi12MO20 (M = Si, Ge and Ti)E. Haussühl, Hans Josef Reichmann, Jürgen Schreuer, Alexandra Friedrich, Christian Hirschle , Lkhamsuren Bayarjargal, Björn Winkler, Igor Alencar, Leonore Wiehl, Steffen GanschowMater. Res. Express 7 (2020) 02570102-2020
Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701 01-2020
Local Electronic Structure in AlN Studied by Single-Crystal 27Al and 14N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 46901-2020
Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706 01-2020
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–68201-2020
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306 01-2020
Diode‐Pumped Laser Operation of Tb3+:LiLuF4 in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 190022901-2020
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 12529701-2020