Asymmetry of the Atomic Core Structure of Dissociated a-Screw Dislocation in GaN Probed by Polarization Optical SpectroscopyO. Medvedev, M. Albrecht, O. VyvenkoRapid Research Letter, Vol. 13, Issue 9,190016905-2019
Sub-100-fs Kerr lens mode-locked Yb:Lu2O3 thin-disk laser oscillator operating at 21 W average powerN. Modsching, J. Drs., J. Fischer, C. Paradis, F. Labaye, M. Gaponenko, C. Kränkel, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 27, Issue 11, pp. 16111-16120 (2019)05-2019
The electronic structure and the formation of polarons in Mo-doped BiVO4 measured by angle-resolved photoemission spectroscopyM. Kohamed, May, Matthias M.; Kanis, Michael; Bruetzam, Mario; Uecker, Reinhard; van de Krol, Roel; Janowitz, Christoph; Mulazzi, MattiaRSC Adv., 2019,9, 15606-1561405-2019
Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystalT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, SDDG06 (2019)05-2019
Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluoridesP. G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. PotapovMaterials Science and Engineering: B Volume 244, May 2019, Pages 1-505-2019
Dielectric, piezoelectric and elastic constants of Ca3TaGa3Si2O14 single crystals at elevated temperaturesY. Suhaka, Michal Schulza, Andrei Sotnikovb, Hagen Schmidtb, Steffen Ganschowc, Sergey Sakharovd, and Holger Fritzea Steffen Ganschowc, Sergey Sakharovd, and Holger FritzeaFerroelectrics, 8 537 (2018) 255–26305-2019
Thermodynamic Investigation of Ternary Delafossite CrystalsN. Wolff, Klimm, Detlef; Ganschow, Steffen; Siche, DietmarCrystal Research and Technology, Volume54, Issue7 July 2019, 190003605-2019
Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum WellsM. H. Zoellner, Chahine, Gilbert Andre; Lahourcade, Lise; Mounir, Christian; Manganelli, Costanza Lucia; Schulli, Tobias Urs; Schwarz, Ulrich Theodor; Zeisel, Roland; Schroeder, ThomasACS Applied Materials & Interfaces , 2019, 11, 25, 22834–2283905-2019
Characterization of the Si:Se+ Spin-Photon InterfaceA. DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie SimmonsPhys. Rev. Applied 11, 04403604-2019
Cross sections and transition intensities of Tb3+ in KY(WO4)2M. Demesh, A. Mudryi, A. Pavlyuk, E. Castellano-Hernández, C. Kränkel, and N. KuleshovOSA Continuum Vol. 2, Issue 4, pp. 1378-1385 (2019)04-2019
Stabilization of sputtered AlN/sapphire templates during high temperature annealingS. Hagedorn, Walde, S.; Mogilatenko, A.; Weyers, M.; Cancellara, L.; Albrecht, M.; Jaeger, D.Journal of Crystal Growth, Volume 512, 15 April 2019, Pages 142-14604-2019
Synthesis and characterization of the novel antiferromagnet LaNiB3O7K. M. Powderly, ShuGuo, KarolineStolze, Elizabeth M.Carnicom, R.J.CavaJournal of solid state chemistry, Volume 272, April 2019, Pages 113-11704-2019
Decomposition of a Solid Solution of Interstitial Magnesium in SiliconV. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. AstrovSemiconductors, 2019, Vol. 53, pp. 296–29704-2019
Static Dielectric Constant of ß-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)A. Fiedler, R. Schewski, Z. Galazka, and K. IrmscherECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)03-2019
A novel 3D printed radial collimator for x-ray diffraction S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4Review of Scientific Instruments 90, 035102 (2019)03-2019
Simulation of grain evolution in solidification of silicon on meso-scopic scaleX. Qi, Lijun Liub, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Wolfram MillerComputational Materials Science 159 (2019) 432–43903-2019
Longitudinal phonon plasmon mode coupling in β-Ga2O3M. Schubert, A. Mock, R.Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. DarakchievaAppl. Phys. Lett. 114, 102102 (2019)03-2019
High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer sourceM. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. HübersAppl. Phys. Lett. 114, 092103 (2019);03-2019
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsM. wienold, Pavlov, S. G.; Abrosimov, N. V.; Huebers, H. -W.Appl. Phys. Lett. 114, 092103 (2019)03-2019
Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin filmsJ. Boy, M. Handwerg, R.Ahrling , R. Mitdank, G. Wagner, Z. Galazka, S. F. FischerAPL Mater. 7, 022526 (2019)02-2019