Tailoring the scintillation properties of ß- Ga2O3M. Makowski, W. Drozdowski, M. E. Witkowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. Galazka Vol. 9, No. 9 / 1 September 2019 / Optical Materials Express 373808-2019
Dynamics of crosshatch patterns in heteroepitaxyF. Rovaris, Zoellner, Marvin H.; Zaumseil, Peter; Marzegalli, Anna; Di Gaspare, Luciana; De Seta, Monica; Schroeder, Thomas; Storck, Peter; Schwalb, Georg; Capellini, Giovanni; Montalenti, FrancescoPHYSICAL REVIEW B, Vol. 100, Iss. 8 — 15 August 201908-2019
Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metalsK. Jiang, Luke A.M. Lyle, Elizabeth V. Favela, Diamond Moody, Tianxiang Lin, Kalyan K. Das, Andreas Popp, Zbigniew Galazka, Günter Wagner, and Lisa M. Porter2019 ECS Trans. 92 7107-2019
Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, 080903 (2019)07-2019
Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2M. J. Wahila, Paez, Galo; Singh, Christopher N.; Regoutz, Anna; Sallis, Shawn; Zuba, Mateusz J.; Rana, Jatinkumar; Tellekamp, M. Brooks; Boschker, Jos E.; Markurt, Toni; Swallow, Jack E. N.; Jones, Leanne A. H.; Veal, Tim D.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Sadowski, Jerzy T.; Prendergast, David; Lee, Wei-Cheng; Doolittle, W. Alan; Piper, Louis F. J.Physical Review Materials, Vol. 3, Iss. 7 — July 201907-2019
Role of hole confinement in the recombination properties of InGaN quantum structuresM. anikeeva, Albrech, M.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Cheze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.Scientific Reports volume 9, Article number: 9047 (2019)06-2019
Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched siliconM. Beck, N. V. Abrosimov, J. Hübner, M. OestreichPHYSICAL REVIEW B 99, 245201 (2019)06-2019
Features of the Formation of the BiBs Defect in SiL. I. Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolay Abrosimov, Helge RiemannPhys. Status Solidi A 2019, 216, 190029106-2019
Ferroelectric Self-Poling in GeTe Films and CrystalsD. Kriegner, Springholz, Gunther; Richter, Carsten; Filet, Nicolas; Mueller, Elisabeth; Capron, Marie; Berger, Helmut; Holy, Vaclay; Dil, J. Hugo; Krempasky, JurajCrystals 2019, 9(7), 33506-2019
Vectorial observation of the spin Seebeck effect in epitaxial NiFe2O4 thin films with various magnetic anisotropy contributionsZ. Li, Jan Krieft, Amit Vikram Singh, Sudhir Regmi, Ankur Rastogi, Abhishek Srivastava, Zbigniew Galazka, Tim Mewes, Arunava Gupta, Timo KuschelAppl. Phys. Lett. 114, 232404 (2019)06-2019
Unusual Polarization Dependence of Dislocation-Related Luminescence in n-GaNO. Medvedev, M. Albrecht, O. VyvenkoPhys. Status Solidi A 2019, 216, 1900305 06-2019
Float-Zone Growth of Silicon Crystals using Large-area Seeding R. Menzel, H.-J. Rost, F. M. Kießling, L. SyllaJournal of Crystal Growth, Volume 515, 1 June 2019, Pages 32-3606-2019
Advanced coherent X-ray diffraction and electron microscopy of individual InP nanocrystals on Si nanotips for III-V on Si electronics and optoelectronicsG. Niu, S. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E. H. Hussein, M. A. Schubert, P.Zaumseil, G. Capellini, W.Masselink, W. Ren, Z. Ye, M. Lehmann, T. Schülli, T. Schroeder and M. - I. RichardPhys. Rev. Applied 11, 064046 – 201906-2019
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growthM. Plate, Dadzis, Kaspars; Krauze, Armands; Menzel, Robert; Virbulis, JanisJournal of Crystal Growth ,Volume 521, 1 September 2019, Pages 46-4906-2019
Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron-based pump-probe experimentM. Sander, Bauer, Roman; Kabanova, Victoria; Levantino, Matteo; Wulff, Michael; Pfuetzenreuter, Daniel; Schwarzkopf, Jutta; Gaal, PeterJ. Synchrotron Rad. (2019). 26, 1253-125906-2019
Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1-xNbO3 thin filmsL. v. Helden, Bogula, L.; Janolin, P. -E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.Appl. Phys. Lett. 114, 23290506-2019
DLTS Investigation of the Energy Spectrum of Si:Mg CrystalsN. Yarkin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. WeberSemiconductors, 2019, Vol. 53, No. 6, pp. 789–79406-2019
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in siliconR. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. ThewaltPhysical Review B 99, 195207 (2019)05-2019
Indium incorporation in homoepitaxial β- Ga2O3 thin films grown by metal organic vapor phase epitaxyS. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Albrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka, and G. WagnerJournal of Applied Physics 125, 195702 (2019)05-2019
High field-emission current density from β-Ga2O3 nanopillarsA. Grillo, Julien Barrat, Z.Galazka, M. Passacantando, F. Giubileo, L. Iemmo, G. Luongo, F. Urban, C. Dubourdieu, A. BartolomeoAppl. Phys. Lett. 114, 193101 (2019)05-2019