News | 16-09-2019

Focus on defects

For four days, scientists discussed methods for analysis of crystal imperfections at the 18th International DRIP Conference in Berlin

Participants of the 18. DRIP conference in Berlin ©FBH/Mogilatenko

From 9 to 12 September, it was all about crystal defects in semiconductors at Novotel Tiergarten. 119 scientists from 17 countries met there for the XVIII. DRIP conference, which was jointly organized by the Ferdinand-Braun-Institut (FBH) and the Leibniz Institute for Crystal Growth.

„We were not only able to attract outstanding scientists from all over the world, but also successfully presented our own research and young scientists,“ reports Dr. Anna Mogi-latenko from FBH, who co-organized the conference. Two junior prizes, the Best Student Poster Award (Jonas Weinrich) and the Best Student Oral Presentation Award (Norman Susilo), were presented by the international steering committee. The work of the two PhD students was carried out at or in cooperation with the Ferdinand-Braun-Institut.

The participants of the DRIP conference particularly welcomed the multidisciplinary approach of the conference and the manifold possibilities for networking.


About the DRIP Conference
The international conference deals with techniques and tools to comprehensively analyze crystal defects in semiconductors. Their influence on the fundamental material properties and the associated electronic and optoelectronic devices can thus be evaluated, leading to increased efficiency and improved performance. Such devices include semiconductor-based laser diodes, LEDs, transistors and solar cells, which drive innovation in a variety of areas: from 5G to renewable energies.


Published: Adlershof Journal