Specifically, the use of isotope pure Silicon and Germanium (Si/Ge) materials systems is considered a key enabling approach for quantum devices. IKZ substantially benefits in this area of preparing very pure and isotopically enriched Si and Ge crystals from its world leading experience e.g. by metrology projects to define the new kg calibration standard.
On 22nd March 2019, IKZ organized a Si/Ge Quantum Materials workshop to establish the complete value chain from isotopically enriched Si/Ge material purification, single crystal growth as well as heteroepitaxy preparation by CVD and MBE up to manufacturing of Qubit structures, including materials and device characterization on a state-of-the-art level.
For this purpose, IKZ welcomed a group of world leading researchers from Russia (Prof. Petr G. Sennikov, Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod; Prof. Andrey D. Bulanov, Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod; Prof. Alexander A. Ezhevskii, Department of Physics of Semiconductors and Optoelectronics, Nizhny Novgorod Lobachevsky University), from Australia (Prof. Sven Rogge, Department of Condensed Matter Physics, University of New South Wales, Sydney), from Canada (Prof. Oussama Moutanabbir, Department of Engineering Physics, Polytechnique Montréal), from Italy (Prof. Giovanni Capellini, Department of Science, Roma Tre University) and from Germany (Dr. Lars Schreiber, Institute for Quantum Information, RWTH University, Aachen; Dr. Wolfgang Klesse, Leibniz-Institut für innovative Mikroelektronik (IHP), Frankfurt/Oder) to strengthen international links and define solid R & D concepts towards SiGe quantum devices.
IKZ will use its international guest scientist program to strengthen links with these leading research groups by mutual research visits and by initiating common, third party funded research projects.
