Dr. Gradwohl has been an active member of this scientific community since 2023, contributing cutting-edge research on SiGe quantum materials and heterostructures. At this year’s ICSI/ISTDM meeting in Tokyo, he was invited to present his team’s latest results on valley-splitting engineering in silicon using ultra-short-period, nuclear-spin-free Ge modulations in strained Si quantum wells. The work, recently published in Nano Letters [REF], is carried out in close collaboration with Dr. Lars Schreiber's Si-qubit group at RWTH Aachen (DFG individual research project - Grant Nr. 554676597).
The appointment to the International Advisory Committee recognizes both the scientific impact of IKZ’s contributions and it’s growing role in shaping the direction of research in the field. The committee advises on scientific topics, program development, and future conference locations, helping to ensure that ICSI/ISTDM remains a central platform for innovation in silicon epitaxy and SiGe device technology.
Dr. Gradwohl’s nomination reflects not only scientific achievement but also the increasing visibility of IKZ’s activities in quantum-relevant group-IV materials research.
Side note: Part of the trip was supported by the Early Career Prize 2021 of the DGKK (Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung).
[REF] Gradwohl, Kevin-P., et al. "Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation." Nano Letters 25.11 (2025): 4204-4210.
Contact:
Leibniz-Institut für Kristallzüchtung (IKZ)
Dr. Kevin-Peter Gradwohl
Phone: +49 (30) 246 499 306
Email: kevin-peter.gradwohlikz-berlin.de
