GOAL – Gallium Oxide Application Laboratory for Power Electronics

With the project G.O.A.L. (“Gallium Oxide Application Laboratory for Power Electronics”), led by Dr. Andreas Popp, the Leibniz-Institut für Kristallzüchtung (IKZ) is expanding its research and development infrastructure in the field of innovative semiconductor materials. The aim of the project is to establish an integrated technological platform for the semiconductor material gallium oxide (Ga₂O₃) for applications in power electronics.

IKZ has extensive expertise in the growth of gallium oxide bulk crystals as well as in substrate and wafer processing. Within the framework of the project, this existing infrastructure is being systematically expanded to include the process step of gallium oxide epitaxy.

Gallium oxide-based power electronics addresses a wide range of application fields. New markets are emerging particularly at the level of semiconductor technologies (wafers, transistors, power modules) and through increased value creation in the electronics industry, especially in power electronic converters for applications such as e-mobility, photovoltaics, wind energy, and power plant transformation. Improved material properties enable reduced energy losses and increased system efficiency, thereby supporting the energy transition. To enable industrial applications and the development of electronic devices, wafer layer systems with diameters of at least 2 inches are required.

A key investment focus of the project is therefore the installation of a 3×2" MOVPE system from AIXTRON for the deposition of epitaxial gallium oxide layers on wafers up to 4 inches in diameter. The system includes an integrated in-situ monitoring system from LayTec, enabling continuous process monitoring and quality control during growth.

This investment establishes the technical basis for the production of 2- to 4-inch gallium oxide epitaxial wafers and thus enables the extension of the value chain at the site.

The acquisition of the MOVPE system, including the in-situ monitoring system, represents the core investment of the project. Without this expansion of technical infrastructure, made possible by the project, the implementation of the project objectives would not be feasible.

The project is co-financed by the European Regional Development Fund (Europäischer Fonds für regionale Entwicklung, EFRE). The funding supports the targeted expansion of application-oriented research infrastructure, strengthens innovation capacity, and advances technological competencies at the Berlin location.

In this way, the project contributes to strengthening the regional innovation ecosystem and enhancing competitiveness in the field of advanced semiconductor technologies.

The project is embedded in existing collaborations with partners from academia and industry, including the Ferdinand-Braun-Institut as well as other institutions and companies in the Berlin-Brandenburg region.

With G.O.A.L., IKZ aims to establish itself as a Europe-wide research partner and supplier of 2-inch gallium oxide epitaxial wafers as a base material for power electronic devices. Due to the strong industrial relevance, direct exploitation in the semiconductor and power electronics industry (e.g., Bosch, Infineon, ZF) is expected. In addition, the IKZ Startup „NextGO-Epi“, founded in April 2025, is expected to significantly benefit from G.O.A.L. in terms of its development and market opportunities.