Publications

Filter
Year of publication
—

Sort by

Search (Author, Title)

Delete
Publication
Y-Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters (2023)
Charge transport and acoustic loss in lithium niobate-lithium tantalate solid solutions at temperatures up to 900 degrees CU. Yakhnevych, C. Kofahl, S. Hurskyy, S. Ganschow, Y. Suhak, H. Schmidt, and H. FritzeSolid State Ionics 392 (2023)
Bulk single crystals and physical properties of β-(AlxGa1-x)2O3 (x=0-0.35) grown by the Czochralski methodZ. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. B. Anooz, K. Irmscher, M. Suendermann, D. Klimm, T. S. Chou, J. Rehm, T. Schroeder and M. BickermannJournal of Applied Physics(3), (2023)
Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction ImagingT. Straubinger, C. Hartmann, M. P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schröder, D. Hänschke and C. RichterCrystal Growth & Design(3), (2023) 1538-1546
Electromechanical Behavior of Al/Al2O3 Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance MeasurementsB. Putz, T. E. J. Edwards, E. Huszar, P. A. Gruber, K. P. Gradwohl, P. Kreiml, D. M. Tobbens, and J. MichlerAdvanced Engineering Materials 25 (2) (2023)
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceC. Corley-Wiciak, C. Richter, M. H. Zoellner, I. Zaitsev, C. L. Manganelli, E. Zatterin, T. U. Schülli, A. A. Corley-Wiciak, J. Katzer, F. Reichmann, W. M. Klesse, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Virgilio and G. CapelliniAcs Applied Materials & Interfaces(2), (2023) 3119-3130
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device applicationT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, M. Pietsch, J. Rehm, T. T. V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler and A. PoppApplied Physics Letters(5), (2023)
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2023) 2200204
Thermally activated increase of the average grain size as the origin of resistivity enhancement inNbO2 films grown by pulsed-laser depositionN. Jaber, J. Feldl, J. Stoever, K. Irmscher, M. Albrecht, M. Ramsteiner and J. SchwarzkopfPhysical Review Materials(1), (2023)
Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquidA. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, N. V. Abrosimov; R. K. Zhukavin, V. N. Shastin Mater. Sci. Eng. B 286 (2022) 115979
Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics applicationJ. Rehm, T.-S. Chou, S. Bin Anooz, P. Seyidov, A. Fiedler, Z. Galazka, A. Popp Appl. Phys. Lett. 121 (2022) 240503
Step pinning and hillock formation in (Al,Ga)N films on native AlN substratesT. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht J. Appl. Phys. 132 (2022) 223102
Thermal Activation of Valley-Orbit States of Neutral Magnesium in SiliconR.J.S. Abraham, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltSemiconductors 56 1 (2022) 59-62
Laser cooling in Yb:KY3F10: a comparison with Yb:YLFS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Express 30 (2022) 47235-47248
Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiationV.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, S.B. Lastovskii, G.A. Oganesyan, D.S. Poloskin, A.A. Aref’evPhysics of the Solid State 12 (2022) 1878
Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal growth F. Burkle, M. Forste, K. Dadzis, I. Tsiapkinis, O. Patzold, A. Charitos, M. Dues, J. Czarske, L. Buttner, Flow Meas. Instrum. 88 (2022) 102258
Smart Design of Cz-Ge Crystal Growth Furnace and ProcessN. Dropka, X. Tang, G. K. Chappa, M. HolenaCrystals 12 (2022) 1764
Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK.-P. Gradwohl, C.-H. Lu, Y. Liu, C. Richter, T. Boeck, J. Martin, M. AlbrechtPhys. Status Solidi RRL (2022) 2200398
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2022) 2200204
Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect I. Gamov, J. L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M. R. Wagner, M. Bickermann Phys. Rev. B 106 (2022) 184110