Leibniz-Institut für Kristallzüchtung

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Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in siliconS. G. Pavlov and N. AbrosimovPhysical Review Materials(5), (2024)

Over 6 MV/cm operation in β-Ga₂O₃ Schottky barrier diodes with IrO₂ and RuO₂ anodes deposited by molecular beam epitaxyB. Cromer, D. Saraswat, N. Pieczulewski, W. Li, K. Nomoto, F. V. E. Hensling, K. Azizie, H. P. Nair, D. G. Schlom, D. A. Muller, D. Jena and H. G. XingJournal of Vacuum Science & Technology A(3), (2024)

Solid solution perovskite substrate materials with indifferent pointsV. J. Fratello, L. A. Boatner, H. A. Dabkowska, A. Dabkowski, T. Siegrist, K. Y. Wei, C. Guguschev, D. Klimm, M. Brützam, D. G. Schlom and S. SubramanianJournal of Crystal Growth(2024)

Ultrafast Optically Induced Perturbation of Oxygen Octahedral Rotations in Multiferroic BiFeO₃ Thin FilmsN. Li, H. J. Lee, D. S. Gyan, Y. Ahn, E. C. Landahl, J. Carnis, J. Y. Lee, T. Y. Kim, S. Unithrattil, J. Y. Jo, S. H. Chun, S. Kim, S. Y. Park, I. Eom, C. Adamo, S. J. Li, J. Z. Kaaret, D. G. Schlom, H. D. Wen, N. A. Benedek and P. G. EvansNano Letters2024)

Bounds to electron spin qubit variability for scalable CMOS architectures.Cifuentes, J. D.; Tanttu, T.; Gilbert, W.; Huang, J. Y.; Vahapoglu, E.; Leon, R. C. C.; Serrano, S.; Otter, D.; Dunmore, D.; Mai, P. Y.; Schlattner, F.; Feng, M. K.; Itoh, K.; Abrosimov, N.; Pohl, H. J.; Thewalt, M.; Laucht, A.; Yang, C. H.; Escott, C. C.; Lim, W. H.; Hudson, F. E.; Rahman, R.; Dzurak, A. S.:Saraiva, A.,Nature Communications;(2024), 4299

Evolution of domain structure in epitaxial ferroelectric K_0.5Na_0.5NbO₃ films grown by metal-organic vapor-phase epitaxy.Wang, Y. K.; Bin Anooz, S.; Niu, G.; Zhao, J. Y.; Schmidbauer, M.; Wang, L. Y.; Ren, W.:Schwarzkopf, J.,Physical Review Materials;(2024), 054409

Ferroelectric to paraelectric structural transition in LiTaO₃ and LiNbO₃.Bernhardt, F.; Verhoff, L. M.; Schäfer, N. A.; Kapp, A.; Fink, C.; Al Nachwati, W.; Bashir, U.; Klimm, D.; El Azzouzi, F.; Yakhnevych, U.; Suhak, Y.; Schmidt, H.; Becker, K. D.; Ganschow, S.; Fritze, H.:Sanna, S.,Physical Review Materials;(2024), 054406

Ground- and excited-state properties of LiNb_1-xTa_xO₃ solid solutions.Bernhardt, F.; Pfeiffer, F. A.; Schug, F.; Sanna, S.; Pfannstiel, A.; Hehemann, T.; Imlau, M.:Ganschow, S.,Physical Review Materials;(2024), 054403

In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga₂O₃ thin films on c-plane A₂O₃ via MOVPE processT. S. Chou, S. Bin Anooz, R. Grueneberg, J. Rehm, A. Akhtar, D. Mukherjee, P. Petrik and A. PoppApplied Surface Science(2024)

A High-Temperature Optical Spectroscopy Study of the Fundamental Absorption Edge in the LiNbO₃-LiTaO₃ Solid SolutionP. Gaczynski, Y. Suhak, S. Ganschow, S. Sanna, H. Fritze and K. D. BeckerPhysica Status Solidi a-Applications and Materials Science2024)

Absence of 3a₀ charge density wave order in the infinite-layer nickelate NdNiO₂C. T. Parzyck, N. K. Gupta, Y. Wu, V. Anil, L. Bhatt, M. Bouliane, R. Gong, B. Z. Gregory, A. Luo, R. Sutarto, F. He, Y. D. Chuang, T. Zhou, G. Herranz, L. F. Kourkoutis, A. Singer, D. G. Schlom, D. G. Hawthorn and K. M. ShenNature Materials(4), (2024)

Anisotropy of optical transitions in β-Ga₂O₃ investigated by polarized photoluminescence excitation spectroscopyM. Meissner, N. Bernhardt, F. Nippert, B. M. Janzen, Z. Galazka and M. R. WagnerApplied Physics Letters(15), (2024)

Data-Driven Cz-Si Scale-Up under Conditions of Partial SimilarityN. Dropka, K. Böttcher, G. K. Chappa and M. HolenaCrystal Research and Technology (2024)

Dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film with monoclinic and orthorhombic symmetryS. Bin Anooz, P. Petrik, Y. K. Wang, D. Mukherjee, M. Schmidbauer and J. SchwarzkopfOptics Express(9), (2024) 15597-15609

Epitaxial growth of α-(Al_xGa_1-x)₂O₃ by suboxide molecular-beam epitaxy at 1 μm/hJ. Steele, K. Azizie, N. Pieczulewski, Y. Kim, S. Mou, T. J. Asel, A. T. Neal, D. Jena, H. G. Xing, D. A. Muller, T. Onuma and D. G. SchlomApl Materials(4), (2024)

Evolution of Graphene Dirac Fermions in Electric Double-Layer Transistors with a Soft BarrierF. R. Lin, J. W. Liu, H. Lu, X. Liu, Y. Liu, Z. L. Hu, P. Lyu, Z. H. Zhang, J. Martin, W. L. Guo and Y. P. LiuAdvanced Functional Materials (2024)

Oxygen partial pressure and temperature dependent electrical conductivity of lithium-niobate-tantalate solid solutionsU. Yakhnevych, F. El Azzouzi, F. Bernhardt, C. Kofahl, Y. Suhak, S. Sanna, K. D. Becker, H. Schmidt, S. Ganschow and H. FritzeSolid State Ionics(2024)

Single crystalline high-purity germanium bars grown by the zone-refining techniqueK. P. Gradwohl, A. Gybin, C. Guguschev, A. Kwasniewski, M. Pietsch, U. Juda, C. Richter and R. R. SumathiJournal of Crystal Growth(2024)

2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in GermaniumT. B. Gill, S. Pavlov, C. S. Kidd, P. Dean, A. D. Burnett, A. Dunn, L. H. Li, N. V. Abrosimov, H. W. Hübers, E. H. Linfield, A. G. Davies and J. R. FreemanAcs Photonics(4), (2024) 1447-1455

Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposureJ. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, M. O. Thompson, H. G. Xing, D. Jena and H. P. NairApplied Physics Letters(11), (2024)

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