Leibniz-Institut für Kristallzüchtung

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Growth of heavily-doped Germanium single crystals for mid-Infrared applicationsR. Sumathi, Nikolay Abrosimov, Kevin-P. Gradwohl, Matthias Czupalla, Jörg FischerJournal of Crystal Growth 535 (2020) 125490

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphireN. Susilo, E.Ziffer, S.Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Rass, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, M. KneisslPhotonics Research 8 (2020) 589-594

High quality-factor Kerr-lens mode-locked Tm:Sc₂O₃ single crystal laser with anomalous spectral broadeningA. Suzuki, Christian Kränkel, and Masaki TokurakawaAppl. Phys. Express 13 (2020) 052007

Gate controlled valley polarizer in bilayer grapheneH. Chen, Pinjia Zhou, Jiawei Liu, Jiabin Qiao, Barbaros Oezyilmaz, Jens MartinNature Communications 11 (2020) 1202

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing StudiesV. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. PoloskinSemiconductors 54 (2020)4 6–54

The natural critical current density limit for Li₇La₃Zr₂O₁₂ garnetsF. Flatscher, Martin Philipp, Steffen Ganschow, H. Martin R. Wilkening and Daniel RettenwanderJ. Mater. Chem. A 8 (2020) 15782-15788

Bulk β-Ga₂O₃ single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiationZ. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schroeder, M. BickermannJournal of Alloys and Compounds 818 (2020) 152842

Charge disproportionate molecular redox for discrete memristive and memcapacitive switchingS. Goswami, Santi P. Rath, Damien Thompson, Svante Hedström, Meenakshi Annamalai, Rajib Pramanick, B. Robert Ilic, Soumya Sarkar, Sonu Hooda, Christian A. Nijhuis, Jens Martin, R. Stanley Williams, Sreebrata Goswami & T. Venkatesan Nature Nanotechnology 15 (2020)380–389

Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/S_xGe_1-x Quantum DotA. Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. SchreiberPhys. Rev. Applied 13 (2020) 034068

Technology development of high purity germanium crystals for radiation detectorsN. Abrosimov, M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicskó-Csáthy, U. Juda, S. Kayser, W. Miller, M. Pietsch, F. M. KießlingJournal of Crystal Growth 532, (2020) 125396

Favourable growth conditions for the preparation of bulk AlN single crystals by PVTC. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. StraubingerCrystEngComm. 22 (2020) 1762-1768

Elastic properties of single crystal Bi₁₂SiO₂₀ as a function of pressure and temperature and acoustic attenuation effects in Bi₁₂MO₂₀ (M = Si, Ge and Ti)E. Haussühl, Hans Josef Reichmann, Jürgen Schreuer, Alexandra Friedrich, Christian Hirschle , Lkhamsuren Bayarjargal, Björn Winkler, Igor Alencar, Leonore Wiehl, Steffen GanschowMater. Res. Express 7 (2020) 025701

Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAMS. Roy, Gang Niu, Qiang Wang, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Peng Shi, Sannian Song, Zhitang Song, Zuo-Guang Ye, Christian Wenger, Thomas Schroeder, Ya-Hong Xie, Xiangjian Meng, Wenbo Luo, and Wei RenACS Appl. Mater. Interfaces, ACS Appl. Mater. Interfaces 12 (2020) 10648–10656

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxyS. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P. A. Shields, M. Kneissl, M. WeyersJournal of Crystal Growth 531 (2020) 125343

Ti- and Fe-related charge transition levels in β−Ga₂O₃Ch. Zimmermann, Ymir Kalmann Frodason , Abraham Willem Barnard, Joel Basile Varley , Klaus Irmscher , Zbigniew Galazka , Antti Karjalainen , Walter Ernst Meyer , Francois Danie Auret, and Lasse VinesAppl. Phys. Lett., 116, (2020), 072101

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306

Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 1900229

Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 125297

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 53 (2020) 880-884

Sensitization of SnO₂ Single Crystals with Multidentate-Ligand- Capped PbS Colloid Quantum Dots to Enhance the Photocurrent StabilityG. Li, Qian Yang,Lenore Kubie, Joshua T. Stecher, Zbigniew Galazka, Reinhard Uecker, and Bruce A. ParkinsonChemNanoMat 6 (2020) 461-469

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