Leibniz-Institut für Kristallzüchtung - Publications

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Substrate-orientation dependence of ß-Ga₂O₃ (100), (010), (001), and (201) homoepitaxy by indium-mediated metalexchange catalyzed molecular beam epitaxy (MEXCAT-MBE)P. Mazzolini, A. Falkenstein , C. Wouters , R. Schewski , T. Markurt, Z. Galazka , M. Martin , M. Albrecht , and O. BierwagenAPL Materials 8 (2020) 011107

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressureN. V. Morozov, Igor V. Korobeinikov, Nikolay V. Abrosimov, and Sergey V. OvsyannikovCrystEngComm 22 (2020) 5416

Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701

Local Electronic Structure in AlN Studied by Single-Crystal ²⁷Al and ¹⁴N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706

Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–682