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Energy level alignment of confined hole states in InAs1-x-ySbxPy asymmetric double quantum dots for single-photon energy up- and downconversion.Gambaryan, K. M.; Ernst, O.; Boeck, T.; Marquardt, O.,Applied Physics Letters;(2025), 061102
Flow instability caused by temperature boundary conditions in a model of Czochralski crystal growth.Grants, I.; Pal, J.; Tsiapkinis, I.; Eckert, S.; Gerbeth, G.; Raebiger, D.; Dadzis, K.,Physics of Fluids;(2025), 024106
Spectroscopy and efficient OPSL-pumped laser operation of Er:BaF2 crystal at 2.8 μm.Hou, W. T.; Kalusniak, S.; Püschel, S.; Tanaka, H.; Xu, J.; Tang, J.; Kränkel, C.,Optics Express;(2025), 6799-6807
Diode-pumped Sm:YLF laser at 605 nm and 648 nm.Kaneda, Y.; Tanaka, H.; Temyanko, V.,Optics Express;(2025), 8903-8910
Continuous-wave and Q-switched Tb:YLF lasers at 587 nm.Kotov, L.; Kaneda, Y.; Püschel, S.; Tanaka, H.; Hair, J.; Nehrir, A.; Temyanko, V.,Optics Express;(2025), 3950-3956
The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method.Kruszewski, P.; Fiedler, A.; Galazka, Z.,Applied Physics Letters;(2025), 062110
Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage.Michler, S.; Hamdaoui, Y.; Thapa, S.; Schwalb, G.; Besendörfer, S.; Ziouche, K.; Albrecht, M.; Brunner, F.; Medjdoub, F.; Meissner, E.,Physica Status Solidi a-Applications and Materials Science;(2025),
Single-crystal thermoelastic behavior of magnetoplumbite-type (Mg,Zr):SrGa12O19 and Pr:SrAl12O19 between 103 and 1573 K.Münchhalfen, M.; Schreuer, J.; Rhode, C.; Guguschev, C.,Aip Advances;(2025), 025120
High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3.Rindert, V.; Galazka, Z.; Schubert, M.; Darakchieva, V.,Applied Physics Letters;(2025), 082105
All-solid-state continuous-wave mode-locked Er:Lu2O3 laser at 3 μ m.Su, C. Y.; Liang, Y. Y.; Nie, H. K.; Zhang, B. T.; Zhang, J.; Liu, J.; Li, T.; Kränkel, C.,Optics and Laser Technology;(2025), 111787
On the Czochralski growth of SixGe1-x crystals as substrates for strained Ge quantum well heterostructures.Subramanian, A. N.; Richter, C.; Gybin, A.; Kabukcuoglu, M. P.; Hamann, E.; Zuber, M.; Oezkent, M.; Guguschev, C.; Juda, U.; Schroeder, T.; Abrosimov, N. V.; Sumathi, R. R.; Gradwohl, K. P.,Journal of Applied Physics;(2025), 065704
Ultra-thin epitaxial orthorhombic ferroelectric Hf0.97Y0.03O2 films on La2/ 3Sr1/3MnO3/SrTiO3 substrate with different orientations.Wang, Q.; Meng, H. Y.; Guo, Y. X.; Wang, Y. K.; Dai, L. Y.; Zhao, J. Y.; Zhao, L. B.; Jiang, Z. D.; Schwarzkopf, J.; Wu, S. L.; Liu, L. F.; Wang, C. M.; Wang, Z. M.; Chu, F.; Wang, Y.; Ren, W.; Niu, G.,Journal of Crystal Growth;(2025), 128043
All-solid-state continuous-wave mode-locked Er:Lu2O3 laser at 3 μ m.Su, C. Y.; Liang, Y. Y.; Nie, H. K.; Zhang, B. T.; Zhang, J.; Liu, J.; Li, T.:Kränkel, C.,Optics and Laser Technology;(2025), 111787
Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film.Chou, T. S.; Rehm, J.; Bin Anooz, S.; Wouters, C.; Ernst, O.; Akhtar, A.; Galazka, Z.; Albrecht, M.; Fiedler, A.:Popp, A.,Applied Physics Letters;(2025), 022101
Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures.Tröger, J.; Kersting, R.; Hagenhoff, B.; Bougeard, D.; Abrosimov, N. V.; Klos, J.; Schreiber, L. R.:Bracht, H.,Journal of Applied Physics;(2025), 025301
Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga2O3 Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices.Chou, T. S.; Tran, T. T. V.; Peelaers, H.; Tetzner, K.; Hilt, O.; Rehm, J.; Bin Anooz, S.; Fiedler, A.; Galazka, Z.; Albrecht, M.:Popp, A.,Advanced Electronic Materials;(2025), 2400342
Programmable Activation of Quantum Emitters in High-Purity Silicon with Focused Carbon Ion Beams.Hollenbach, M.; Klingner, N.; Mazarov, P.; Pilz, W.; Nadzeyka, A.; Mayer, F.; Abrosimov, N. V.; Bischoff, L.; Hlawacek, G.; Helm, M.:Astakhov, G. V.,Advanced Quantum Technologies;(2025),
Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method.Galazka, Z.; Fiedler, A.; Popp, A.; Seyidov, P.; Anooz, S. B.; Blukis, R.; Rehm, J.; Tetzner, K.; Pietsch, M.; Dittmar, A.; Ganschow, S.; Akhtar, A.; Remmele, T.; Albrecht, M.; Schulz, T.; Chou, T. S.; Kwasniewski, A.; Suendermann, M.; Schroeder, T.:Bickermann, M.,Advanced Materials Interfaces;(2025),
Investigations of free electrons in doped silicon crystals derived from Fourier transformed infrared measurements and ab initio calculations.Andriyevsky, B.; Bychto, L.; Patryn, A.; Schade, U.; Puskar, L.; Veber, A.; Abrosimov, N.; Kashuba, A. I.,Opto-Electronics Review;(2025), e153756
Energy Relaxation and Dynamics in the Correlated Metal Sr2RuO4 via Terahertz Two-Dimensional Coherent Spectroscopy.Barbalas, D.; Romero, R., III; Chaudhuri, D.; Mahmood, F.; Nair, H. P.; Schreiber, N. J.; Schlom, D. G.; Shen, K. M.; Armitage, N. P.,Physical Review Letters;(2025), 036501