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Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film.Chou, T. S.; Rehm, J.; Bin Anooz, S.; Wouters, C.; Ernst, O.; Akhtar, A.; Galazka, Z.; Albrecht, M.; Fiedler, A.; Popp, A.,Applied Physics Letters;(2025), 022101
Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga2O3 Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices.Chou, T. S.; Tran, T. T. V.; Peelaers, H.; Tetzner, K.; Hilt, O.; Rehm, J.; Bin Anooz, S.; Fiedler, A.; Galazka, Z.; Albrecht, M.; Popp, A.,Advanced Electronic Materials;(2025), 2400342
Evolution of the Electrical Conductivity of LiNb1-xTaxO3 Solid Solutions across the Ferroelectric Phase Transformation.El Azzouzi, F. E.; Klimm, D.; Kapp, A.; Verhoff, L. M.; Schäfer, N. A.; Ganschow, S.; Becker, K. D.; Sanna, S.; Fritze, H.,Physica Status Solidi a-Applications and Materials Science;(2025), 2300966
A High-Temperature Optical Spectroscopy Study of the Fundamental Absorption Edge in the LiNbO3-LiTaO3 Solid Solution.Gaczynski, P.; Suhak, Y.; Ganschow, S.; Sanna, S.; Fritze, H.; Becker, K. D.,Physica Status Solidi a-Applications and Materials Science;(2025),
Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method.Galazka, Z.; Fiedler, A.; Popp, A.; Seyidov, P.; Anooz, S. B.; Blukis, R.; Rehm, J.; Tetzner, K.; Pietsch, M.; Dittmar, A.; Ganschow, S.; Akhtar, A.; Remmele, T.; Albrecht, M.; Schulz, T.; Chou, T. S.; Kwasniewski, A.; Suendermann, M.; Schroeder, T.; Bickermann, M.,Advanced Materials Interfaces;(2025),
Symmetry-Based Phenomenological Model for Magnon Transport in a Multiferroic.Harris, I. A.; Husain, S.; Meisenheimer, P.; Ramesh, M.; Park, H. W.; Caretta, L.; Schlom, D. G.; Yao, Z.; Martin, L. W.; iñiguez-González, J.; Kim, S. K.; Ramesh, R.,Physical Review Letters;(2025), 016703
Programmable Activation of Quantum Emitters in High-Purity Silicon with Focused Carbon Ion Beams.Hollenbach, M.; Klingner, N.; Mazarov, P.; Pilz, W.; Nadzeyka, A.; Mayer, F.; Abrosimov, N. V.; Bischoff, L.; Hlawacek, G.; Helm, M.; Astakhov, G. V.,Advanced Quantum Technologies;(2025),
544-nm Tb3+-doped LiYF4 laser pumped by 488-nm InGaN laser diodes and high peak power operation with cavity-dumped Q-switching.Kannari, F.; Ishikawa, T.; Tanaka, H.; Shioya, Y.; Yasuhara, R.,Applied Optics;(2025), 83-90
Oxygen Diffusion in Li(Nb,Ta)O3 Single Crystals.Kofahl, C.; Uhlendorf, J.; Muscutt, B. A.; Pionteck, M. N.; Sanna, S.; Fritze, H.; Ganschow, S.; Schmidt, H.,Physica Status Solidi a-Applications and Materials Science;(2025),
Ferroelectric Hysteresis Measurement in the Lithium Niobate-Lithium Tantalate Single-Crystalline Family: Prospects for Lithium Niobate-Tantalate.Koppitz, B.; Ganschow, S.; Rüsing, M.; Eng, L. M.,Physica Status Solidi a-Applications and Materials Science;(2025),
Corroborating the magnetic easy axis of epitaxial (100) α-iron and (0001) BaFe12O19 thin films by 57Fe Mössbauer spectroscopy.Li, Y. E.; Shine, J.; Guguschev, C.; Brützam, M.; Schlom, D. G.; Ravi, N.,Aip Advances;(2025), 015323
Development and morphological analysis of the zone refining process for high purity germanium.Palleti, P. C.; Gybin, A.; Bergmann, S.; Juda, U.; Albrecht, M.; Sumathi, R. R.,Materials Science in Semiconductor Processing;(2025), 108924
Adsorption pathways of boron on clay and their implications for boron cycling on land and in the ocean.Ring, S. J.; Henehan, M. J.; Blukis, R.; von Blanckenburg, F.,Geochimica Et Cosmochimica Acta;(2025), 74-83
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals.Seyidov, P.; Varley, J. B.; Frodason, Y. K.; Klimm, D.; Vines, L.; Galazka, Z.; Chou, T. S.; Popp, A.; Irmscher, K.; Fiedler, A.,Advanced Electronic Materials;(2025), 2300428
Growth, structure, spectroscopic, and laser properties of Ho-doped yttrium gallium garnet crystal.Slimi, S.; Yu, H. H.; Zhang, H. J.; Kränkel, C.; Loiko, P.; Solé, R. M.; Aguiló, M.; Díaz, F.; Chen, W. D.; Griebner, U.; Petrov, V.; Mateos, X.,Optics Express;(2025), 2529-2541
Growth of Boron-Doped Germanium Single Crystals by the Czochralski Method.Subramanian, A. N.; Kabukcuoglu, M. P.; Richter, C.; Juda, U.; Kernke, R.; Bärwolf, F.; Hamann, E.; Zuber, M.; Abrosimov, N. V.; Sumathi, R. R.,Crystal Growth & Design;(2025), 1075-1081
Influence of Li-Stoichiometry on Electrical and Acoustic Properties and Temperature Stability of Li(Nb,Ta)O3 Solid Solutions up to 900 °C.Tichy-Rács, É.; Hurskyy, S.; Yakhnevych, U.; Gaczynski, P.; Ganschow, S.; Fritze, H.; Suhak, Y.,Physica Status Solidi a-Applications and Materials Science;(2025),
Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures.Tröger, J.; Kersting, R.; Hagenhoff, B.; Bougeard, D.; Abrosimov, N. V.; Klos, J.; Schreiber, L. R.; Bracht, H.,Journal of Applied Physics;(2025), 025301
Acoustic Loss in LiNb1-xTaxO3 at Temperatures up to 900 °C.Yakhnevych, U.; Sargsyan, V.; El Azzouzi, F.; Kapp, A.; Bernhardt, F.; Suhak, Y.; Ganschow, S.; Schmidt, H.; Sanna, S.; Fritze, H.,Physica Status Solidi a-Applications and Materials Science;(2025),
544-nm Tb3+-doped LiYF4 laser pumped by 488-nm InGaN laser diodes and high peak power operation with cavity-dumped Q-switching.Kannari, F.; Ishikawa, T.; Tanaka, H.; Shioya, Y.:Yasuhara, R.,Applied Optics;(2025), 83-90