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Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceC. Corley-Wiciak, C. Richter, M. H. Zoellner, I. Zaitsev, C. L. Manganelli, E. Zatterin, T. U. Schülli, A. A. Corley-Wiciak, J. Katzer, F. Reichmann, W. M. Klesse, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Virgilio and G. CapelliniAcs Applied Materials & Interfaces(2), (2023) 3119-3130
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device applicationT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, M. Pietsch, J. Rehm, T. T. V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler and A. PoppApplied Physics Letters(5), (2023)
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2023) 2200204
Thermally activated increase of the average grain size as the origin of resistivity enhancement inNbO2 films grown by pulsed-laser depositionN. Jaber, J. Feldl, J. Stoever, K. Irmscher, M. Albrecht, M. Ramsteiner and J. SchwarzkopfPhysical Review Materials(1), (2023)
Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK.-P. Gradwohl, C.-H. Lu, Y. Liu, C. Richter, T. Boeck, J. Martin, M. AlbrechtPhys. Status Solidi RRL (2022) 2200398
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2022) 2200204
Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquidA. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, N. V. Abrosimov; R. K. Zhukavin, V. N. Shastin Mater. Sci. Eng. B 286 (2022) 115979
Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics applicationJ. Rehm, T.-S. Chou, S. Bin Anooz, P. Seyidov, A. Fiedler, Z. Galazka, A. Popp Appl. Phys. Lett. 121 (2022) 240503
Step pinning and hillock formation in (Al,Ga)N films on native AlN substratesT. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht J. Appl. Phys. 132 (2022) 223102
Thermal Activation of Valley-Orbit States of Neutral Magnesium in SiliconR.J.S. Abraham, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltSemiconductors 56 1 (2022) 59-62
Laser cooling in Yb:KY3F10: a comparison with Yb:YLFS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Express 30 (2022) 47235-47248
Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiationV.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, S.B. Lastovskii, G.A. Oganesyan, D.S. Poloskin, A.A. Aref’evPhysics of the Solid State 12 (2022) 1878
Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal growth F. Burkle, M. Forste, K. Dadzis, I. Tsiapkinis, O. Patzold, A. Charitos, M. Dues, J. Czarske, L. Buttner, Flow Meas. Instrum. 88 (2022) 102258
Smart Design of Cz-Ge Crystal Growth Furnace and ProcessN. Dropka, X. Tang, G. K. Chappa, M. HolenaCrystals 12 (2022) 1764
Epitaxial growth of the first two members of the Ban+1InnO2.5 n+1 Ruddlesden–Popper homologous seriesF. V. E. Hensling, M. A. Smeaton, V. Show, K. Azizie, M. R. Barone, L. F. Kourkoutis, D. G. SchlomJ. Vac. Sci. Technol. A 40 (2022) 062707
Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theoryP. Seyidov, J. B. Varley, Z. Galazka, T.-S. Chou, A. Popp, A. Fiedler, K. IrmscherAPL Mater. 10 (2022) 111109
Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect I. Gamov, J. L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M. R. Wagner, M. Bickermann Phys. Rev. B 106 (2022) 184110
Low temperature thermoluminescence of β-Ga2O3 scintillatorM. E. Witkowski, K. J. Drozdowski, M. Makowski, W. Drozdowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. GalazkaOptical Materials: X 16 (2022) 100210
Coherent control of electron spin qubits in silicon using a global fieldE. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt5, A. Laucht, A. S. Dzurak, J. J. Planpj Quantum Information 8 (2022) 126
Combination of ultrafast time-resolved spectroscopy techniques for the analysis of electron dynamics of heliumlike impurity centers in siliconN. Dessmann, S. G. Pavlov, A. Pohl, V. B. Shuman, L. M. Portsel , A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, B. Redlich, H.-W. HübersPHYSICAL REVIEW B 106 (2022) 195205