Publications

PublicationJournalDate
High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer sourceM. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. HübersAppl. Phys. Lett. 114, 092103 (2019);03-2019
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsM. wienold, Pavlov, S. G.; Abrosimov, N. V.; Huebers, H. -W.Appl. Phys. Lett. 114, 092103 (2019)03-2019
Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin filmsJ. Boy, M. Handwerg, R.Ahrling , R. Mitdank, G. Wagner, Z. Galazka, S. F. FischerAPL Mater. 7, 022526 (2019)02-2019
The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M.KiesslingJournal of Crystal Growth 507 (2019) 299–30602-2019
ß-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert SchewskiRadiation Measurements 121 (2019) 49–5302-2019
Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2W.-C. Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, and Louis F. J. PiperJournal of Applied Physics 125, 082539 (2019)02-2019
Characterization of 30 76Ge enriched Broad Energy Ge detectors for GERDA Phase IIM. Agostini, A. M. Bakalyarov, E. Andreotti, M. Balata, I. Barabanov, L. Baudis, N. Barros, C. Bauer, E. Bellotti, S. Belogurov, G. Benato, A. Bettini, L. Bezrukov, T. Bode, D. Borowicz, V. Brudanin, R. Brugnera, D. Budjáš, A. Caldwell, C. Cattadori, A. Chernogorov, V. D’Andrea, E. V. Demidova, N. Di Marco, A. Domula, E. Doroshkevich, V. Egorov, R. Falkenstein, K. Freund, A. Gangapshev, A. Garfagnini, C. Gooch, P. Grabmayr, V. Gurentsov, K. Gusev, J. Hakenmüller, A. Hegai, M. Heisel, S. Hemmer, R. Hiller, W. Hofmann, M. Hult, L. V. Inzhechik, J. Janicskó Csáthy, J. Jochum, M. Junker, V. Kazalov, Y. Kermaïdic, T. Kihm, I. V. Kirpichnikov, A. Kirsch, A. Kish, A. Klimenko, R. Kneißl, K. T. Knöpfle, O. Kochetov, V. N. Kornoukhov, V. V. Kuzminov, M. Laubenstein, A. Lazzaro, B. Lehnert, Y. Liao, M. Lindner, I. Lippi, A. Lubashevskiy, B. Lubsandorzhiev, G. Lutter, C. Macolino, B. Majorovits, W. Maneschg, G. Marissens, M. Miloradovic, R. Mingazheva, M. Misiaszek, P. Moseev, I. Nemchenok, K. Panas, L. Pandola, K. Pelczar, A. Pullia, C. Ransom, S. Riboldi, N. Rumyantseva, C. Sada, F. Salamida, M. Salathe, C. Schmitt, B. Schneider, S. Schönert, A.-K. Schütz, O. Schulz, B. Schwingenheuer, O. Selivanenko, E. Shevchik, M. Shirchenko, H. Simgen, A. Smolnikov, L. Stanco, L. Vanhoefer, A. A. Vasenko, A. Veresnikova, K. von Sturm, V. Wagner, A. Wegmann, T. Wester, C. Wiesinger, M. Wojcik, E. Yanovich, I. Zhitnikov, S. V. Zhukov, D. Zinatulina, A. J. Zsigmond, K. Zuber, G. Zuzel European Physical Journal C (2019), Bd. 79, Article 97801-2019
Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga2O3 Grown by MOVPES. Bin Anooz, A. Popp, R. Grüneberg, A. Fiedler, K. Irmscher, R.Schewski, M. Albrecht, Z.Galazka, G. Wagner2019 Compound Semiconductor Week (CSW)01-2019
Thermal analysis and crystal growth of doped Nb2O5J.Hidde, Christo Guguscheva, Detlef Klimma,Journal of Crystal Growth 509 (2019) 60–6501-2019
Investigation of the Nd2O3-Lu2O3-Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3T. Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen GanschowJournal of Crystal Growth 505 (2019) 38–4301-2019
Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlNA. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. BickermannJ. Crystal Growth, 505 (2018) 69-7301-2019
The electronic structure of epsilon-Ga2O3M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. FornariAPL Materials 7, 022522 (2019);01-2019
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopyG. Niu, P. Calka, P. Huang, S. Sharath, S. Petzold, A.Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M. Schubert, F. Bärwolf, W. Ren, Z. -G. Ye, E. Perez, C. Wenger, L. Alff and T. SchroederMaterials Research Letters Volume 7, 2019 - Issue 3, Pages 117-12301-2019
Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in SiliconS. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. HübersPhys. Status Solidi B 2019, 256, 180051401-2019
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter ExcitationR. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. ShastinSemiconductors volume 53, pages1255–1257(2019)01-2019
β-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, R. SchewskiRadiation Measurements 121 (2019) 49–5312-2018
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge1V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. OganesyanaSemiconductors , 52 (2018) 1677-168512-2018
Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shiftM. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, R. GoldhahnAPL Materials 7, 022508 (2019);12-2018
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystalsZ. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, M. BickermannAPL Materials 7, 022512 (2019)12-2018
Tri-carbon defects in carbon doped GaNK. Irmscher, I. Gamov , E. Nowak , G. Gärtner, F. Zimmermann, F. C. Beyer, E. Richter, M. Weyers, G. TränkleAppl. Phys. Lett. 113, 262101 (2018);12-2018