Leibniz-Institut für Kristallzüchtung

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Reciprocal space slicing: A time-efficient approach to femtosecond x-ray diffractionS.P. Zeuschner, M. Mattern, J.-E. Pudell, A. von Reppert, M. Rössle, W. Leitenberger, J. Schwarzkopf, J.E. Boschker, M. Herzog, M. BargheerStructural Dynamics, 8, (2021), 014302

Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single CrystalsK. Böttcher, W. Miller, and S. GanschowCrystal, 56, (2021), 2000106

A new concept for temporal gating of synchrotron X-ray pulsesD. Schmidt, R. Bauer, S. Chung, D. Novikov, M. Sander, J.-E. Pudell, M. Herzog, D. Pfuetzenreuter, J. Schwarzkopf, R. Chernikov and P. GaalJ. Synchrotron Rad., 28, (2021), 375-382

Kerr-lens mode-locked Tm solid state laser with spectral broadening effectM. Tokurakawa，A. Suzuki, and C. KränkelRev. Las. Eng. 49, (2021), 385-389

Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone methodH. J. Rost, I.Buchovska, K.Dadzis, U.Juda, M.Renner, R.MenzelJournal of Crystal Growth 552 (2020) 125842

Temperature Dependence of Three-Dimensional Domain Wall Arrangement in Ferroelectric K^0.9Na^0.1NbO³ Epitaxial Thin FilmsM. Schmidbauer, L. Bogula, B. Wang, M. Hanke, L. von Helden, A. Ladera, J.-J. Wang, L.-Q. Chen, and J. SchwarzkopfJ. Appl. Phys. 128, (2020), 184101

Ferroelectric phase transitions in multi-domain K_0.9Na_0.1NbO₃ epitaxial thin filmsL. Bogula, Leonard von Helden, Carsten Richter, Michael Hanke, Jutta Schwarzkopf and Martin SchmidbauerNano Futures 4 (2020) 035005

Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single CrystalsK. Böttcher, Wolfram Miller, Steffen GanschowCryst. Res. Technol. 56 (2020) 2000106

Thermoelastic anisotropy in NdScO₃ and NdGaO3 perovskitesC. Hirschle, J. Schreuer, S. Ganschow, L. PetersMaterials Chemistry and Physics 254 (2020) 123528

UV-pumped visible Tb³⁺-lasersS. Kalusniak, H. Tanaka, E. Castellano-Hernandez, AND C. KrankelOptics Letters 45 (22) (2020) 6170-6173

Raman scattering in heavily donor doped β- Ga₂O₃A. Fiedler, M. Ramsteiner, Z. Galazka, and K. IrmscherAppl. Phys. Lett. 117 (2020) 152107

Higher-order Zeeman effect of Mg-related donor complexes in siliconS. G. Pavlov, D. L. Kamenskyi, Yu. A. Astrov, V. B. Shuman, L. М. Portsel, A. N. Lodygin, N. V. Abrosimov, H. Engelkamp, A. Marchese, and H.-W. HübersPHYSICAL REVIEW B 102 (2020) 115205

Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning PhotoluminescenceI. Buchovska, Anke Lüdge, Wolfgang Lüdge, and Frank M. KiesslingECS Journal of Solid State Science and Technology 9 (2020) 086001

Extraction of Classification Rules from Sequences of Crystal Growth DataR. Busa, Y. Dauxais, S. Ecklebe, N. Dropka, M. HolenaProceedings of the 20th Conference Information Technologies - Applications and Theory - ITAT 2020, Oravská Lesná, Slovakia,18-22 sept 2020, p.99-105

Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic ²⁸Si_1-x⁷²Ge_x AlloysA. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, and N. V. AbrosimovSemiconductors, 54 (9) (2020) 1123–1126

In-plane growth of germanium nanowires on nanostructured Si(001)/SiO₂ substratesF. Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 4 (2020) 035006

Brillouin zone center phonon modes in ZnGa₂O₄M. Stokey, Rafał Korlacki, Sean Knight, Matthew Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, and Mathias SchubertAppl. Phys. Lett. 117 (2020) 052104

Transition-metal-doped saturable absorbers for passive Q-switching of visible lasersH. Tanaka, Christian Kränkel, and Fumihiko KannariOptical Materials Express 10 (8) (2020) 1827-1842

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:BiR. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov,N. V. Abrosimov, H. Riemann, H.-W. Hübers, and V.N. ShastinSemiconductors, 54(8) (2020) 969–974

Suitability of binary oxides for molecularbeam epitaxy source materials: A comprehensive thermodynamic analysisK.-M. Adkinson, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrel C. Schlom, and Zi-Kui LiuAPL Materials 8, 081110 (2020)

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