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Zero-field optical magnetic resonance study of phosphorus donors in 28-siliconK. J. Morse, P. Dluhy, J. Huber, J. Z. Salvail, K. Saeedi, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. ThewaltPhysical Review B, 97 (2018) 115205
Simulation of grain evolution in solidification of silicon on meso-scopic scaleX. Qi, Lijun Liu, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Wolfram MillerComputational Materials Science, Volume 159, March 2019, Pages 432-439
Short lifetime components in the relaxation of boron acceptors in silicon K. Saeedi, N. Stavrias, B. Redlich, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, B. N. Murdin Phys. Rev. B 97, 125205
Growth of Bulk GaN from Gas phaseD. Siche, R. ZwierzCRYSTAL Research & Technology, 53 (2018) 1700224 1-15
Widely tunable, efficient 2 μm laser inmonocrystalline Tm3+:SrF2A. Scottile, E. Damiano, M. Rabe, R. Bertram, D. Klimm, M. TonelliJournal of Crystal Growth, 483 (2018) 121-124
Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 µmN. K. Stevenson, C. T. A. Brown, J. M. Hopkins, M. D. Dawson, C. Kränkel, and A. A. LagatskyOptics Letters, 43 (2018) 1287-1290
Advanced crystal growth techniques for thallium bromide semiconductor radiation detectorsA. Datta, Piotr Becla, Christo Guguschev, Shariar MotakefJournal of Crystal Growth 483 (2018) 211–215
Divacancy-tin related defects in irradiated germanium L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann Journal of Applied Physics 123, 161595 (2018)
Crystal growth and scintillation performance of Cs2HfCl6  and Cs2HfCl4Br2. Journal of Crystal Growth, under review. S. Lam, C. Guguschev, A. Burger, M. Hackett, S. MotakefJournal of Crystal Growth, 483 (2018) 121-124
Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cellsM. Schmid, B. Heidmann, F. Ringleb, K. Eylers, O. Ernst, S. Andree, J. Bonse, T. Boeck, J. KrügerOptics Letters, 43 (2018) 4791-4794
Thermodynamic investigations on the growth of CuAlO2 delafossite crystalsN. Wolff, D. Klimm, D. SicheAppl. Phys. Lett, 113 (2018) 052901
Defect-induced Stress Imaging in Single and Multi-crystalline semiconductor MaterialsM. Herms, Matthias Wagner, Stefan Kayser, Frank M. Kießling, Anna Poklad, Ming Zhaod, Ulrich KretzereMaterials Today: Proceedings 5 (2018) 14748–14756
Highly-efficient and compact Tm3+:RE2O3 (RE = Y, Lu, Sc) sesquioxide lasers based on thermal guidingP. Loiko, P. Koopmann, X. Mateos, J. M. Serres, V. Jambunathan, M. Aguiló, U. Griebner, V. Petrov, and C. KränkelIEEE Journal of Selected Topcis in Quantum Electronics, 24 (2018) 1600713
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wellsL. Lymperakis, T. Schulz, C. Freysoldt,1 M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, and J. NeugebauerPHYSICAL REVIEW MATERIALS 2, 011601(R) (2018)
Sol-gel growth and characterization of In2O3 thin filmsS. A. Palomares-Sanchez, Bernard E. Wattsa, Detlef Klimmb, Andrea Baraldic,Antonella Parisinic, Salvatore Vantaggioc, Roberto FornariaThin Solid Films 645 (2018) 383–390
Crystal growth, spectroscopy and laser performances of Pr3+:Sr0.7La0.3Mg0.3Al11.7O19 (Pr:ASL)S. Sattayaporn, P. Loiseau, G. Aka, D. T. Marzahl, C. KränkelOptics Express Vol. 26, Issue 2, pp. 1278-1289 (2018)
Lithium Metal Penetration Induced by Electrodeposition through Solid Electrolytes: Example in Single-Crystal Li6La3ZrTaO12 GarnetT. Swamy, R. Park, B. Sheldon, D. Rettenwander, L. Porz, S. Berendts,R. Uecker, C. Carter, Y.-M. ChiangJournal of The Electrochemical Society, 165 (16) A3648-A3655 (2018)
Low-Temperature Intracenter Relaxation Times of shallow donors in GermaniumKh. R. Zhukavin, K. A. Kovalevskii, S.M. Sergeev, Yu. Yu. Choporova, V.V. Gerasimov, V.V. Tsyplenkova, B.A Knyazv, N. V. Abrosimov, S. G. Pavlov, N. Shastina, H. Schneidberg, N. Deßmanne, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H.-W. HüberseJETP Letters, 2017, Vol. 106, No. 9, pp. 571–575