Luminescent properties of GaAsBi/GaAs double quantum well heterostructuresY. I. Mazur, V.G. Dorogana, L. Diasa, D. Fanc, M. Schmidbauer, M.E. Warea, Z. Ya. Zhuchenkoe, S. S. Kurlove, G. G. Tarasove, S.-Q. Yuc, G. E. marques, G. J. SalamoaJournal of Luminescence 188 (2017) 209–21606-2017
Deep carrier traps in as grown isotopically pure 28Si FZ crystalT. Mchedlidze, J. Weber, N. V. Abrosimov, H. RiemannActa Mater.,140 (2017) 411 - 41606-2017
Design of model experiments for melt flow and solidification in a square container under time-dependent mmagnetic fieldsD. Meier, G. Lukina, N. Thieme, P. Bönisch, K. Dadzisc, L. Büttnerb, O. Pätzolda, J. Czarskeb, M. StelteraJournal of Crystal Growth 461 (2017) 30–3706-2017
Crystal diameter stabilization during growth of Si from agranulate crucibleR. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemannin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 22006-2017
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxyA. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, K. IrmscherJournal of Applied Physics, 122 (2017) 165701/1 - 165701/705-2017
Aluminium-26 grain boundary diffusion in pure and Y-doped polycrystalline a-aluminaP. Fielitz, K. Kelm, R. Bertram, A. H. Chokshi, G. BorchardtActa Mater. 127 (2017) 302 - 31105-2017
Thermal stability of ε-Ga2O3 polymorphR. Fornari, M. Pavesi, V. Montedoro, D. Klimm, F. Mezzadri, I. Cora, B. Pécz, F. Boschi, A. Parisini, A. Baraldi, C. Ferrari, E. Gombia, M. BosiActa Mater. 140 (2017) 411 - 41605-2017
Scaling-Up of Bulk ß-Ga2O3 Single Crystals by the Czochralski MethodZ. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. BickermannECS J Solid State SCI Techn. 6 (2017) Q3007 - Q301105-2017
Melt growth and properties of bulk BaSnO3 single crystalsZ. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. BickermannJ. Phys.: Condens. Matter, " 29 (2017) 075701 "05-2017
Peak-power scaling of femtosecond Yb:Lu2O3 thin-disk lasersI. J. Graumann, A. Diebold, C. G. E. Alfieri, F. Emaury, B. Deppe, M. Golling, D. Bauer, D. Sutter, C. Kränkel, C. J. Saraceno, C. R. Phillips, and U. KellerOptics Express Vol. 25, Issue 19, pp. 22519-22536 (2017)05-2017
β-Ga2O3 MOSFETs for Radio Frequency OperationA. J. Green, K. D. Chabak, M. Baldini, N. Moser, R.Gilbert, R. C. Fitch, G. Wagner, Z. Galazka, J. McCandless, A. Crespo, K. Leedy, G. H. JessenIEEE Electron Device Letters, Vol.38 (2017) 790 - 79305-2017
Czochralski growth and characterization of cerium doped calcium scandateCh. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram and M. Bickermann CrystEngComm, 2017,19, 2553-256005-2017
Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicityCh. Guguschev, Dirk J. Kok, Uta Juda, Reinhard Uecker, Sakari Sintonen, Zbigniew Galazka, Matthias BickermannJournal of Crystal Growth 468 (2017) 305–31005-2017
Local growth of CuInSe2 micro solar cells for concentrator applicationB. Heidmann, Franziska Ringleb, Katharina Eylers, Sergiu Levcenco, Jörn Bonse, StefanAndree, JörgKrüger, Thomas Unold, Torsten Boeck, Martha Ch.Lux-Steiner, MartinaSchmidMaterialstoday Energy, Volume 6, December 2017, Pages 238-24705-2017
Growth of crystalline phase change materials by physical deposition methodsJos. E. Boschker, Raffaella CalarcoAdvances in Physics:. X , Volume 2, 2017- issue 3, Pages 675-694 05-2017
Computational Simulations of the Lateral-Photovoltage-Scanning-MethodS. Kayser, A. Lüdge, K. BöttcherVIII International Scientific Colloquium Modelling for Materials Processing Riga, September 21 - 22, 201705-2017
Dynamics of non-equilibrium charge carriers in p-germanium doped by galliumN. Deßmann, S. G. Pavlov, V. V. Tsyplenkov, E. E. Orlova, A. Pohl, V. N. Shastin, R. Kh. Zhukavin, S. Winner, M. Mittendorff, J. M. Klopf, N. V. Abrosimov, H. Schneider, H.-W. HübersPhys. Status Solidi B 254 (2017) 160080304-2017
TMF optimization in VGF crystal growth of GaAs by artificial neural networks and Gaussian process modelsN. Dropka, M. Holena, Ch. Frank-Rotschin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 203 - 20804-2017
Growth of Silicon on Reorganized Porous Silicon substrates by steady-state solution growth for Photovoltaic ApplicationsC. Ehlers, R. Bansen, D. Uebel, T. Teubner, T. Boeck33rd European Photovoltaic Solar Energy Conference and Exhibition04-2017