Crystal growth and characterization of the pyrochlore Tb2Ti2O7D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. BickermannCrystEngComm 19 (2017) 3908 - 391406-2017
Thermodynamic and Kinetic Aspects of Crystal Growth D. Klimm, in: Handbook of Solid State Chemistry06-2017
Effect of Irradiation with 15-MeV Protons on the Compensation of Ge〈(Sb) ConductivityV. V. Kozlovski, A. E. Vasil’ev, V. V. Emtsev, G. A. Oganesyan, N. V. AbrosimovJournal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 11 (2017) 601 - 60506-2017
Oxygen Vacancies in Fast Lithium-Ion Conducting GarnetsM. Kubicek, A. Wachter-Welzl, D. Rettenwander, R. Wagner, G. Amthauer, H. Hutter, J. FleigChem. Mater., (2017) 7189-719606-2017
Extreme ultraviolet light source at megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillatorF. Labaye, M. Gaponenko, V. J. Wittwer, A. Diebold, C. Paradis, N. Modsching, L. Merceron, F. Emaury, I. J. Graumann, C. R. Phillips, C. J. Saraceno, C. Kränkel, U. Keller, and T. SüdmeyerOptics Letters Vol. 42, Issue 24, pp. 5170-5173 (2017)06-2017
Activation energies of the InSi-Sii, defect transitions obtained by carrier lifetime measurementsK. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. AbrosimovPhys. Status Solidi C 14 (2017) 160003306-2017
MOVPE growth of violet GaN LEDs on ß-Ga2O3 substratesD. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, G. TränkleJournal of Crystal Growth, 478 (2017) 212 - 21506-2017
Luminescent properties of GaAsBi/GaAs double quantum well heterostructuresY. I. Mazur, V.G. Dorogana, L. Diasa, D. Fanc, M. Schmidbauer, M.E. Warea, Z. Ya. Zhuchenkoe, S. S. Kurlove, G. G. Tarasove, S.-Q. Yuc, G. E. marques, G. J. SalamoaJournal of Luminescence 188 (2017) 209–21606-2017
Deep carrier traps in as grown isotopically pure 28Si FZ crystalT. Mchedlidze, J. Weber, N. V. Abrosimov, H. RiemannActa Mater.,140 (2017) 411 - 41606-2017
Design of model experiments for melt flow and solidification in a square container under time-dependent mmagnetic fieldsD. Meier, G. Lukina, N. Thieme, P. Bönisch, K. Dadzisc, L. Büttnerb, O. Pätzolda, J. Czarskeb, M. StelteraJournal of Crystal Growth 461 (2017) 30–3706-2017
Crystal diameter stabilization during growth of Si from agranulate crucibleR. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemannin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 22006-2017
Polarization of the Induced THz Emission of Donors in SiliconK. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin Semiconduct 50 (2016) 1673 - 167706-2017
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxyA. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, K. IrmscherJournal of Applied Physics, 122 (2017) 165701/1 - 165701/705-2017
Aluminium-26 grain boundary diffusion in pure and Y-doped polycrystalline a-aluminaP. Fielitz, K. Kelm, R. Bertram, A. H. Chokshi, G. BorchardtActa Mater. 127 (2017) 302 - 31105-2017
Thermal stability of ε-Ga2O3 polymorphR. Fornari, M. Pavesi, V. Montedoro, D. Klimm, F. Mezzadri, I. Cora, B. Pécz, F. Boschi, A. Parisini, A. Baraldi, C. Ferrari, E. Gombia, M. BosiActa Mater. 140 (2017) 411 - 41605-2017
Scaling-Up of Bulk ß-Ga2O3 Single Crystals by the Czochralski MethodZ. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. BickermannECS J Solid State SCI Techn. 6 (2017) Q3007 - Q301105-2017
Melt growth and properties of bulk BaSnO3 single crystalsZ. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. BickermannJ. Phys.: Condens. Matter, " 29 (2017) 075701 "05-2017
Peak-power scaling of femtosecond Yb:Lu2O3 thin-disk lasersI. J. Graumann, A. Diebold, C. G. E. Alfieri, F. Emaury, B. Deppe, M. Golling, D. Bauer, D. Sutter, C. Kränkel, C. J. Saraceno, C. R. Phillips, and U. KellerOptics Express Vol. 25, Issue 19, pp. 22519-22536 (2017)05-2017
β-Ga2O3 MOSFETs for Radio Frequency OperationA. J. Green, K. D. Chabak, M. Baldini, N. Moser, R.Gilbert, R. C. Fitch, G. Wagner, Z. Galazka, J. McCandless, A. Crespo, K. Leedy, G. H. JessenIEEE Electron Device Letters, Vol.38 (2017) 790 - 79305-2017
Czochralski growth and characterization of cerium doped calcium scandateCh. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram and M. Bickermann CrystEngComm, 2017,19, 2553-256005-2017