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Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium IngotsA. Subramanian, N. Abrosimov, A. Gybin, C. Guguschev, U. Juda, A. Fiedler, F. Baerwolf, I. Costina, A. Kwasniewski, A. Dittmar, and R. R. SumathiJournal of Electronic Materials 52 (8), 5178-5188 (2023)
Development of Large-Diameter and Very High Purity Ge Crystal Growth Technology for DevicesR. R. Sumathi, A. Gybin, K. P. Gradwohl, P. C. Palleti, M. Pietsch, K. Irmscher, N. Dropka, and U. JudaCrystal Research and Technology (2023)
Enhancement-mode vertical (100) beta-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm-1K. Tetzner, M. Klupsch, A. Popp, S. Bin Anooz, T. S. Chou, Z. Galazka, K. Ickert, M. Matalla, R. S. Unger, E. B. Treidel, M. Wolf, A. Trampert, J. Wurfl, and O. HiltJapanese Journal of Applied Physics 62 (SF) (2023)
Ge-ion implantation and activation in (100) beta-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealingK. Tetzner, A. Thies, P. Seyidov, T. S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Pnopp, J. Wurfl, and O. HiltJournal of Vacuum Science & Technology A 41 (4) (2023)
Stimulated-emission cross-sections of trivalent erbium ions in the cubic sesquioxides Y2O3, Lu2O3, and Sc2O3A. Uvarova, P. Loiko, S. Kalusniak, E. Dunina, L. Fomicheva, A. Kornienko, S. Balabanov, A. Braud, P. Camy, and C. KrankelOptical Materials Express 13 (5), 1385-1400 (2023)
Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. K. Wang, W. C. Fang, L. Y. Jiang, Y. Y. Liu, R. B. Wang, L. Y. Dai, J. Y. Zhao, J. S. Bi, Z. H. Liu, L. B. Zhao, Z. D. Jiang, Z. T. Song, J. Schwarzkopf, T. Schroeder, S. L. Wu, Z. G. Ye, W. Ren, S. N. Song, and G. NiuAdvanced Functional Materials 33 (19) (2023)
Recrystallization of MBE-Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition FurnaceR. B. Wang, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters 17 (5) (2023)
Y-Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters (2023)
Charge transport and acoustic loss in lithium niobate-lithium tantalate solid solutions at temperatures up to 900 degrees CU. Yakhnevych, C. Kofahl, S. Hurskyy, S. Ganschow, Y. Suhak, H. Schmidt, and H. FritzeSolid State Ionics 392 (2023)
Thermal Activation of Valley-Orbit States of Neutral Magnesium in SiliconR.J.S. Abraham, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltSemiconductors 56 1 (2022) 59-62
Laser cooling in Yb:KY3F10: a comparison with Yb:YLFS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Express 30 (2022) 47235-47248
Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiationV.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, S.B. Lastovskii, G.A. Oganesyan, D.S. Poloskin, A.A. Aref’evPhysics of the Solid State 12 (2022) 1878
Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal growth F. Burkle, M. Forste, K. Dadzis, I. Tsiapkinis, O. Patzold, A. Charitos, M. Dues, J. Czarske, L. Buttner, Flow Meas. Instrum. 88 (2022) 102258
Smart Design of Cz-Ge Crystal Growth Furnace and ProcessN. Dropka, X. Tang, G. K. Chappa, M. HolenaCrystals 12 (2022) 1764
Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK.-P. Gradwohl, C.-H. Lu, Y. Liu, C. Richter, T. Boeck, J. Martin, M. AlbrechtPhys. Status Solidi RRL (2022) 2200398
The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 KD. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. BickermannCryst. Res. Technol. 58 (2022) 2200204
Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquidA. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, N. V. Abrosimov; R. K. Zhukavin, V. N. Shastin Mater. Sci. Eng. B 286 (2022) 115979
Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics applicationJ. Rehm, T.-S. Chou, S. Bin Anooz, P. Seyidov, A. Fiedler, Z. Galazka, A. Popp Appl. Phys. Lett. 121 (2022) 240503
Step pinning and hillock formation in (Al,Ga)N films on native AlN substratesT. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht J. Appl. Phys. 132 (2022) 223102
Coherent control of electron spin qubits in silicon using a global fieldE. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt5, A. Laucht, A. S. Dzurak, J. J. Planpj Quantum Information 8 (2022) 126