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GaAs solar cells grown on intentionally contaminated GaAs substratesJ. Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner, Aaron J. PtakJournal of Crystal Growth 541 (2020) 125668
Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growthO. C. Ernst, F. Lange, Th. Teubner, T. BoeckBeilstein J. Nanotechnol. 11 (2020) 1371–1380
Output characteristics of Pr:YAlO2 and Pr:YAG lasers pumped by high-power GaN laser diodesS. Fujita, Hiroki Tanaka, AND Fumihiko KannariApplied Optics 59 (17) (2020) 5124-5130
TiSr antisite: An abundant point defect in SrTiO3A. Karjalainen, Vera Prozheeva, Ilja Makkonen , Christo Guguschev, Toni Markurt, Matthias Bickermann , and Filip TuomistoJournal of Applied Physics 127 (2020) 245702
Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopyI. Levine, I. Gamov, M. Rusu, K. Irmscher, C. Merschjann, E. Richter, M. Weyers, and Th. DittrichPhysical Review, B 101 (2020) 245205
The Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State BatteriesM. Philipp, Bernhard Gadermaier, Patrick Posch, Ilie Hanzu, Steffen Ganschow, Martin Meven, Daniel Rettenwander, Günther J. Redhammer, and H. Martin R. WilkeningAdv. Mater. Interfaces 7(16) (2020) 2000450
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPES. Bin Anooz, R. Grüneberg, C. Wouters , R. Schewski , M. Albrecht , A. Fiedler , K. Irmscher , Z. Galazka , W. Miller , G. Wagner, J. Schwarzkopf , and A. PoppAppl. Phys. Lett. 116 (2020) 182106
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystalsJ. Boy, Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka , and Saskia F. FischerAIP Advances 10 (2020) 055005
Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defectsI. Gamov, E. Richter, M. Weyers, G. Gärtner, and K. IrmscherJ. Appl. Phys. 127 (2020) 205701
Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4Y. Jang, Seongyun Hong, Jihoon Seo, Hyeongmin Cho, Kookrin Char , and Zbigniew GalazkaAppl. Phys. Lett. 116 (2020) 202104
Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular SuperlatticesZ. Li, Xiuying Zhang, Xiaoxu Zhao, Jing Li, Tun Seng Herng, Haomin Xu, Fanrong Lin, Pin Lyu, Xinnan Peng, Wei Yu, Xiao Hai, Cheng Chen, Huimin Yang, Jens Martin, Jing Lu, Xin Luo, A. H. Castro Neto, Stephen J. Pennycook, Jun Ding, Yuanping Feng, and Jiong LuAdvanced Materials 32 (2020) 1907645
Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown filmsJ. Stoever, Jos E. Boschker , Saud Bin Anooz , Martin Schmidbauer , Peter Petrik , Jutta Schwarzkopf , Martin Albrecht , and Klaus IrmscherAppl. Phys. Lett. 116 (2020) 182103
Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGeT. Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets , Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Łukasz Cywiński , Dominique Bougeard Lars R. Schreiber npj Quantum Information 6, (2020) 40
MHz-repetition rate fs-laser-inscribed crystalline waveguide lasers inscribed at 100 mm/sK. Hasse, Christian Kränkel Optics Express 28(8) (2020) 12011
Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric FieldsE. Langenberg, Hanjong Paik, Eva H. Smith, Hari P. Nair, Isabelle Hanke, Steffen Ganschow, Gustau Catalan, Neus Domingo, and Darrell G. SchlomACS Appl. Mater. Interfaces 12 (2020) 20691–20703
Investigation of the Magnesium Impurity in SiliconL. M. Portsel, V. B. Shuman, A. A. Lavrent’ev, A. N. Lodygin, N. V. Abrosimov, and Yu. A. AstrovSemiconductors 4 (2020)
Growth of heavily-doped Germanium single crystals for mid-Infrared applicationsR. Sumathi, Nikolay Abrosimov, Kevin-P. Gradwohl, Matthias Czupalla, Jörg FischerJournal of Crystal Growth 535 (2020) 125490
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphireN. Susilo, E.Ziffer, S.Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Rass, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, M. KneisslPhotonics Research 8 (2020) 589-594
High quality-factor Kerr-lens mode-locked Tm:Sc2O3 single crystal laser with anomalous spectral broadeningA. Suzuki, Christian Kränkel, and Masaki TokurakawaAppl. Phys. Express 13 (2020) 052007
Gate controlled valley polarizer in bilayer grapheneH. Chen, Pinjia Zhou, Jiawei Liu, Jiabin Qiao, Barbaros Oezyilmaz, Jens MartinNature Communications 11 (2020) 1202