The awarded work focuses on the structural, electrical, and optical properties of rutile GeO₂ single crystals and their great potential for applications in power electronics as well as deep-ultraviolet optoelectronics. Particularly noteworthy, this work demonstrates reliable n-type conductivity via Sb doping for the first time, an essential prerequisite for high-power electronic applications. In addition, GeO₂ exhibits a wide band gap and strong optical emission in the blue and green spectral range, which also gives it considerable potential for deep-ultraviolet optoelectronics. Overall, the study confirms rutile GeO₂ as a highly promising material for future electronic and optical applications.
We warmly congratulate the team led by Zbigniew Galazka on this success.
This publication is the result of a Leibniz project involving IKZ, PDI, and FBH, with contributions from the following authors: Zbigniew Galazka, Roberts Blukis, Andreas Fiedler, Saud Bin Anooz, Jijun Zhang, Martin Albrecht, Thilo Remmele, Tobias Schulz, Detlef Klimm, Mike Pietsch, Albert Kwasniewski, Andrea Dittmar, Steffen Ganschow, Uta Juda, Karoline Stolze, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann.
Publication: https://doi.org/10.1002/pssb.202400326
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Leibniz-Institut für Kristallzüchtung (IKZ)
Dr. Zbigniew Galazka
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