Epitaxy of semiconducting Gallium Oxide

Modern society relies on a wide range of electrical and electronic systems. To achieve this, the conversion of electrical energy must be carried out as efficient as possible. The material system β-Ga₂O₃ has due to its high bandgap of approx. 4.8 eV and the resulting theoretically high breakdown field strength the best prerequisites to become the high-performance material for next generation power applications. Therefore our mission is to achieve the predicted material properties through process development to pave β-Ga₂O₃ the way into power electronics.

The β-Ga₂O₃ MOVPE process development is focused on the investigation of the effects of the growth parameters and the type of doping on the electrical properties of the layers. Another focus is the homoepitaxial growth on differently oriented substrates and the influence on the generation of crystal defects. In addition, there are studies on increasing the growth rate by maintaining the good layer quality. In order to improve the positive properties of Ga₂O₃ even further the material is alloyed with Aluminum.

Offer: Gallium oxide substrates and epi-layers

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S. Bin Anooz, R. Grüneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf and A. Popp
Step flow growth of β-Ga₂O₃ thin films on vicinal (100) β-Ga₂O₃ substrates grown by MOVPE
Appl. Phys. Lett.116, 182106 (2020)
DOI: 10.1063/5.0005403

T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, J. Rehm, T.T.V. Tran, A. Fiedler, Z. Galazka, M. Albrecht, and A. Popp
High-mobility 4 μm MOVPE-grown (100) β-Ga₂O₃ film by parasitic particles suppression
Jpn. J. Appl. Phys. 62, SF1004 (2023). [Spotlight Article]
DOI: 10.35848/1347-4065/acb360

T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, M. Pietsch, J. Rehm, T.T.V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler, and A. Popp
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga₂O₃ films for vertical device application
Appl. Phys. Lett. 122, 052102 (2023).
DOI: 10.1063/5.0133589